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    IC GAL16V8 Search Results

    IC GAL16V8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004 Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd

    IC GAL16V8 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ULC EPM5128

    Abstract: 85C090 EP1200 epm5130 XC3020 PAL18P8 PLS163 XC2018 PLHS153 PLS100
    Text: Tem ic S e m i c o n d u c t o r s Universal Logic Circuits * Technology TEM IC Field Programmable Devices Supported Semiconductors uses advanced sub- (*) micron CM OS technology in its ULC devices. The n-transistor channel lengths are sized at 0.8 microns


    OCR Scan     		GAL16V8 PAL16P8 PAL18P8 PAAAL16L8 PAL10L8 PAL14L4 PAL16L2 PAL16RP8 PAL16RP4 PAL16R8 ULC EPM5128 85C090 EP1200 epm5130 XC3020 PLS163 XC2018 PLHS153 PLS100 PDF

    Untitled

    Abstract: No abstract text available
    Text: L A T T IC E s e m ic o n d u c t o r LifiE D 530^4^ lattice Q 0030D Ö OT7 G A L 1 6 V 8 /8 8 3 High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 10 ns Maximum Propagation Delay


    OCR Scan     		0030D GAL16V8B-10) 100ms) AL16V8B-15LD/883 5962-8983903RA 20-Pin AL16V8B-15LR/883 962-89839032A 6V8A-20LD/883 PDF

    6V8A

    Abstract: 16v8a GALI6V8B GAL16V8A-15LR tg 5361 5962-8983902RA 5304 smd 8 pin 5962-8983904RA 5962-8983903RA
    Text: L A T T IC E S E M I C O N D U C T O R 5 3 ô b T 4 T GGOEGTfi 1 « L A T 47E D Lattice GAL16V8B/883 GAL16V8A/883 T -w é -n -o i FEATURES High Performance E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM • HIGH PERFO RM ANCE E*CMOS* TECHNOLOGY — 10 ns Maximum Propagation Delay


    OCR Scan     		GAL16V8B/883 6V8A/883 GAL16V8B) 100ms) Fl83906RA 20-Pin 6V8A-20QR/883 962-89839062A 6V8A-20LD/883 6V8A 16v8a GALI6V8B GAL16V8A-15LR tg 5361 5962-8983902RA 5304 smd 8 pin 5962-8983904RA 5962-8983903RA PDF

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


    OCR Scan     		ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541 PDF

    sine wave generator using ic 555

    Abstract: siemens relais V23162 siemens relais V23162-B0422-b110 sine wave generator technic LP03 LP05 DLP05 132051
    Text: ICs for Communications Signal Processing Subscriber Line Interface Codec Filter SLICOFI PEB 3065 High Voltage Subscriber Line IC HV-SLIC PEB 4065 Line Testing with SLICOFI/HV-SLIC Application Note 1997-07-01 DS 1 PEB 3065/PEB 4065 Revision History: Current Version: 1997-07-01


    Original     		3065/PEB T23A230 sine wave generator using ic 555 siemens relais V23162 siemens relais V23162-B0422-b110 sine wave generator technic LP03 LP05 DLP05 132051 PDF

    LEAPER-3

    Abstract: 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver
    Text: COMPANY PROFILE 1 Leap Electronic was established in 1980 located in Taipei Taiwan. With great experienced employees, Leap has dedicated on test equipment and provided a whole and perfect environment of development. Additional, the Company has been qualified by major IC manufacturer such as ATMEL, AMD, MICROCHIP, WINBOND,etc.


    Original     		PIC16C52/54/54A PIC16C55/56/57/57A/58A PIC12C508/509 PIC16C61 PIC16C620/621/622 PIC16C71/710 PIC16C62/63/64/65 PICC16C72/73/74/74A PIC16C83/84 PIC17C42/42A/43/44 LEAPER-3 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 PDF

    Untitled

    Abstract: No abstract text available
    Text: Lattice' GAL16VP8 High-Speed E2CMOS PLD Generic Array Logic I ; ; ; S e m ic o n d u c to r I • ■ ■ C o rp o ra tio n Functional Block Diagram Features HIGH DRIVE E2CMOS GAL® DEVICE — TTL Compatible 64 mA Output Drive — 15 ns Maximum Propagation Delay


    OCR Scan     		GAL16VP8 Tested/100% PDF

    Untitled

    Abstract: No abstract text available
    Text: ATF16V8B Features • • • 1 In d u stry S tandard A rc h ite c tu re E m ulates Many 20-Pin PALs Low C ost Easy-to-U se S oftw are T o ols H igh Speed E le c tric a lly E rasable P rogram m able Lo g ic D evices 7.5 ns M axim um P in-to-P in Delay Several Pow er Saving O ptio ns


    OCR Scan     		ATF16V8B 20-Pin ATF16V8BQ ATF16V8BQL ATF16V8BQ-10JC ATF16V8BQ-1OPC ATF16V8BQ-10SC ATF16V8BQL-15JC ATF16V8BQL-15PC PDF

    gal16v8a

    Abstract: gal16v8b PAL gal16v8b GAL16V8A-10LP
    Text: Lattice GAL16V8B GALI 6V8A High Performance E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E’ CMOS» TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 100 MHz — 5 ns M aximum from C lock Input to Data O utput — TTL Com patible 24 m A O utputs


    OCR Scan     		GAL16V8B) 100ms) 20-pln GAL16V8B-10LPI GAL16V8B-10LJI GAL16V8B-15LPI GAL16V8B-15LJI GAL16V8A-15LPI GAL16V8A-15LJI GAL16V8A-20QPI gal16v8a gal16v8b PAL gal16v8b GAL16V8A-10LP PDF

    Untitled

    Abstract: No abstract text available
    Text: GAL16V8B GAL16V8A Lattice High Performance E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E*CMOS* TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 100 MHz — 5 ns Maximum from Clock Input to Data Output — TTL Compatible 24 mA Outputs


    OCR Scan     		GAL16V8B GAL16V8A GAL16V8B) 100ms) PDF

    GAL16V8QS

    Abstract: 928 6v8a opal VD 5028 GAL programming Guide T0,8N gal16v8qs15lvc GAL16V8QS-10L gal programming algorithm AC021
    Text: Semiconductor GAL16V8QS-10L, -15L 20-Pin 0.8 jli EECM OS PLD s General Description Features Th e EECM OS G AL16V8Q S devices are fabricated using N ational’s CS80BEV 0.8|u. E lectrically Erasable C M O S pro­ cess. This advanced process m akes N ational’s


    OCR Scan     		GAL16V8QS-10L, 20-Pin GAL16V8QS CS80BEV Cep-01451, 928 6v8a opal VD 5028 GAL programming Guide T0,8N gal16v8qs15lvc GAL16V8QS-10L gal programming algorithm AC021 PDF

    GAL16V8QS15

    Abstract: 16V8QS GAL16V8QS SH 2104 20-PIN ic ir 2112 pin layout 527S49 gal programming specification opal GAL 16 v 8 D DIP
    Text: Semiconductor GAL16V8QS-10L, -15L 20-Pin 0.8jli EECMOS PLDs General Description Features Th e EECM OS G AL16V8Q S devices are fabricated using N ational’s CS80BEV 0.8|u. E lectrically Erasable C M O S pro­ cess. This advanced process m akes N ational’s


    OCR Scan     		GAL16V8QS-10L, 20-Pin GAL16V8QS CS80BEV Cep-01451, GAL16V8QS15 16V8QS SH 2104 ic ir 2112 pin layout 527S49 gal programming specification opal GAL 16 v 8 D DIP PDF

    similar ic book

    Abstract: No abstract text available
    Text: LATTICE SE MICONDUCTOR böE D Bi SBÖbTHT ÜGG5753 S5T « L A T Lattice G A L16V8Z G A L16V8ZD Zero Power E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM FEATURES • ZERO POWER E’ CMOS TECHNOLOGY — 100|iA Standby Current — Input Transition Detection on GAL16V8Z


    OCR Scan     		GG5753 L16V8Z L16V8ZD GAL16V8Z GAL16V8ZD 10MHz) similar ic book PDF

    IC GAL 16V8B-15

    Abstract: GAL16V8 16V8B-15 GAL16V8B-15QP IC gal16v8 GAL16V8C-7LJI GAL16V8B-10LP GAL16V8B-15LP GAL16V8B-15QJ GAL16V8B-7LP
    Text: NiLattice GAL16V8 High Performance E2CMOS PLD Generic Array Logic FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 5 ns Maximum Propagation Delay — Fmax = 1 6 6 MHz — 4 ns Maximum from Clock input to Data Output — UltraMOS® Advanced CMOS Technology


    OCR Scan     		GAL16V8 100ms) 20-pin 16V8B-15/25: IC GAL 16V8B-15 16V8B-15 GAL16V8B-15QP IC gal16v8 GAL16V8C-7LJI GAL16V8B-10LP GAL16V8B-15LP GAL16V8B-15QJ GAL16V8B-7LP PDF

    gal 16v8 programming algorithm

    Abstract: gal programming algorithm GAL programming Guide GAL16V8QS TAT 2159 opal 16V8A 16V8Q 16V8QS gal programming specification
    Text: Semiconductor GAL16V8QS-10L, -15L 20-Pin 0.8jli EEC M O S PLD s General Description Features Th e EECM OS G AL16V8Q S devices are fabricated using N ational’s CS80BEV 0.8|u. E lectrically Erasable C M O S pro­ cess. This advanced process m akes N ational’s


    OCR Scan     		GAL16V8QS-10L, 20-Pin GAL16V8QS CS80BEV Cep-01451, gal 16v8 programming algorithm gal programming algorithm GAL programming Guide TAT 2159 opal 16V8A 16V8Q 16V8QS gal programming specification PDF

    GAL16V80-25QJI

    Abstract: GAL16V80 AL16V8D-25QP 6v6C gal16v8
    Text: •■■ ■a ■ GAL16V8 ■ ■■ ■ ■■ ■ ■■ Z 2 2 2 2 Z S em iconductor High Performance E2CMOS PLD _ Generic Array Logic "C o rp o ratio n • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz


    OCR Scan     		GAL16V8 Tested/100% 100ms) GAL16V80-25QJI GAL16V80 AL16V8D-25QP 6v6C gal16v8 PDF

    16v8z

    Abstract: 16V8ZD
    Text: GAL16V8Z GAL16V8ZD I Semiconductor I Corporation Zero Power E2CMOS PLD l/CLK - > - ZERO POWER E2CMOS TECHNOLOGY — 100jjA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD — Input and Output Latching During Power Down


    OCR Scan     		GAL16V8Z GAL16V8ZD 100jjA GAL16V8ZD Tested/100% 100ms) 16v8z 16V8ZD PDF

    Untitled

    Abstract: No abstract text available
    Text: GAL16V8 Lattice' High Performance E2CMOS PLD Generic Array Logic ; Semiconductor I Corporation Functional Block Diagram Features HIGH PERFORMANCE E2CMOS TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 3.0 ns Maximum from Clock Input to Data Output


    OCR Scan     		GAL16V8 Tested/100% 100ms) PDF

    Untitled

    Abstract: No abstract text available
    Text: GAL16V8 Lattica High Performance E2CMOS PLD Generic Array Logic Semiconductor Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 3.0 ns Maximum from Clock Input to Data Output


    OCR Scan     		GAL16V8 Tested/100% 100ms) 16V8B-10: PDF

    Untitled

    Abstract: No abstract text available
    Text: GAL16V8/883 Lattice High Performance E2CMOS PLD Generic Array Logic . . . J Semiconductor •■ ■ ■ Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 100 MHz — 6 ns Maximum from Clock Input to Data Output


    OCR Scan     		GAL16V8/883 GAL16V8C-7 GAL16V8B-10) 100ms) -20LD 2-8983902R 20-Pin V8B-20LR PDF

    gal 16v8 programming algorithm

    Abstract: GAL16V8 application notes gal16v8 national National SEMICONDUCTOR GAL16V8 gal 16v8 programming specification GAL16V8-25 25L90 gal programming algorithm GAL16V8-25L 16L8* GAL
    Text: GAL16V8 National iCA Semiconductor GAL16V8 Generic Array Logic General Description Features The NSC E2CMOS GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology


    OCR Scan     		GAL16V8 GAL16V8 20-pin gal 16v8 programming algorithm GAL16V8 application notes gal16v8 national National SEMICONDUCTOR GAL16V8 gal 16v8 programming specification GAL16V8-25 25L90 gal programming algorithm GAL16V8-25L 16L8* GAL PDF

    Untitled

    Abstract: No abstract text available
    Text: GAL16V8Z GAL16V8ZD •ill a ttire :LdlllUC ■■■■■■ Corporation Zero Power E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM FEATURES • ZERO POWER E2CMOS TECHNOLOGY — 100|iA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD


    OCR Scan     		GAL16V GAL16V8Z GAL16V8ZD 100ms) 10MHz) PDF

    GAL16V8A

    Abstract: 14L4 L16V GAL16V8P gal16v8a national semiconductor
    Text: GAL16V8A Generic Array Logic General Description The N SC E 2C M O S GAL device combines a high per­ formance C M O S process with electrically erasable floating gate technology. This programmable memory technology applied to array logic provides designers with reconfigurable


    OCR Scan     		GAL16V8A GAL16V8A 20-pin 14L4 L16V GAL16V8P gal16v8a national semiconductor PDF