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    IC LG 631 Search Results

    IC LG 631 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC LG 631 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BS 4752 MCCB

    Abstract: digitrip 310 time curve KEMA keur type 900 kema keur 60947-2 SWITCH KEMA keur t 85 12NES1200T Eaton DIGITRIP 3000 seltronic breaker Cutler-Hammer Digitrip RMS 310 rating plug EOP5T07
    Text: Series G Molded Case Circuit Breakers 15 – 2500 Amperes for UL, CSA & IEC Applications July 2004 Frame Sizes EG through RG 15 – 2500 Amperes Vol. 1, Ref. No. [01] Description Page Standards Standards . . . . . . . . . . . . . . . . General Information . . . . . . . .


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    PDF PG01200002E BS 4752 MCCB digitrip 310 time curve KEMA keur type 900 kema keur 60947-2 SWITCH KEMA keur t 85 12NES1200T Eaton DIGITRIP 3000 seltronic breaker Cutler-Hammer Digitrip RMS 310 rating plug EOP5T07

    LG direct drive motor

    Abstract: IXBD4410 schematic diagram UPS active power 600 schematic diagram welding inverter control common schematic diagram welding inverter control MOTOR DRIVER IC LM 2003 ups with ferrite core transformer schematic diagram UPS inverter phase igbt desaturation driver schematic ixdp630
    Text: IXBD4410 IXBD4411 ISOSMARTTM Half Bridge Driver Chipset Type Description IXBD4410PI IXBD4411PI Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-Side Driver 16-Pin P-DIP -40 to +85°C -40 to +85°C IXBD4410SI IXBD4411SI Full-Feature Low-Side Driver 16-Pin SO


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    PDF IXBD4410 IXBD4411 IXBD4410PI IXBD4411PI 16-Pin IXBD4410SI IXBD4411SI LG direct drive motor IXBD4410 schematic diagram UPS active power 600 schematic diagram welding inverter control common schematic diagram welding inverter control MOTOR DRIVER IC LM 2003 ups with ferrite core transformer schematic diagram UPS inverter phase igbt desaturation driver schematic ixdp630

    LG direct drive motor

    Abstract: schematic diagram welding inverter control common IGBT desaturation schematic diagram welding inverter full bridge ixdp630 mosfet 4411 bi-directional switches IGBT driver IXBD4411 LG 631 IC 1N5817
    Text: IXBD4410 IXBD4411 ISOSMARTTM Half Bridge Driver Chipset Type Description IXBD4410PI IXBD4411PI Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-Side Driver 16-Pin P-DIP -40 to +85°C -40 to +85°C IXBD4410SI IXBD4411SI Full-Feature Low-Side Driver 16-Pin SO


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    PDF IXBD4410 IXBD4411 IXBD4410PI IXBD4411PI 16-Pin IXBD4410SI IXBD4411SI LG direct drive motor schematic diagram welding inverter control common IGBT desaturation schematic diagram welding inverter full bridge ixdp630 mosfet 4411 bi-directional switches IGBT driver IXBD4411 LG 631 IC 1N5817

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    Abstract: No abstract text available
    Text: IXBD4410 IXBD4411 ISOSMARTTM Half Bridge Driver Chipset Type Description IXBD4410PI IXBD4411PI Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-Side Driver 16-Pin P-DIP -40 to +85°C -40 to +85°C IXBD4410SI IXBD4411SI Full-Feature Low-Side Driver 16-Pin SO


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    PDF IXBD4410 IXBD4411 IXBD4410PI IXBD4411PI 16-Pin IXBD4410SI IXBD4411SI

    LG direct drive motor

    Abstract: mosfet 4411 schematic diagram welding inverter control common schematic diagram welding inverter full bridge ic chip ic 4410 8 pin 4411 schematic diagram on line UPS driving mosfet/igbt with pulse transformer driver igbt transformer driver induction heating mosfet driver circuits
    Text: IXBD4410 / IXBD4411 ISOSMARTTM Half Bridge Driver Chipset Type Description IXBD4410PI IXBD4411PI Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-Side Driver 16-Pin P-DIP -40 to +85°C -40 to +85°C IXBD4410SI IXBD4411SI Full-Feature Low-Side Driver 16-Pin SO


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    PDF IXBD4410 IXBD4411 IXBD4410PI IXBD4411PI 16-Pin IXBD4410SI IXBD4411SI LG direct drive motor mosfet 4411 schematic diagram welding inverter control common schematic diagram welding inverter full bridge ic chip ic 4410 8 pin 4411 schematic diagram on line UPS driving mosfet/igbt with pulse transformer driver igbt transformer driver induction heating mosfet driver circuits

    Untitled

    Abstract: No abstract text available
    Text: IXBD4410 IXBD4411 ISOSMARTTM Half Bridge Driver Chipset Type Description IXBD4410PI IXBD4411PI Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-Side Driver 16-Pin P-DIP -40 to +85°C -40 to +85°C IXBD4410SI IXBD4411SI Full-Feature Low-Side Driver 16-Pin SO


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    PDF IXBD4410 IXBD4411 IXBD4410PI IXBD4411PI 16-Pin IXBD4410SI IXBD4411SI

    Untitled

    Abstract: No abstract text available
    Text: , ^ o ^ LG Semicon Co.,Ltd. Description The G M M 73640 00B S /S G is a 4M x 36 bits D ynam ic R A M M O D U LK w hich is assem bled 36 pieces o f 4M x lb it D R A M s in 20/26 pm SOJ package o n the printed circuit board. T his m odule can be as well used as 8M x 18 bits D ynam ic R A M


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    PDF GMM7364000BS/SG-60/70/80 7364000B C3C3C3C3C30

    NJU6319

    Abstract: NJU6319A NJU6319B NJU6319C NJU6319D NJU6319P NJU6319XC NJU6319XE NJU6319XR
    Text: N JU 6 3 1 9 * > y - X I c Ift NJU6319VU-X" li, 50MHz £ T? 3g Jg W m m m j 'j f , fl- js s g a m ^ x T - M ' m & ?k H fill fflC-MOS x m ic t ¥ ?% r n z t it it o BSi iiffittf*eif-r?S6«Rri!iT*fcy, » { E«E4.3V*ti£fc U - o X NJU6319XC 1/23» j a t l ^ b » F o , Fo/2, Fo/4 S.t;Fo /8 |iJ*tt|*lg|5 !iig ig l c


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    PDF NJU6319* NJU6319XC NJU6319XE NJU6319XR 50MHz LSTTL10 NJU6319A NJU6319B NJU6319C NJU6319D NJU6319 NJU6319P

    2N3724

    Abstract: 2N3725 2n3725a transistor 2N3725
    Text: Datasheet Central' 2N3724 2N3725 2N3725A Semiconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 3 7 2 4 , 2 N 3 7 2 5 , 2 N 3 7 2 5 A types are Silicon NPN Planar Epitaxial Transistors


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    PDF 2N3724 2N3725 2N3725A 2N3724, 2N3725, 2N3725A 2N3724 Dissipation00MHz transistor 2N3725

    CM2894A

    Abstract: No abstract text available
    Text: Datasheet CM2894A w Q M h C I 1 S e m ic o n d u c t o r C o rp . PNP SILICON SWITCHING TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION


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    PDF cm2894a to-18 CM2894A 100MHz

    TIP140

    Abstract: TIP142 TIP146 TIP142 TIP147 TIP141 TIP145 TIP147 tip 147
    Text: Datasheet H C o n tM l TIP140 TIP141 TIP142 NPN TIP145 TIP146 TIP147 PNP tm SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-218 CASE Manufacturers of World Class Discrete Semiconductors


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    PDF TIP140 TIP141 TIP142 TIP145 TIP146 O-218 TIP140, TIP142 TIP147 TIP147 tip 147

    PN4356

    Abstract: PN4355 PN4354
    Text: Datasheet PN4354 PN4355 PN4356 Central K ilH l • Semiconductor Corp. PNP SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-92 CASE (EBC) Manufacturers of World Class Discrete Semiconductors


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    PDF PN4354 PN4355 PN4356 PN4354 PN4356 100/iA 100mA

    2N3798

    Abstract: 2N3799
    Text: Datasheet ^ ^ ^^ ^ _ ^^ • tm 2N3798 2N3799 WSem G iconductor I I I i II 1 Corp. PNP SILICON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE M anufacturers of W orld C lass Discrete S em iconductors


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    PDF 2N3798 2N3799 2N3798, 2N3799 500jtiA 500jtiA, 30MHz 100MHz 100kHz 2N3798

    2N2221A

    Abstract: 2N2222A NPN transistor 2n2221a 2n2222a central
    Text: Data Sheet Central" 2N2221A 2N2222A S em ico n d u cto r Corp. NPN SILICON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION:


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    PDF 2N2221A 2N2222A 2N2221A, 2N2222A 150mA, NPN transistor 2n2221a 2n2222a central

    BSX45

    Abstract: BSX46 BSX47
    Text: Data Sheet H BSX45, -10, -16 BSX46, -10, -16 BSX47, -10, TM C od i 1i mt tru aV f lll V NPN SILICON TRANSISTORS S e m ic o n d u c to r C orp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors


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    PDF BSX45, BSX46, BSX47, BSX45 200Hz bsx46 bsx47 BSX46 BSX47

    2N3735

    Abstract: 2N3734
    Text: Datasheet _ ^ - M confNil — 2N3734 2N3735 Sem iconductor covp. NPN SILICON TRANSISTORS 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE M anufacturers of W orld C lass D iscrete S em iconductors


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    PDF 2N3734 2N3735 2N3734, 2N3735 150mA, 500mA, 100mA

    2N2907

    Abstract: 2n2907 TRANSISTOR PNP 2N2906 2N2907 TRANSISTOR 2N2907A 2N2907 a TRANSISTOR 2N2907 PNP Transistor LG 631 IC J 2N2906 transistor 2n2906
    Text: Data Sheet 2N2906, A 2N2907, A C p n t r n 1 Sem iconductor Corp. PNP SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION


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    PDF 2N2906, 2N2907, 2N2906 2N2907 2N2906A 2N2907A 2N2907 2n2907 TRANSISTOR PNP 2N2907 TRANSISTOR 2N2907A 2N2907 a TRANSISTOR 2N2907 PNP Transistor LG 631 IC J 2N2906 transistor 2n2906

    LG 631 IC

    Abstract: 2N4405 ic lg 631 2N4404
    Text: Datasheet Central' 2N4404 2N4405 Sem iconductor Corp. PNP SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 4 4 0 4 , 2N 4 4 0 5 types are PNP Silicon Epitaxial Planar Transistors designed


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    PDF 2N4404 2N4405 2N4404, 2N4405 150mA 500mA 100MHz 500mA, LG 631 IC ic lg 631

    2N6057

    Abstract: 2N6050 2N6051 2N6052 2N6058 2N6059
    Text: Datasheet 2N6050, 2N6051, 2N6052 2N6057, 2N6058, 2N6059 Central PNP NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors


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    PDF 2N6050, 2N6051, 2N6052 2N6057, 2N6058, 2N6059 2N6057 2N6050 2N6051 2N6058

    transistor 2sc 1014

    Abstract: 5 R 107 2sc 1014
    Text: M ic r o s e m i 140 Com merce Drive M ontgomery vil te, PA 18936-1013 Tel: 215 631-9840 TCC20L08 RF & MICROWAVE TRANSISTORS CLASS A MICROWAVE at • • ■ ■ ■ . FREQUENCY 2.0GHz POWER OUT .aw POWER GAIN S.OdB VOLTAGE 20.0V CURRENT 1?0mA CLASS A GOLD MET At. 1.IZEO DIE


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    PDF TCC20L08 TCC20L08 120mA 120mA TCC201 transistor 2sc 1014 5 R 107 2sc 1014

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD1631 2 S D 1 631 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm MICRO MOTOR DRIVE, H A M M ER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. 7.1 MAX PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hjrg = 4000 (Min.)


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    PDF 2SD1631 150mA)

    JU TOSHIBA

    Abstract: No abstract text available
    Text: T O SH IB A TOSHIBA TRANSISTOR 2SD1631 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 631 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. U nit in mm 7.1 MAX High DC C urrent Gain : h p g = 4000 (Min.)


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    PDF 2SD1631 150mA) JU TOSHIBA

    IBJT

    Abstract: 2-7D101A 2SD1631
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SD1631 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 631 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 7.1 MAX 3.8 High DC Current Gain : hjrß = 4000 (Min.)


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    PDF 2SD1631 150mA) IBJT 2-7D101A 2SD1631

    BU724A

    Abstract: No abstract text available
    Text: i i N AMER PHILIPS/DISCRETE APX bbS3^31 002fl307 24? blE » BU724A y v SILICON DIFFUSED POWER TRANSISTORS M onolithic high-voltage npn Darlington transistors w ith integrated speed-up diode in a SOT82 envelope, intended fo r fast switching applications such as small m otor control and switch-mode power supplies


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    PDF 002fl307 BU724A bb53T31 D026311 BU724A