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    ID110 Price and Stock

    ITW Lumex SSI-LXR9126SID110V

    LED RED PNL MNT 6"LDS W/CONN
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    DigiKey SSI-LXR9126SID110V Bag 4,964 1
    • 1 $6.84
    • 10 $4.957
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    • 1000 $3.39148
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    Mouser Electronics SSI-LXR9126SID110V
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    Newark SSI-LXR9126SID110V Bulk 5,000
    • 1 $4.15
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    RS SSI-LXR9126SID110V Bulk 5,000
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    Master Electronics SSI-LXR9126SID110V 56
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    Power Integrations SID1102K-TL

    DGT ISO 1KV 1CH GT DVR ESOP-R16B
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    DigiKey SID1102K-TL Cut Tape 935 1
    • 1 $3.31
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    SID1102K-TL Digi-Reel 1
    • 1 $3.31
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    SID1102K-TL Reel 1,000
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    Avnet Americas SID1102K-TL Reel 18 Weeks 1,000
    • 1 -
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    • 1000 $2.412
    • 10000 $1.876
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    Mouser Electronics SID1102K-TL
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    Newark SID1102K-TL Cut Tape 3,641 1
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    EBV Elektronik SID1102K-TL 20 Weeks 1,000
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    Power Integrations SID1102K

    DGT ISO 1KV 1CH GT DVR ESOP-R16B
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    DigiKey SID1102K Tube 420 1
    • 1 $3.31
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    Avnet Americas SID1102K Tube 18 Weeks 240
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    • 10000 $1.862
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    Mouser Electronics SID1102K
    • 1 $3.3
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    • 1000 $2.58
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    Richardson RFPD SID1102K 1
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    EBV Elektronik SID1102K 20 Weeks 48
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    EPIGAP OSA Photonics OCI-490-20-ID1100-XE-T

    SWIR EMITTER 1100NM SMD DOME LEN
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    DigiKey OCI-490-20-ID1100-XE-T Digi-Reel 190 1
    • 1 $33.45
    • 10 $26.589
    • 100 $26.589
    • 1000 $26.589
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    OCI-490-20-ID1100-XE-T Cut Tape 190 1
    • 1 $33.45
    • 10 $26.589
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    OCI-490-20-ID1100-XE-T Reel 100 100
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    EPIGAP OSA Photonics OCI-490-20-ID1100-STAR

    SWIR EMITTER 1100NM SMD DOME ON
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    DigiKey OCI-490-20-ID1100-STAR Bag 9 1
    • 1 $49.11
    • 10 $39.96
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    Find more ID110 price and stock on Findchips.com

    ID110 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cortex a9

    Abstract: Cortex A9 instruction set PL310 l2 cache verilog code l2 cache design in verilog code PL310 TECHNICAL MANUAL ARM Cortex-A9 cortex-a9 Cortex mpcore verilog code 8 bit LFSR
    Text: AMBA Level 2 Cache Controller L2C-310 Revision: r3p0 Technical Reference Manual Copyright 2007-2009 ARM. All rights reserved. ARM DDI 0246D (ID110109) AMBA Level 2 Cache Controller (L2C-310) Technical Reference Manual Copyright © 2007-2009 ARM. All rights reserved.


    Original     		PDF L2C-310) 0246D ID110109) ID110109 cortex a9 Cortex A9 instruction set PL310 l2 cache verilog code l2 cache design in verilog code PL310 TECHNICAL MANUAL ARM Cortex-A9 cortex-a9 Cortex mpcore verilog code 8 bit LFSR

    AMBA AXI to APB BUS Bridge verilog code

    Abstract: AMBA AXI designer user guide AMBA Network Interconnect NIC-301 Implementation Guide ADR-301 AMBA AXI to AHB BUS Bridge verilog code state diagram of AMBA AXI protocol v 1.0 verilog code for amba apb master AMBA AXI NIC-301 verilog code for amba ahb master
    Text: AMBA Network Interconnect NIC-301 Revision: r2p0 Technical Reference Manual Copyright 2006-2009 ARM. All rights reserved. ARM DDI 0397F (ID110409) AMBA Network Interconnect (NIC-301) Technical Reference Manual Copyright © 2006-2009 ARM. All rights reserved.


    Original     		PDF NIC-301) 0397F ID110409) ID110409 32-bit AMBA AXI to APB BUS Bridge verilog code AMBA AXI designer user guide AMBA Network Interconnect NIC-301 Implementation Guide ADR-301 AMBA AXI to AHB BUS Bridge verilog code state diagram of AMBA AXI protocol v 1.0 verilog code for amba apb master AMBA AXI NIC-301 verilog code for amba ahb master

    Untitled

    Abstract: No abstract text available
    Text: Vision sensors VS ID110M03W10EP ID-110 Article no.: 11048484 Dimension drawing 112,9 99,5 40 4x M4 /4 28,5 40 38 51 53 General data Photo Resolution 752 x 480 pixels LED illumination White, LED class: risk group 1 low risk, EN 62471:2008 Speed High Resolution Mode:


    Original     		PDF ID110M03W10EP ID-110 RSS-14) PDF417 DPM-1-2006

    16N60

    Abstract: 16N60C2D1
    Text: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original     		PDF 16N60C2 16N60C2D1 IC110 ID110 16N60C2D1 O-220 728B1 123B1 16N60

    Diode smd s6 68

    Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
    Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		PDF GWM100-0085X1 IF110 ID110 A0-0085X1 100-085X1-SL 100-085X1-SMD 100-0085X1 100-0085X1 Diode smd s6 68 S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77

    SMD MARKING code L1

    Abstract: smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ
    Text: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		PDF 180-004X2 IF110 ID110 1004X2 180-004X2-SL 180-004X2-SMD 180-004X2 SMD MARKING code L1 smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ

    50904

    Abstract: No abstract text available
    Text: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Symbol


    Original     		PDF 3x180-004X2 ID110 IF110 20100713a 50904

    T1N200

    Abstract: No abstract text available
    Text: Advance Technical Information IXTA1N200P3HV IXTH1N200P3 High Voltage Power MOSFETs VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000


    Original     		PDF IXTA1N200P3HV IXTH1N200P3 O-263HV ID110 100ms 1N200P3 T1N200

    16N60B2D

    Abstract: No abstract text available
    Text: Advance Technical Information IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface D1 Symbol Test Conditions Maximum Ratings


    Original     		PDF 16N60B2 16N60B2D1 ISOPLUS220TM IC110 ID110 IXGC16N60C2D1 220TM E153432 405B2 16N60B2D

    IXGR40N60C2D1

    Abstract: 40n60c2 ixgr 40n60c2d1 40n60c2d1 40n60c ixgr40n60c2 40n60 074K
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60C2 IXGR 40N60C2D1 = = VCE SAT = tfi(typ = VCES IC25 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 40N60C2 40N60C2D1 247TM IC110 ID110 40N60C2D1) IXGR40N60C2D1 40n60c2 ixgr 40n60c2d1 40n60c2d1 40n60c ixgr40n60c2 40n60 074K

    MTI150WX40GD

    Abstract: ID110 SMD MARKING g3
    Text: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions


    Original     		PDF 3x180-004X2 ID110 IF110 lev200 20110307b MTI150WX40GD SMD MARKING g3

    Lesen Sie mehr!

    Abstract: No abstract text available
    Text: VeriSens Vision Sensoren Bildbasierte Qualitätskontrolle − einfach und intuitiv. Behalten Sie Ihre ­Qualität im Blick! 2 Einfach auf das Wesentliche konzentriert. Baumer ist ein international führendes Unter­ nehmen für Sensorik im Bereich der Fabrik- und


    Original     		PDF

    Industrial Cameras

    Abstract: No abstract text available
    Text: Technical Report Solar module inspection Solar modules designed to face a rough mission Industrial image processing components for the targeted optimization of the solar modules manufacturing The quality of solar modules is now, and will be in the future, a subject to utmost


    Original     		PDF DE-01454 Industrial Cameras

    Untitled

    Abstract: No abstract text available
    Text: Solutions innovantes de détecteurs Vue d’ensemble – Edition 2015 Partenariat. Précision. Innovation. Visiblement meilleurs: les détecteurs Baumer. Le Groupe Baumer, acteur majeur international, développe et fabrique des capteurs, codeurs, instruments de mesure ainsi que des composants pour le traitement d’image


    Original     		PDF CH-8501 0x/12 11xxxxxx

    48N60C3D1

    Abstract: ixgr48n60c3d1 48N60
    Text: GenX3TM 600V IGBT with Diode IXGR48N60C3D1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤ = 600V 56A 2.7V 38ns High Speed PT IGBTs for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR


    Original     		PDF IXGR48N60C3D1 40-100kHz IC110 247TM ID110 48N60C3D1 ixgr48n60c3d1 48N60

    smd diode marking code L2

    Abstract: marking G5 MOSFET smd part marking
    Text: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications


    Original     		PDF 180-004X2 ID110 IF110 20110307c smd diode marking code L2 marking G5 MOSFET smd part marking

    GMM 3x180-004x2

    Abstract: smd diode g6 smd diode g6 DIODE S4 39 smd diode DIODE smd marking l3 IF110
    Text: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		PDF 3x180-004X2 IF110 ID110 3x180-004X2 GMM 3x180-004x2 smd diode g6 smd diode g6 DIODE S4 39 smd diode DIODE smd marking l3 IF110

    baumer ENCODER

    Abstract: Lesen Sie mehr!
    Text: Innovation and Technology Edition 01|2011 Leitartikel | Editorial Geschätzte Leserinnen, geschätzte Leser Dear reader Zweimal im Jahr stellen wir Ihnen mit dem Sensorama besondere Produktinnovationen und Branchenlösungen vor – manchmal sogar mit Weltneuheiten wie in dieser Ausgabe.


    Original     		PDF CH-8501 baumer ENCODER Lesen Sie mehr!

    Untitled

    Abstract: No abstract text available
    Text: 19-4598; Rev 1; 7/09 KIT ATION EVALU E L B AVAILA 16-Bit, RISC, Microcontroller-Based, Ultrasonic Distance-Measuring System Features The MAXQ7667 smart system-on-a-chip SoC provides a time-of-flight ultrasonic distance-measuring solution. The device is optimized for applications involving large distance measurement with weak input signals or multiple


    Original     		PDF 16-Bit, MAXQ7667 25kHz 100kHz.

    Magnetic Field Sensor FLC 100

    Abstract: No abstract text available
    Text: Photoelectric sensors. Fiber optics and fiber optic sensors. Precise, measurably better. Edition 2013 Photoelectric sensors by Baumer combine tried and tested technology and sophisticated innovations. Visibly better: Baumer sensors. The Baumer Group is leading at international level in the development and


    Original     		PDF CH-8501 0x/12 11xxxxxx Magnetic Field Sensor FLC 100

    16N60C2D1

    Abstract: 16N60C2 E153432 IXGC16N60C2D1
    Text: IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case VCES IC25 VCE sat Electrically Isolated Back Surface tfi(typ) = 600 V = 20 A = 3.0 V = 35 ns Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF 16N60C2 16N60C2D1 ISOPLUS220TM IC110 ID110 IXGC16N60C2D1 405B2 16N60C2D1 16N60C2 E153432

    SMD mosfet MARKING code TC

    Abstract: smd diode g6 SMD MARKING CODE s4 IF110 diode L2 smd smd diode code g3 smd diode code g6 smd diode marking code L2 Control of Starter-generator DIODE marking S6 57
    Text: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		PDF GMM3x60-015X2 IF110 ID110 3x60-015X2 3x60-015X2 SMD mosfet MARKING code TC smd diode g6 SMD MARKING CODE s4 IF110 diode L2 smd smd diode code g3 smd diode code g6 smd diode marking code L2 Control of Starter-generator DIODE marking S6 57

    Untitled

    Abstract: No abstract text available
    Text: DRAWING No.: M 4 0 - 1 1 0 XX 00 IF IN DOUBT - A SK NOT TO SCALE THIRD ANGLE PROJECTION DIM A 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 mm B 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 ID1101ID1IDIIDI NO. OF WAYS 2 3 4 5 6 7 8 9 10


    OCR Scan     		PDF M4Q-110

    Untitled

    Abstract: No abstract text available
    Text: I & Q DEMODULATORS QUADRATURE I.F. MIXERS 2 (1) C arrier (LO) RF I& Q Conversion Frequency Frequency Frequency Loss (MHz) (MHz) (MHz) (dB) m ax. A m p litu d e Phase B alan ce B alan ce (dB) (deg) m ax. m ax. Isolation L/R L/l (dB) (dB) m in. m in. VSW R


    OCR Scan     		PDF DC-20 ID-70-E ID-110-E DC-50 ID-240-E ID-800-E ID-900-E