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    IC 22CF Search Results

    IC 22CF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC 22CF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


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    11-CQ2

    Abstract: 22CF
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


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    PDF FDMS3668S FDMS3668S 11-CQ2 22CF

    ic 22cf

    Abstract: No abstract text available
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


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    PDF FDMS3664S FDMS3664S ic 22cf

    FDMS3660S

    Abstract: MO-240 501B
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


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    PDF FDMS3660S FDMS3660S MO-240 501B

    Untitled

    Abstract: No abstract text available
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


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    PDF FDMS3664S FDMS3664S

    Untitled

    Abstract: No abstract text available
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


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    PDF

    fdms3660s

    Abstract: 501B 8 P
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


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    PDF FDMS3660S FDMS3660S 501B 8 P

    22CF21CD

    Abstract: 11-CQ2 22cF
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


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    PDF FDMS3668S FDMS3668S 22CF21CD 11-CQ2 22cF

    1201D

    Abstract: No abstract text available
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


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    PDF FDMS3664S FDMS3664S 1201D

    TCI6630K2L

    Abstract: TCI6630 PCIE11 cortex-a15 PCIe Endpoint FFFF00 lte baseband mbps SCR 3 phase mpu5 01D3
    Text: TCI6630K2L Multicore DSP+ARM KeyStone II System-on-Chip SoC Data Manual PRODUCT PREVIEW information applies to products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products


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    PDF TCI6630K2L SPRS893 TCI6630K2L SPRS893--May TCI663i TCI6630 PCIE11 cortex-a15 PCIe Endpoint FFFF00 lte baseband mbps SCR 3 phase mpu5 01D3

    sprugy7

    Abstract: pll 022a sprabh0 DDR3 jedec JESD79-3C lte turbo encoder 1GHz PRESCALER RF module that can used with TMS320C6670 "DDR3 SDRAM" 022d 744 312 011
    Text: TMS320C6670 Multicore Fixed and Floating-Point System-on-Chip Data Manual ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice. Literature Number: SPRS689


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    PDF TMS320C6670 SPRS689 SPRS689--November TMS320C6670 sprugy7 pll 022a sprabh0 DDR3 jedec JESD79-3C lte turbo encoder 1GHz PRESCALER RF module that can used with TMS320C6670 "DDR3 SDRAM" 022d 744 312 011

    Search Accelerator

    Abstract: No abstract text available
    Text: TMS320C6670 Multicore Fixed and Floating-Point System-on-Chip Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not


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    PDF TMS320C6670 SPRS689C TMS320C6670 SPRS689C--October Search Accelerator

    SML-LXR85SIC-TR

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT 3 .2 0 CO. 1 2 6 ] - REV. 2.60 co.ioe: i » El I CATHDDE PA R T N U M B E R REV. SM L-LX R 85S IC -T R B E.C.N. N U M B E R AN D R E V ISIO N C O M M EN TS A E.C.N. # 1 0 B R D R . & # 1 0 7 7 1 . 7 .30 .0 1 B E.C.N. # 1 1 2 4 8 . B .1 2 .0 5


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    PDF SML-LXR85SIC-TR 10BRDR. SML-LXR85SIC-TR

    TO-22CFN

    Abstract: No abstract text available
    Text: T ra n s is to rs T O -2 2 0 • T Q -2 2 0 F P • T O -2 2 0 F N • H R T TD-220FP is a TG-220 w ifi mo« aated fin tar e re« mounting ar>d righer PC. 2W. TO-22CfN is a kw profle by 2mm version c* TO-22CFP wfrcul fin support pin, for higher mounting density. HRT is a taped power transistor package fee uso with an automatic placement machine.


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    PDF O-220 O-220FP O-220FN O-220FP TG-220 O-22CFN O-22CFP TO-22CFN

    Untitled

    Abstract: No abstract text available
    Text: HSM101 THRU SEMICONDUCTOR HSM 106 TECHNICAL DATA FORWARD INTERNAHO'NAL ELECUD'H ICS LTD. TECHNICAL SPECIFICATIONS OF SURFACE MOUNT HIGH EFFICIENCY RECTIFIER VOLTA GE RANGE - 50 to 600 Volts CURREN T- 1.0 Ampere FEATURES * Idea fo r surface m ounted a pp lica tio n s


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    PDF HSM101 IL-STD-202E,

    d 7377

    Abstract: 7377 951K #7377 1N120 ta 7377 2X40 2N2225 22cF
    Text: MAZDA 7377 DOUBLE TÉTRODE D ’ÉMISSION AMPLIFICATEUR PUSH-PULL CLASSE C TRIPLEUR DE FRÉQUENCE JUSQU’A 1000 MHz 7377 Le e s t une d ouble té t ro d e d ’ é m is sio n à ch a u ffa g e i n d i r e c t . I l com porte des con n e xio n s c o u rt e s et p ré s e n t e des c a p a c it é s i n ­


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    PDF 3-951K d 7377 7377 951K #7377 1N120 ta 7377 2X40 2N2225 22cF

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


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    PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    2N7002DM

    Abstract: kia 1117 3.3 VT8233 g3mx SMD M05 sot23 H052 W044 kia 1117 1.8 C85C39 c8252
    Text: - p. <11 « P.02 Cover Page P. 29 DC-DC +1.25V P4 478 P.30 DC-DC +2.5V P. 31 Battery P. 32 Charger 1 of 2 P.03 P4 4 78 - PWR & GND (2 of 2) P.04 NB VT8703 - Host, CRT and TV Interface P.05 NB VT8703 - Memory Interface P.06 NB VT8703 - LVDS, (1 of 3) (2 of 3)


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    PDF P4M266 LTC17D9-9 N355V1 33VSB 2N7002DM kia 1117 3.3 VT8233 g3mx SMD M05 sot23 H052 W044 kia 1117 1.8 C85C39 c8252

    RIO R47

    Abstract: ic 22cf
    Text: | CHEMhCOWI « ¿ « I. f SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS / MVH •Endurance : 105°C 1000 to 2000 hours •Suitable to fit for downsized equipment •Solvent-proof type, see page16 i2 s r - MVL MVJ longer life ♦SPECIFICATIONS Characteristics


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    PDF page16 50Vdc 100pF 1000pF 120Hz RIO R47 ic 22cf

    LA4070

    Abstract: RM4A N2364 VA114 3005A 8S04
    Text: INO„ 2 3 6 4 = ^ m i $ - 3 r - 5147 X V LA4 U ffj& * «•Witg'fe fi*U f U - \ 7^ 3. - I CT L A 2 B 0 0 t ArRiHT 1SK •A^-7>7'I*I«6 V c C= 9 V , R | _ = 8 Q , P o = 0 . 5 W •5 ~J>U-¥ 2 C 1 out = 7 0 m A max) . • K ^ - f A 'r t B s ( 2 0 0 m A X ,


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    PDF I0P9/11 f10OH LA4070 LA4070 RM4A N2364 VA114 3005A 8S04

    Untitled

    Abstract: No abstract text available
    Text: leluom Semiconductor, Inc. TC1070 TC1071 TC1187 50mA, 100 mA, AND 150 mA ADJUSTABLE CMOS LDOs WITH SHUTDOWN FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC1070, TC1071, and TC1187 are adjustable LDOs designed to supersede a variety of older bipolar voltage regulators. Total supply current is typically 50 p.A at


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    PDF TC1070 TC1071 TC1187 TC1070, TC1071, TC1187 TC1070) TC1071) TC1187)

    AMD am2 socket pinout

    Abstract: amd AM2 pinout AMD socket AM2 pinout socket AM2 pinout pinout AM2 AMD AM27H010 50raW
    Text: ADV MICRO b4E D MEMORY • 02S752Ö 0032QÖ7 böü Bi A M D 1) ti Advanced Micro Devices Am27H010 1 Megabit (131,072 x 8-Bit) High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ 100% Flashrite programming — 45 ns — Typical programming time of 16 seconds


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    PDF Am27H010 28-pin 32-pin KS000010 12750D-9 Atn27H010 AMD am2 socket pinout amd AM2 pinout AMD socket AM2 pinout socket AM2 pinout pinout AM2 AMD 50raW