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    IC T100 Search Results

    IC T100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ST1000GXH35 Toshiba Electronic Devices & Storage Corporation IEGT, 4500 V, 1000 A, 2-120B1S Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7SZ07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), SOT-353 (USV), -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7W66FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), SPST Analog Switch, SOT-765 (US8), 2 in 1, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7SET125F Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-25 (SMV), -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
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    IC T100 Price and Stock

    The Kurtz Holding Gmbh & Co Beteiligungs Kg 1ICT1000A00A67

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    DigiKey 1ICT1000A00A67 Bag 4 1
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    Techni-Tool, Inc. 1ICT1000A00A67
    • 1 $625.73
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    TestEquity LLC 1ICT1000A00A67
    • 1 $625.73
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    Smiths Interconnect ICT-100-F-5.5-G S/C

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    Mouser Electronics ICT-100-F-5.5-G S/C 12,598
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    Smiths Interconnect ICT-100-HK-6.7-G S/C

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    Mouser Electronics ICT-100-HK-6.7-G S/C 3,180
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    Smiths Interconnect ICT-100-A-5.5-G S/C

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    Mouser Electronics ICT-100-A-5.5-G S/C 2,447
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    Smiths Interconnect ICT-100-SP-10-G-S S/C

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    Mouser Electronics ICT-100-SP-10-G-S S/C 2,072
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    Find more IC T100 price and stock on Findchips.com

    IC T100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CXD1255Q

    Abstract: cxa1337 cx-7925b sony frequency synthesizer pll ILX501 lhi 778 cn/A/U 237 BG CXD1149 Semicon volume 1 IU02 icx024
    Text: Semiconductor IC Semiconductor Integrated Circuit Data Book 1992 List of Model Names/ Index by Usage Description CCD Image Sensor Color CCD Image Sensor (Black/White) CCD Image Sensor System Scanning System IC for Video Camera Signal Processing IC for Video


    Original     		DE91Z22-HP CXD1255Q cxa1337 cx-7925b sony frequency synthesizer pll ILX501 lhi 778 cn/A/U 237 BG CXD1149 Semicon volume 1 IU02 icx024 PDF

    cmos sensor

    Abstract: 8 PIN CMOS sensor pin diagram T100 6 pin ic T100 T100
    Text: CMOS Sensor Inc T100 CMOS temperature sensor IC GENERAL DESCRIPTION The T100 is a high precision CMOS temperature IC. The output voltage is very linear for the temperature changes. It consists of a temperature sensor, a constant current source and an extra low current operational amplifier. The T100 can


    Original     		PDF

    la71750

    Abstract: la71750em
    Text: Ordering number : EN7952A Monolithic Linear IC LA71750EM For VHS VCR Video Audio Signal Processor Y/C/A/HA/CCD Overview The LA71750EM is a video signal-processing system IC that supports the PAL (G, B and I) 4.43 NTSC, MESECAM, and NAP (G, B, and I) formats for VHS VCRs. Chip internal trimming is used to make this IC fully adjustment free.


    Original     		EN7952A LA71750EM LA71750EM la71750 PDF

    LA71750

    Abstract: 2sc331 transistor t87a 2SC331 equivalent datasheet diode t87a diode T87A diode T74A LA71750EM 2SC331 bit 3252a
    Text: Ordering number : EN7952A Monolithic Linear IC LA71750EM For VHS VCR Video Audio Signal Processor Y/C/A/HA/CCD Overview The LA71750EM is a video signal-processing system IC that supports the PAL (G, B and I) 4.43 NTSC, MESECAM, and NAP (G, B, and I) formats for VHS VCRs. Chip internal trimming is used to make this IC fully adjustment free.


    Original     		EN7952A LA71750EM LA71750EM LA71750 2sc331 transistor t87a 2SC331 equivalent datasheet diode t87a diode T87A diode T74A 2SC331 bit 3252a PDF

    2SA2071

    Abstract: 2SC5824 T100
    Text: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.


    Original     		2SA2071 200mV 2SC5824 R1120A 2SA2071 2SC5824 T100 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.


    Original     		2SA2071 200mV 2SC5824 R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.


    Original     		2SA2071 200mV 2SC5824 R1120A PDF

    dcf77 ferrite antenna

    Abstract: dcf77 AM RECEIVER ferrite antenna MAS6181 dcf77 DA6181B MAS6181B MAS6181B1UC06 KDS Crystals 77,5 AN-T702Lxx
    Text: DA6181B.001 18 November, 2010 MAS6181B AM Receiver IC * * * * * * * Dual Band Receiver IC High Sensitivity Very Low Power Consumption Wide Supply Voltage Range Power Down Control Control for AGC On High Selectivity by Crystal Filter Fast Startup Feature DESCRIPTION


    Original     		DA6181B MAS6181B MAS6181 dcf77 ferrite antenna dcf77 AM RECEIVER ferrite antenna dcf77 MAS6181B MAS6181B1UC06 KDS Crystals 77,5 AN-T702Lxx PDF

    Untitled

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SC5824 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		2SC5824 200mV 200mA) 2SA2071. R1120A PDF

    2SA2071

    Abstract: 2SC5824 T100 60V transistor npn 2a switching applications
    Text: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		2SC5824 200mV 200mA) 2SA2071. 2SA2071 2SC5824 T100 60V transistor npn 2a switching applications PDF

    MARKING CODE 15

    Abstract: 2SA1759 2SC4505 T100
    Text: 2SC4505 Transistors Power Transistor 400V, 0.1A 2SC4505 zDimensions (Unit : mm) zFeatures 1) High breakdown voltage. (BVCEO = 400V) 2) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. 3) High switching speed, typically tf = 1.7µs at Ic =100mA.


    Original     		2SC4505 100mA. 2SC4505 2SA1759. MARKING CODE 15 2SA1759 T100 PDF

    2SA2071

    Abstract: 2SC5824 T100
    Text: Power transistor 60V, 3A 2SC5824 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		2SC5824 200mV 200mA) 2SA2071. R1120A 2SA2071 2SC5824 T100 PDF

    2SA2071

    Abstract: 2SC5824 T100
    Text: 2SA2071 Transistor Power transistor −60V, −3A 2SA2071 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 20ns at IC = −3A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −2A, IB = −0.2A) 3) Strong discharge power for inductive load and


    Original     		2SA2071 -200mV 2SC5824 2SA2071 2SC5824 T100 PDF

    2SC5824

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SC5824 Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071.


    Original     		2SC5824 200mV 200mA) 2SA2071. R1120A 2SC5824 PDF

    2scr375

    Abstract: No abstract text available
    Text: 2SCR375P Datasheet NPN 1.5A 120V Middle Power Transistor lOutline Parameter Value VCEO IC 120V 1.5A MPT3 Base Collector Emitter 2SCR375P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Low VCE(sat) VCE(sat)=0.30V(Max.) (IC/IB=800mA/80mA)


    Original     		2SCR375P SC-62) OT-89> 800mA/80mA) R1102A 2scr375 PDF

    ir 847p

    Abstract: 3010P-K Y744 CNY181V crt5000 2106U T1102G T1103G DT1103 64bcn
    Text: Tem ic S e m i c o n d u c t o r s Optoisolators C haracteristics V io Package Type VRMS CTR V BRCEO Ip = I0 m A IC=1 m A % V @ Ip and Ic V CEsat ton / toff Ic Rl =100 q V mA mA |xs ! mA 6 Pin Optoisolators - with Transistor Output ^ 1 4 N 2 5 2i 3750 100020)


    OCR Scan     		PDF

    U6083B

    Abstract: transistor 81 110 w a4
    Text: Tem ic U6083B S e m i c o n d u c t o r s PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a high side switch. The IC is ideal for use in the brightness con­


    OCR Scan     		u6083b U6083B D-74025 14-Feb-97 transistor 81 110 w a4 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic U6083B S e m i c o n d u c t o r s PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for use in the brightness


    OCR Scan     		U6083B U6083B D-74025 03-Dec-97 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic U6083B S e m i c o n d u c t o r s PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for use in the brightness


    OCR Scan     		U6083B U6083B D-74025 21-Apr-99 PDF

    U6084B

    Abstract: U6084B-FP VT100
    Text: Tem ic U6084B S e m i c o n d u c t o r s PWM Power Control with Automatic Duty Cycle Reduction Description The U6084B is a bipolar technology PWM-IC designed for the control of an N-channel power MOSFET used as a high-side switch. The IC is ideal for use in the brightness


    OCR Scan     		u6084b U6084B D-74025 14-Feb-97 U6084B-FP VT100 PDF

    by 028

    Abstract: No abstract text available
    Text: Tem ic U6084B S e m i c o n d u c t o r s PWM Power Control with Automatic Duty-Cycle Reduction Description The U6084B is a PWM-IC in bipolar technology designed for the control of an N-channel power MOSFET used as a high-side switch. The IC is ideal for the use in


    OCR Scan     		U6084B U6084B D-74025 03-Dec-97 by 028 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic U6081B S e m i c o n d u c t o r s PWM Power Control with Low Duty-Cycle Switch Off Description The U6081B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for the use in the brightness


    OCR Scan     		U6081B U6081B D-74025 03-Dec-97 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic U6081B S e m i c o n d u c t o r s PWM Power Control with Low Duty-Cycle Switch Off Description The U6081B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for the use in the brightness


    OCR Scan     		U6081B U6081B D-74025 21-Apr-99 PDF

    U6081B

    Abstract: VT100 v726
    Text: Tem ic U6081B S e m i c o n d u c t o r s PWM Power Control with Low Duty Cycle Switch Off Description U6081B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a high side switch. The IC is ideal for the use in the brightness


    OCR Scan     		u6081b U6081B D-74025 14-Feb-97 VT100 v726 PDF