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    OMRON Industrial Automation E52-IC10ASY-2M

    T-COUPLE J L=100MM 2M SPRING
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    DigiKey E52-IC10ASY-2M Bulk 1
    • 1 $194.43
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    OMRON Industrial Automation E52-IC10ASY-4M

    T-COUPLE J L=100MM 4M SPRING
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    DigiKey E52-IC10ASY-4M Bulk 1
    • 1 $231.72
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    OMRON Industrial Automation E52-IC10ASY-1M

    T-COUPLE J L=100MM 1M SPRING
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    DigiKey E52-IC10ASY-1M Bulk 1
    • 1 $194.43
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    OMRON Industrial Automation E52-IC10AE-N-2M

    T-COUPLE TYPE J L=100MM
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    DigiKey E52-IC10AE-N-2M Bulk 1
    • 1 $171.85
    • 10 $171.85
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    OMRON Corporation E52-IC10AE-N 2M

    T-COUPLE TYPE J L=100MM - Bulk (Alt: E52IC10AEN2M)
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    Avnet Americas E52-IC10AE-N 2M Bulk 1
    • 1 $136.1304
    • 10 $132.4008
    • 100 $121.212
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    IC10A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 传感器|上海闰安工业传感器有限公司 页码 1/1 电感式接近开关 标准外型尺寸mm 产品序列号 IC10 标准距离Sn(mm) 具 NPN 常开 IC10-BNZ1J - NPN 常闭 IC10-ANZ1J - NPN 常开+常闭 IC10-BANZ1J - DC PNP 常开 IC10-BPZ1J -


    Original     		PDF IC10-ANZ1J IC10-BANZ1J IC10-BPZ1J IC10-APZ1J IC10-BAPZ1J IC10-BLZ1J IC10-BNZ1J IC10-ALZ1J IC10-BL IC10-AL

    Mosfet RM3

    Abstract: rm3 transistor ISFET BAV99LT1G smd transistor 6m RK73H1JT1002F DIODE SMD C212 sanyo c35 smd transistor 6p r315 TRANSISTOR
    Text: Application Note 1544 ISL8200MEVAL2PHZ Evaluation Board User’s Guide VOUT = 1V LOAD UP TO 20A PGOOD VIN = UP TO 20V VOUT SENSING POINT MODULE GROUP 2 U301 IOUT STEP SENSING POINT TRANSIENT LOAD CIRCUIT MODULE GROUP 1 (U201) 12V SUPPLY FOR TRANSIENT LOAD


    Original     		PDF ISL8200MEVAL2PHZ ISL8200M 12VIN 20VIN AN1544 Mosfet RM3 rm3 transistor ISFET BAV99LT1G smd transistor 6m RK73H1JT1002F DIODE SMD C212 sanyo c35 smd transistor 6p r315 TRANSISTOR

    SMR 56-7

    Abstract: HD64F7051 gr4C gr2b transistor to6 4d SH7051 apc ups schematic HD6437050F20 HD64F7050SF20 HD64F7051SF20
    Text: SH7050 Series Hardware Manual ADE-602-121A Rev. 2.0 3/98 Hitachi, Ltd. MC-Setsu Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole


    Original     		PDF SH7050 ADE-602-121A FP-168) SMR 56-7 HD64F7051 gr4C gr2b transistor to6 4d SH7051 apc ups schematic HD6437050F20 HD64F7050SF20 HD64F7051SF20

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE MIG10J855H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10J855H Units in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ● Integrates Inverter, Converter Power Circuits in One Package. ● Output Inverter Stage :


    Original     		PDF MIG10J855H 0A/600V 0A/800V 961001EAAT IC-10A

    HD64F7051

    Abstract: Basic principle of AC to DC conversion using SCR Block diagram of apc double conversion ups SMR 56-7 tod10 HD6437050F20 HD64F7050SF20 HD64F7051SF20 SH7050 SH7051
    Text: SH7050 Series Hardware Manual ADE-602-121 Rev. 1.0 03/09/97 Hitachi, Ltd. MC-Setsu Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole


    Original     		PDF SH7050 ADE-602-121 FP-168) HD64F7051 Basic principle of AC to DC conversion using SCR Block diagram of apc double conversion ups SMR 56-7 tod10 HD6437050F20 HD64F7050SF20 HD64F7051SF20 SH7051

    1gbt

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE MIG10J805H TOSHIBA INTEGRATED 1GBT MODULE SILICON N CHANNEL 1GBT MIG10J805H Units in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ● Integrates Inverter, Converter Power Circuits in One Package ● Output Inverter Stage :


    Original     		PDF MIG10J805H 0A/600V 0A/800V 961001EAAT 1gbt

    General Electric SCR Manual, Fifth Edition, 1972

    Abstract: SH7051 gr4C HD6437050F20 HD64F7051 HD64F7050SF20 HD64F7051SF20 SH7050 pdcr 910 ge PH-13D
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF FP-168B SH7050 General Electric SCR Manual, Fifth Edition, 1972 SH7051 gr4C HD6437050F20 HD64F7051 HD64F7050SF20 HD64F7051SF20 pdcr 910 ge PH-13D

    Hitachi DSA002711

    Abstract: No abstract text available
    Text: SH7050 Series Hardware Manual ADE-602-121A Rev. 2.0 5/20/98 Hitachi, Ltd. MC-Setsu Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole


    Original     		PDF SH7050 ADE-602-121A FP-168) Hitachi DSA002711

    2SD1500

    Abstract: IRF15
    Text: SILICON NPN EPITAXIAL TYPE DARLINGTON POWER 2SD1500 INDUSTRIAL APPLICATIONS Unit in it HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: . High DC Current Gain 1Q.3MAX. 0 3 .6 ± a e : h F E = 1 0 0 0 ( M i n . ) (VCE=2V, Ic=10A) . Low Collector Saturation Voltage


    OCR Scan     		PDF 2SD1500 IC-10A, 2SD1500 IRF15

    2N5417

    Abstract: A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2N5417 A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434

    MA3232

    Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF BVCBO-100V BVCE0-80V BVEBO-15V BVCBO-60V BVCEO-40V BVCB0-80V BVCE0-60V BVCB0-100V MA3232 BF123 CA3036 FT4017 2n1613 replacement A431 BF121 DIODE SJ 98 DM01B

    PNP transistor A705

    Abstract: 2N1620 2sc768 2N1619 UD3008 BD264 BD265A MHT6414 SOT1156 MHT6311
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L PNP transistor A705 2N1620 2sc768 2N1619 UD3008 BD264 MHT6414 SOT1156 MHT6311

    transistor a640

    Abstract: transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor a640 transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918

    BC507

    Abstract: l18b 5.1 channel producing ic BC180 bc507 transistor TIS107 ME60 PET1075 PET1075A PET6003
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF BD265 BD265A BD265B Y220b BD265L BD266L BD267L BC507 l18b 5.1 channel producing ic BC180 bc507 transistor TIS107 ME60 PET1075 PET1075A PET6003

    QM10KD-HB

    Abstract: EM- 546 motor IO741 t15Q Mitsubishi transistor QM10 QM10K
    Text: ! MITSUBISHI TRANSISTOR MODULES I } QM10KD-HB I } ; ? MEDIUM POWER SWITCHING USE j ; INSULATED TYPE } QM10KD-HB • Ic Collector current. 10A Collector-emitter voltage. 60 0 V • hFE DC current gain. 250


    OCR Scan     		PDF QM10KD-HB QM10KD-HB E80276 E80271 EM- 546 motor IO741 t15Q Mitsubishi transistor QM10 QM10K

    OTC4330

    Abstract: 2N6563 2N6561 OTC4530 OTC453Q SVT7600 SVT7601 SVT7602
    Text: MAE D OPTEK TECHNOLOGY INC bTTfiSaO ODDlHfl? 4TS • OTK ■ ProductBulMlnQTC4530 duct Built August 1990 U K Ifc K Fast Switching NPN Power Transistor Type OTC453Q T-ss-n 300V, 30 A ■ a Applications • High Frequency Switching Regulators • Class "D" Amplifiers and Converters


    OCR Scan     		PDF OTC4530 OTC453Q OTC4330 Vcc-150V, 300nsec, 2N6561, 2N6563, SVT7600, SVT7601, OTC4330 2N6563 2N6561 SVT7600 SVT7601 SVT7602

    Y220b

    Abstract: 2N3836 BD264 BD263 BD264A NS9726 BD265 UD3008 2N3837 2N5417
    Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12


    OCR Scan     		PDF BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2N3836 BD264 BD263 BD264A NS9726 UD3008 2N3837 2N5417

    transistor k1502

    Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029

    tea 1601 t

    Abstract: l18b PT23 tea 1601 UD3008 2N2719 ME2001
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF

    BD264

    Abstract: TIP27 BD109 S1050 BD263 BD264A BLY88 BLY92 S708 transistor BD400
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		PDF

    028A5

    Abstract: BD264 MT27 package 2SC5220 2SC5240 B3539 BLY95 MSP90 TA2084
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


    OCR Scan     		PDF

    DIODE SJ 98

    Abstract: CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 DIODE SJ 98 CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995

    80 amp 30v npn darlington

    Abstract: UD3008 transistor 2sc115 bd107a BD265A A515 B3570 B3571 BD106 HFE-10
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L 80 amp 30v npn darlington UD3008 transistor 2sc115 bd107a A515 B3570 B3571 BD106 HFE-10

    transistor A431

    Abstract: MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a
    Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12


    OCR Scan     		PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor A431 MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a