BS 4752 MCCB
Abstract: digitrip 310 time curve KEMA keur type 900 kema keur 60947-2 SWITCH KEMA keur t 85 12NES1200T Eaton DIGITRIP 3000 seltronic breaker Cutler-Hammer Digitrip RMS 310 rating plug EOP5T07
Text: Series G Molded Case Circuit Breakers 15 – 2500 Amperes for UL, CSA & IEC Applications July 2004 Frame Sizes EG through RG 15 – 2500 Amperes Vol. 1, Ref. No. [01] Description Page Standards Standards . . . . . . . . . . . . . . . . General Information . . . . . . . .
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PG01200002E
BS 4752 MCCB
digitrip 310 time curve
KEMA keur type 900
kema keur 60947-2 SWITCH
KEMA keur t 85
12NES1200T
Eaton DIGITRIP 3000
seltronic breaker
Cutler-Hammer Digitrip RMS 310 rating plug
EOP5T07
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LG direct drive motor
Abstract: IXBD4410 schematic diagram UPS active power 600 schematic diagram welding inverter control common schematic diagram welding inverter control MOTOR DRIVER IC LM 2003 ups with ferrite core transformer schematic diagram UPS inverter phase igbt desaturation driver schematic ixdp630
Text: IXBD4410 IXBD4411 ISOSMARTTM Half Bridge Driver Chipset Type Description IXBD4410PI IXBD4411PI Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-Side Driver 16-Pin P-DIP -40 to +85°C -40 to +85°C IXBD4410SI IXBD4411SI Full-Feature Low-Side Driver 16-Pin SO
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IXBD4410
IXBD4411
IXBD4410PI
IXBD4411PI
16-Pin
IXBD4410SI
IXBD4411SI
LG direct drive motor
IXBD4410
schematic diagram UPS active power 600
schematic diagram welding inverter control common
schematic diagram welding inverter control
MOTOR DRIVER IC LM 2003
ups with ferrite core transformer
schematic diagram UPS inverter phase
igbt desaturation driver schematic
ixdp630
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LG direct drive motor
Abstract: schematic diagram welding inverter control common IGBT desaturation schematic diagram welding inverter full bridge ixdp630 mosfet 4411 bi-directional switches IGBT driver IXBD4411 LG 631 IC 1N5817
Text: IXBD4410 IXBD4411 ISOSMARTTM Half Bridge Driver Chipset Type Description IXBD4410PI IXBD4411PI Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-Side Driver 16-Pin P-DIP -40 to +85°C -40 to +85°C IXBD4410SI IXBD4411SI Full-Feature Low-Side Driver 16-Pin SO
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IXBD4410
IXBD4411
IXBD4410PI
IXBD4411PI
16-Pin
IXBD4410SI
IXBD4411SI
LG direct drive motor
schematic diagram welding inverter control common
IGBT desaturation
schematic diagram welding inverter full bridge
ixdp630
mosfet 4411
bi-directional switches IGBT driver
IXBD4411
LG 631 IC
1N5817
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Untitled
Abstract: No abstract text available
Text: IXBD4410 IXBD4411 ISOSMARTTM Half Bridge Driver Chipset Type Description IXBD4410PI IXBD4411PI Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-Side Driver 16-Pin P-DIP -40 to +85°C -40 to +85°C IXBD4410SI IXBD4411SI Full-Feature Low-Side Driver 16-Pin SO
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IXBD4410
IXBD4411
IXBD4410PI
IXBD4411PI
16-Pin
IXBD4410SI
IXBD4411SI
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LG direct drive motor
Abstract: mosfet 4411 schematic diagram welding inverter control common schematic diagram welding inverter full bridge ic chip ic 4410 8 pin 4411 schematic diagram on line UPS driving mosfet/igbt with pulse transformer driver igbt transformer driver induction heating mosfet driver circuits
Text: IXBD4410 / IXBD4411 ISOSMARTTM Half Bridge Driver Chipset Type Description IXBD4410PI IXBD4411PI Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-Side Driver 16-Pin P-DIP -40 to +85°C -40 to +85°C IXBD4410SI IXBD4411SI Full-Feature Low-Side Driver 16-Pin SO
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IXBD4410
IXBD4411
IXBD4410PI
IXBD4411PI
16-Pin
IXBD4410SI
IXBD4411SI
LG direct drive motor
mosfet 4411
schematic diagram welding inverter control common
schematic diagram welding inverter full bridge
ic chip ic 4410
8 pin 4411
schematic diagram on line UPS
driving mosfet/igbt with pulse transformer driver
igbt transformer driver
induction heating mosfet driver circuits
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Untitled
Abstract: No abstract text available
Text: IXBD4410 IXBD4411 ISOSMARTTM Half Bridge Driver Chipset Type Description IXBD4410PI IXBD4411PI Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-Side Driver 16-Pin P-DIP -40 to +85°C -40 to +85°C IXBD4410SI IXBD4411SI Full-Feature Low-Side Driver 16-Pin SO
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IXBD4410
IXBD4411
IXBD4410PI
IXBD4411PI
16-Pin
IXBD4410SI
IXBD4411SI
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Untitled
Abstract: No abstract text available
Text: , ^ o ^ LG Semicon Co.,Ltd. Description The G M M 73640 00B S /S G is a 4M x 36 bits D ynam ic R A M M O D U LK w hich is assem bled 36 pieces o f 4M x lb it D R A M s in 20/26 pm SOJ package o n the printed circuit board. T his m odule can be as well used as 8M x 18 bits D ynam ic R A M
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GMM7364000BS/SG-60/70/80
7364000B
C3C3C3C3C30
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NJU6319
Abstract: NJU6319A NJU6319B NJU6319C NJU6319D NJU6319P NJU6319XC NJU6319XE NJU6319XR
Text: N JU 6 3 1 9 * > y - X I c Ift NJU6319VU-X" li, 50MHz £ T? 3g Jg W m m m j 'j f , fl- js s g a m ^ x T - M ' m & ?k H fill fflC-MOS x m ic t ¥ ?% r n z t it it o BSi iiffittf*eif-r?S6«Rri!iT*fcy, » { E«E4.3V*ti£fc U - o X NJU6319XC 1/23» j a t l ^ b » F o , Fo/2, Fo/4 S.t;Fo /8 |iJ*tt|*lg|5 !iig ig l c
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NJU6319*
NJU6319XC
NJU6319XE
NJU6319XR
50MHz
LSTTL10
NJU6319A
NJU6319B
NJU6319C
NJU6319D
NJU6319
NJU6319P
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2N3724
Abstract: 2N3725 2n3725a transistor 2N3725
Text: Datasheet Central' 2N3724 2N3725 2N3725A Semiconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 3 7 2 4 , 2 N 3 7 2 5 , 2 N 3 7 2 5 A types are Silicon NPN Planar Epitaxial Transistors
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2N3724
2N3725
2N3725A
2N3724,
2N3725,
2N3725A
2N3724
Dissipation00MHz
transistor 2N3725
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CM2894A
Abstract: No abstract text available
Text: Datasheet CM2894A w Q M h C I 1 S e m ic o n d u c t o r C o rp . PNP SILICON SWITCHING TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION
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cm2894a
to-18
CM2894A
100MHz
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TIP140
Abstract: TIP142 TIP146 TIP142 TIP147 TIP141 TIP145 TIP147 tip 147
Text: Datasheet H C o n tM l TIP140 TIP141 TIP142 NPN TIP145 TIP146 TIP147 PNP tm SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-218 CASE Manufacturers of World Class Discrete Semiconductors
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TIP140
TIP141
TIP142
TIP145
TIP146
O-218
TIP140,
TIP142 TIP147
TIP147
tip 147
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PN4356
Abstract: PN4355 PN4354
Text: Datasheet PN4354 PN4355 PN4356 Central K ilH l • Semiconductor Corp. PNP SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-92 CASE (EBC) Manufacturers of World Class Discrete Semiconductors
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PN4354
PN4355
PN4356
PN4354
PN4356
100/iA
100mA
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2N3798
Abstract: 2N3799
Text: Datasheet ^ ^ ^^ ^ _ ^^ • tm 2N3798 2N3799 WSem G iconductor I I I i II 1 Corp. PNP SILICON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE M anufacturers of W orld C lass Discrete S em iconductors
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2N3798
2N3799
2N3798,
2N3799
500jtiA
500jtiA,
30MHz
100MHz
100kHz
2N3798
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2N2221A
Abstract: 2N2222A NPN transistor 2n2221a 2n2222a central
Text: Data Sheet Central" 2N2221A 2N2222A S em ico n d u cto r Corp. NPN SILICON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION:
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2N2221A
2N2222A
2N2221A,
2N2222A
150mA,
NPN transistor 2n2221a
2n2222a central
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BSX45
Abstract: BSX46 BSX47
Text: Data Sheet H BSX45, -10, -16 BSX46, -10, -16 BSX47, -10, TM C od i 1i mt tru aV f lll V NPN SILICON TRANSISTORS S e m ic o n d u c to r C orp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors
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BSX45,
BSX46,
BSX47,
BSX45
200Hz
bsx46
bsx47
BSX46
BSX47
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2N3735
Abstract: 2N3734
Text: Datasheet _ ^ - M confNil — 2N3734 2N3735 Sem iconductor covp. NPN SILICON TRANSISTORS 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE M anufacturers of W orld C lass D iscrete S em iconductors
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2N3734
2N3735
2N3734,
2N3735
150mA,
500mA,
100mA
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2N2907
Abstract: 2n2907 TRANSISTOR PNP 2N2906 2N2907 TRANSISTOR 2N2907A 2N2907 a TRANSISTOR 2N2907 PNP Transistor LG 631 IC J 2N2906 transistor 2n2906
Text: Data Sheet 2N2906, A 2N2907, A C p n t r n 1 Sem iconductor Corp. PNP SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION
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2N2906,
2N2907,
2N2906
2N2907
2N2906A
2N2907A
2N2907
2n2907 TRANSISTOR PNP
2N2907 TRANSISTOR
2N2907A
2N2907 a TRANSISTOR
2N2907 PNP Transistor
LG 631 IC
J 2N2906
transistor 2n2906
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LG 631 IC
Abstract: 2N4405 ic lg 631 2N4404
Text: Datasheet Central' 2N4404 2N4405 Sem iconductor Corp. PNP SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 4 4 0 4 , 2N 4 4 0 5 types are PNP Silicon Epitaxial Planar Transistors designed
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2N4404
2N4405
2N4404,
2N4405
150mA
500mA
100MHz
500mA,
LG 631 IC
ic lg 631
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2N6057
Abstract: 2N6050 2N6051 2N6052 2N6058 2N6059
Text: Datasheet 2N6050, 2N6051, 2N6052 2N6057, 2N6058, 2N6059 Central PNP NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors
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2N6050,
2N6051,
2N6052
2N6057,
2N6058,
2N6059
2N6057
2N6050
2N6051
2N6058
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transistor 2sc 1014
Abstract: 5 R 107 2sc 1014
Text: M ic r o s e m i 140 Com merce Drive M ontgomery vil te, PA 18936-1013 Tel: 215 631-9840 TCC20L08 RF & MICROWAVE TRANSISTORS CLASS A MICROWAVE at • • ■ ■ ■ . FREQUENCY 2.0GHz POWER OUT .aw POWER GAIN S.OdB VOLTAGE 20.0V CURRENT 1?0mA CLASS A GOLD MET At. 1.IZEO DIE
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TCC20L08
TCC20L08
120mA
120mA
TCC201
transistor 2sc 1014
5 R 107
2sc 1014
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR 2SD1631 2 S D 1 631 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm MICRO MOTOR DRIVE, H A M M ER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. 7.1 MAX PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hjrg = 4000 (Min.)
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2SD1631
150mA)
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JU TOSHIBA
Abstract: No abstract text available
Text: T O SH IB A TOSHIBA TRANSISTOR 2SD1631 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 631 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. U nit in mm 7.1 MAX High DC C urrent Gain : h p g = 4000 (Min.)
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2SD1631
150mA)
JU TOSHIBA
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IBJT
Abstract: 2-7D101A 2SD1631
Text: TO SH IBA TOSHIBA TRANSISTOR 2SD1631 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 631 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 7.1 MAX 3.8 High DC Current Gain : hjrß = 4000 (Min.)
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2SD1631
150mA)
IBJT
2-7D101A
2SD1631
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BU724A
Abstract: No abstract text available
Text: i i N AMER PHILIPS/DISCRETE APX bbS3^31 002fl307 24? blE » BU724A y v SILICON DIFFUSED POWER TRANSISTORS M onolithic high-voltage npn Darlington transistors w ith integrated speed-up diode in a SOT82 envelope, intended fo r fast switching applications such as small m otor control and switch-mode power supplies
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002fl307
BU724A
bb53T31
D026311
BU724A
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