Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ID101 DIODE Search Results

    ID101 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    ID101 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ID101 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil ID101 The ID101 is a low leakage Monolithic Dual Pico-Amp Diode The ID101 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology


    Original     		ID101 ID101 PDF

    UNION CARBIDE

    Abstract: No abstract text available
    Text: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS Crss = 0.75pF 1 ID100 ID101 TO-78 TOP VIEW


    Original     		ID100 ID101 ID100 300mW 25-year-old, UNION CARBIDE PDF

    transistor 2N4393

    Abstract: Dual Amplifier Transistor intersil dual JFET P-Channel Depletion Mode FET intersil JFET high voltage pnp transistor 2N4392 smt a1 transistor NPN
    Text: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V REVERSE CAPACITANCE Crss = 0.75pF ID100 ID101 TO-78 BOTTOM VIEW


    Original     		ID100 ID101 ID100 ID101 300mW transistor 2N4393 Dual Amplifier Transistor intersil dual JFET P-Channel Depletion Mode FET intersil JFET high voltage pnp transistor 2N4392 smt a1 transistor NPN PDF

    ID101 diode

    Abstract: No abstract text available
    Text: ID101 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil ID101 The ID101 is a low leakage Monolithic Dual Pico-Amp Diode The ID101 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology


    Original     		ID101 ID101 ID101 diode PDF

    ID100

    Abstract: 2N4393 Direct Replacement INTERSIL TO-78 2N4117A ID101 OP-27 PA 0016
    Text: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V REVERSE CAPACITANCE Crss = 0.75pF ID100 ID101 TO-78 BOTTOM VIEW


    Original     		ID100 ID101 ID100 300mW ID101 2N4393 Direct Replacement INTERSIL TO-78 2N4117A OP-27 PA 0016 PDF

    id100

    Abstract: No abstract text available
    Text: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V ID100 ID101 Crss = 0.75pF TO-78 TOP VIEW TO-71 TOP VIEW REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS


    Original     		ID100 ID101 ID100 300mW 25-year-old, PDF

    transistor j511

    Abstract: ls n channel jfet Siliconix Dual N-Channel JFET Transistor J310 TRANSISTOR 2n3955 zener zd 31 P-Channel Depletion Mode FET IT132 ID100 dual diode
    Text: J500 SERIES CURRENT REGULATING DIODES Linear Integrated Systems FEATURES SECOND SOURCE FOR SILICONIX J500 SERIES WIDE CURRENT RANGE 0.192 to 5.6mA BIASING NOT REQUIRED VGS = 0V A A K K 1 ABSOLUTE MAXIMUM RATINGS TO-92 BOTTOM VIEW @ 25 °C unless otherwise stated


    Original     		360mW transistor j511 ls n channel jfet Siliconix Dual N-Channel JFET Transistor J310 TRANSISTOR 2n3955 zener zd 31 P-Channel Depletion Mode FET IT132 ID100 dual diode PDF

    smt a1 transistor

    Abstract: smt a1 transistor NPN J507 Replacement n channel 2n4393 2n4416 transistor spice jfet photo diode u406 type u405 siliconix
    Text: DPAD SERIES MONOLITHIC DUAL PICO AMPERE DIODES Linear Integrated Systems FEATURES Direct Replacement For SILICONIX DPAD SERIES HIGH ON ISOLATION 20fA EXCELLENT CAPACITANCE MATCHING ∆CR ≤ 0.2pF ABSOLUTE MAXIMUM RATINGS1 DPAD DPAD1 TO-72 BOTTOM VIEW TO-78


    Original     		500mW smt a1 transistor smt a1 transistor NPN J507 Replacement n channel 2n4393 2n4416 transistor spice jfet photo diode u406 type u405 siliconix PDF

    TO72 package n-channel jfet

    Abstract: PAD1 Spice transistor 2N4393 ls n channel jfet jfet j112 u406 type 2N5019 "direct replacement" J201 Replacement JPAD500
    Text: PAD SERIES PICO AMPERE DIODES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN VOLTAGE REVERSE CAPACITANCE BVR ≥ -30V PAD1,2,5 PAD* Crss ≤ 2.0pF TO-72 BOTTOM VIEW TO-72 BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1


    Original     		300mW 350mW OT-23 TO72 package n-channel jfet PAD1 Spice transistor 2N4393 ls n channel jfet jfet j112 u406 type 2N5019 "direct replacement" J201 Replacement JPAD500 PDF

    high speed Zener Diode

    Abstract: "Dual PNP Transistor" PAD1 Spice a7 P-CHANNEL LS320 j177 TRANSISTOR "Dual npn Transistor" LS3250 2n5019 ultra low noise
    Text: NC G2 G1 NC NC G2 G1 NC Linear Integrated Systems - Lead Pb Free / RoHS Compliant Parts List MAIN MENU Home Page Page 1 of 3 Linear Integrated Systems Lead-Free / RoHS Fact Sheet Products Support Literature Spice Models Downloads Contact Us Distributors


    Original     		PDF

    diode ZENER A8

    Abstract: P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice
    Text: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems Product Summary Features Benefits Applications • Quad SPST Switch with Zener Input Protection • Low Interelectrode Capacitance and Leakage • Ultra-High Speed Switching—tON: 1 ns


    Original     		SD5000/5001/5400/5401 SD5000/5400 diode ZENER A8 P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice PDF

    ultra low igss pA

    Abstract: ultra low igss pA mosfet n channel
    Text: LS5301, PF5301 VERY HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR LF5301, PF5301, & 2N5301 HIGH INPUT INPEDANCE HIGH GAIN IG = 0.100 pA gfs = 70 µS ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated


    Original     		LS5301, PF5301 LF5301, PF5301, 2N5301 300mW ultra low igss pA ultra low igss pA mosfet n channel PDF

    intersil jfet

    Abstract: intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice
    Text: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)


    Original     		3N170 3N171 3N170 3N171 300mW intersil jfet intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice PDF

    2N4351

    Abstract: A6 ZENER DIODE "Dual npn Transistor" J201 spice intersil JFET TO 18 J201 N-channel JFET to 90 intersil JFET JFET NPN AMPLIFIER bare Die mosfet
    Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		2N4351 2N4351 100mA 375mW 100mA A6 ZENER DIODE "Dual npn Transistor" J201 spice intersil JFET TO 18 J201 N-channel JFET to 90 intersil JFET JFET NPN AMPLIFIER bare Die mosfet PDF

    2sk170 spice

    Abstract: j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6
    Text: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE f = 1kHz en = 0.9nV/√Hz HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = -500pA max LOW CAPACITANCE IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170


    Original     		LSK170 LSK389 400mW -500pA 2SK170 OT-23 2sk170 spice j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6 PDF

    N-Channel jfet 100V depletion

    Abstract: transistor j113 15 A PNP POWER TRANSISTOR P-Channel FET 100v to92 Ultra High Input Impedance N-Channel JFET Amplifier Dual N P-Channel 100V P-Channel JFET Switch
    Text: LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE rGs = 100GΩ HIGH TRANSCONDUCTANCE YFS = 30,000µS ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature


    Original     		LS320 200mW N-Channel jfet 100V depletion transistor j113 15 A PNP POWER TRANSISTOR P-Channel FET 100v to92 Ultra High Input Impedance N-Channel JFET Amplifier Dual N P-Channel 100V P-Channel JFET Switch PDF

    ultra low igss pA mosfet

    Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
    Text: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL


    Original     		100pA 360mW ultra low igss pA mosfet ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent PDF

    1D100

    Abstract: ID100 ID101 XID100 XID101
    Text: CALOGIC CORP i+flE D 10*44322 0 0 0 0 3 5 b 7 «CGC 0ual LowLeakaSe " " T 'O U O *3 ! vyivvlv CORPORATION ID100/ID101 GENERAL DESCRIPTION The ID100 and ID101 are monolithic dual diodes intended for use in applications requiring extremely low leakage currents.


    OCR Scan     		M4322 000035b ID100/ID101 ID100 ID101 DD003S7 1D100 XID100 XID101 PDF

    ID100

    Abstract: No abstract text available
    Text: CALOGIC CORP UflE D f /l l A W i /1 CQIOOIC • 1AM4322 000035L. 7 I Dual LowLeaka9e 0 i o c l e T'OUOOl CO RPORA TION ' v ID100/ID101 GENERAL DESCRIPTION The ID 1 00 and ID101 are monolithic dual diodes intended for use in applications requiring extremely low leakage currents.


    OCR Scan     		1AM4322 000035L. ID100/ID101 ID101 ID100 ID101 PDF

    ID100

    Abstract: ID101 T071 ID101 diode
    Text: DIMBHÎ^DIL ID 100, ID101I Low Leakage» M onolithic Dual Diode» FEATURES PIN CONFIGURATIONS • Ir = 0.1 pA typical • BVr > 30 V • Cr = 0.75 pF (typical) TO-71 TO-78 GENERAL DESCRIPTION The ID IO O and ID101 are m o n o lith ic dual diodes intended


    OCR Scan     		ID100, ID101I ID101 10sec. id101 ID100/ID101 ID100 T071 ID101 diode PDF

    2N4351

    Abstract: 3N161 3N163 3N164 3N170 3N171 3N172 3N173 IT1700 IT1750
    Text: 1. D IS C R E T E S Switches and Amplifiers Offering intormatfM Priftrrtd P in Num b« Package — ^G S lh GS(ofl| Min/max V M O SFET Qls BWq s s lo s s max Ig s s max min r DS (on) max talon) min •o (on) min V pA pA pmho u mA mA max P-Chinm l Enhancamtnt: Gen. u se d w here max isolation between signal source and logic drive required: sw. "O n" resistance varies with signal amplitude.


    OCR Scan     		3N161 3N163 3N164 3N172 3N173 IT1700 3N171 IT1750 ID-100 ID-101 2N4351 3N170 PDF

    IT1701

    Abstract: 2N4351 3N172 3N163 3N164 3N170 3N171 IT1750 M116 M117
    Text: I HA R R I S S E M I C O N D S E C T O R 27E D T SeS i; O 4302 27 1 QD157G1 0 BBHAS g • T r'O l" 0 I T -Z -7-Z 5 Switching/Am plifier Transistors M O S F E T s — N -C h a n n e l PART NUMBER PACKAGE VGS TH I V Max Min BVds S V Min •dss pA Max •gss


    OCR Scan     		43G2E71 2N4351 3N170 3N171 IT1750 3N164 3N172 3N173 -10nA IT1700 IT1701 3N163 M116 M117 PDF

    100S

    Abstract: ID100 ID101 ID102 ID103 ID105
    Text: ID100-ID106 SCRs .5 Amp, Planar FEATU RES D E S C R IP TIO N • Voltage Ratings: to 400V • Maximum Gate Trigger Current: 200,uA • Hermetically Sealed TO-18 Metal Can This Data Sheet describes Microsemi’s line of hermetically sealed industrial SCRs designed for low-voltage, low-current sensing application. The IDIOO Series is


    OCR Scan     		ID100-ID106 ID100 ID101 ID102 ID103 ID105 ID105, 100S PDF

    Untitled

    Abstract: No abstract text available
    Text: SCRs ID100-ID106 .5 Amp, Planar FEA TU RES • Voltage R ating s: to 400V • Maximum Gate Trigger Curren t: 200,«A • H erm etically Sealed TO-18 Metal Can • Plan ar Passivated Construction DESCRIPTION This Data Sheet describes Microsemi's line of hermetically sealed industrial SCRs


    OCR Scan     		ID100-ID106 ID100 ID101 ID103 ID102 ID104 PDF