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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS M r ftrtTin7 IVIPSZ9U7 FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND 4.7 MAX , COMPLEMENTARY CIRCUITRY. FEATURES: Û4 5 . High DC Current Gain Specified : -0.1— -500mA	OCR Scan	-500mA -50mA, 200MHz MPS2222. -10mA, -10mA -150mA 500mA -150mA,	PDF
TRANSISTOR 1f Abstract: 1F transistor 1F t transistor 1fTRANSISTOR Text: TD62M3701F TENTATIVE oLOW SATURATION VOLTAGE DRIVER FOR MOTOR Unit in mm 8.2 ± 0.2 TD62M3701F is Multi Chip IC incorporates R R R H H B R H 6 low saturation discrete transistors which equipped bias resistor and free-wheeling diode. This IC is suitable for a battery use motor	OCR Scan	TD62M3701F TD62M3701F SS0P16 RN5006) RN6006) TRANSISTOR 1f 1F transistor 1F t transistor 1fTRANSISTOR	PDF
MPS2907 toshiba Abstract: No abstract text available Text: M5E D • ID TT ES D DOIVBSR H IT0S4 TOSHIBA TRANSISTOR MPS2907 SILICON PNP EPITAXIAL TYPE PCT PROCESS T 2 cr< TOSHIBA (DISCRETE/OPTO) FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUITRY. FEATURES : . High DC Current Gain Specified : -0.1	OCR Scan	MPS2907 -50mA, 200MHz MPS2222. -500mA -10/tA, -10mA, VcE--10V, -10mA MPS2907 toshiba	PDF
2n2222 kec Abstract: 2222a KTN2222 KTN2222A transistor h pn 2222a Text: SEMICONDUCTOR TECHNICAL DATA KTN2222/A EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA Max. ; V ce-60V, V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.	OCR Scan	KTN2222/A 150mA, KTN2907/2907A. KTN2222/2222A 2N2222/2222A. KTN2222 KTN2222A 2n2222 kec 2222a KTN2222A transistor h pn 2222a	PDF