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    Infineon Technologies AG IDC51D120T6HX1SA1

    Diode Standard Recovery Rectifier 100A DIE Wafer (Alt: SP000301863)
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    EBV Elektronik IDC51D120T6HX1SA1 2 Weeks 1
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    IDC51D120T6H Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IDC51D120T6H Infineon Technologies Chip Diodes; Package: --; Technology: Emitter Controlled Diode 4 High Power; VDS (max): 1,200.0 V; IF (max): 100.0 A; IF,SM (max): -; VF (typ): 1.9 V Original PDF

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    l4673

    Abstract: IDC51D120T6H
    Text: IDC51D120T6H Diode EMCON 4 High Power Chip FEATURES: • 1200V EMCON 4 technology • soft, fast switching • low reverse recovery charge • small temperature coefficient A This chip is used for: • medium / high power modules C Applications: • medium / high power drives


    Original     		PDF IDC51D120T6H L4673A, l4673 IDC51D120T6H