AT49BV32XT
Abstract: No abstract text available
Text: Features • 2.65V to 3.3V Read/Write • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • – Sixty-three 32K Word 64K Byte Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
|
Original
|
1494C
09/00/xM
AT49BV32XT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Features • 2.65V to 3.3V Read/Write • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • – Sixty-three 32K Word 64K Byte Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
|
Original
|
1494D
10/00/xM
|
PDF
|
MX29SL800C
Abstract: MX29SL800CT Q0-Q15 SA10
Text: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture
|
Original
|
MX29SL800C
16K-Byte
32K-Byte
64K-Byte
100mA
MX29SL800CT
Q0-Q15
SA10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture
|
Original
|
MX29SL800C
16K-Byte
32K-Byte
64K-Byte
100mA
su/17/2006
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture
|
Original
|
MX29SL800C
16K-Byte
32K-Byte
64K-Byte
100mA
|
PDF
|
"TE 555"
Abstract: No abstract text available
Text: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture
|
Original
|
MX29SL800C
16K-Byte
32K-Byte
64K-Byte
100mA
"TE 555"
|
PDF
|
MX29SL402C
Abstract: Q0-Q15
Text: MX29SL402C T/B 4M-BIT [512K x 8 / 256K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 524,288 x 8 / 262,144 x 16 switchable • Boot Sector Architecture
|
Original
|
MX29SL402C
16K-Byte
32K-Byte
64K-Byte
100mA
Q0-Q15
|
PDF
|
Am29BDD160GB64C
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
|
Original
|
Am29BDD160G
16-bit/512
32-Bit)
Am29BDD160GB64C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1 nppon7 I CHEIIhCOWl MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS LXY f:W ! : : " b i'iiiiA b iÜ ÏV : : i ' “ -V : : 'O S 'S V fm m iv ¥j¥:5: lower Z downsized •N ew ly innovative electrolyle and internal architecture are employed •Endurance with ripple current: 105“C 2000 to 8000 hours
|
OCR Scan
|
10to63Vrfc
10OOuF
10Vdo
63Vdc
120Hz)
16X20
16X25
16X30
16X35
16X40
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29LL800T/Am29LL800B AMDZ1 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically
|
OCR Scan
|
Am29LL800T/Am29LL800B
8-Bit/524
16-Bit)
48-pin
29LV200â
LL800â
Am29LL800T
|
PDF
|
80000h8
Abstract: No abstract text available
Text: P R E L IM IN A R Y Am29 LL800T/Am29 LL800B A M D tl 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically
|
OCR Scan
|
LL800T/Am29
LL800B
Am29LL800B
10000h,
20000h,
06000h.
30000h,
08000h.
40000h,
10OOOh.
80000h8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMDH Am29LV200T/Am29LV200B 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 3.0 Volt-only Sector Architecture Flash Mem ory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — Embedded Erase algorithms autom atically preprogram and erase the entire chip or any
|
OCR Scan
|
Am29LV200T/Am29LV200B
8-Bit/131
16-Bit)
29LV200T/A
29LV200B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: G ' S f * MINIATURE aluminum e le c tro ly tic cap a citors ' •N e w ly innovative electrolyte and internal architecture are employed •Low est impedance at high frequency range • Endurance with ripple current: 105°C 2000 to 8000 hours •Solvent-proof type
|
OCR Scan
|
63Vdc
120Hz)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY — Am29LV200T/Am29LV200B A M D tl 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ ■ — Extended voltage range: 2.7 to 3.6 volt read and
|
OCR Scan
|
Am29LV200T/Am29LV200B
8-Bit/131
16-Bit)
perform90R
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY A M D * Am29LL800T/Am29LL800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically
|
OCR Scan
|
Am29LL800T/Am29LL800B
8-Bit/524
16-Bit)
48-pin
10000h,
04000h.
06000h.
30000h,
08000h.
40000h,
|
PDF
|
29LL800
Abstract: L6BH
Text: P R E L IM IN A R Y Am29LL800T/Am29LL800B AMD£I 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically
|
OCR Scan
|
Am29LL800T/Am29LL800B
29LV200"
LL800"
Am29LL800T
29LL800
L6BH
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DENSE-PAC \í M I C K OS V S T 32 Megabit FLASH EEPROM DP5Z2ME16Pn3 M S PRELIMINARY DESCRIPTION: The D P 5 Z 2 M E 1 6 P n 3 "S L C C " devices are a revolutionary n e w m em ory subsystem using Dense-Pac M icrosystem s' ceram ic Stackable Lead less C hip
|
OCR Scan
|
DP5Z2ME16Pn3
200ns
|
PDF
|
29f800bb
Abstract: IC 555 architecture 29f800bb55 29F800BB-55
Text: AMD3 Am29F800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
|
OCR Scan
|
Am29F800B
8-Bit/512
16-Bit)
Am29F800
29f800bb
IC 555 architecture
29f800bb55
29F800BB-55
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AMDH Am29F200A 2 Megabit 256 K X S-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC standards
|
OCR Scan
|
Am29F200A
S-Bit/128
16-Bit)
44-pin
48-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AMD£I Am29LV200B 2 M egabit 256 K x 8-B it/I 28 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single pow er supply operation Em bedded A lgorithm s — 2.7 to 3.6 volt read and w rite operations for battery-powered applications
|
OCR Scan
|
Am29LV200B
16-Bit)
Am29LV200
Am29LV200BT-70
Am29LV200BB-70
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AMD il PRELIM IN ARY Am29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations
|
OCR Scan
|
Am29SL800C
8-Bit/512
16-Bit)
29SL800B
FBB048:
29SL800C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMD£I AmMCOXXA 2, 4, or 8 Megabyte 5.0 Volt-only Flash Miniature Card DISTINCTIVE CHARACTERISTICS • 2, 4, or 8 Mbytes of addressable Flash memory ■ 5.0 Volt-only, single power supply operation ■ Available in industrial temperature grade
|
OCR Scan
|
60-pad
100h10Bh.
|
PDF
|
29F800B
Abstract: 29f800bb 29F800BT 29f800ba m29f800bb M29F800BT
Text: AMDH Am29F800BT/Am29F800BB 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 5.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Single pow er supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
|
OCR Scan
|
Am29F800BT/Am29F800BB
8-Bit/512
16-Bit)
29F800
29F800B
29f800bb
29F800BT
29f800ba
m29f800bb
M29F800BT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AM DH 5.0 Am29F200B V- o nl y 2 Megabit 256 K X 8-BK/128 K X 16-Blt CMOS 5.0 Volt-only, Boot Sector Flash Memory Flas DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
|
OCR Scan
|
Am29F200B
8-BK/128
16-Blt)
Am29F200A
20-year
|
PDF
|
