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    IDP45E60 Price and Stock

    Infineon Technologies AG IDP45E60XKSA1

    DIODE GP 600V 71A TO220-2-2
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    IDP45E60 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IDP45E60 Infineon Technologies Fast Switching Diode, 600V, 45A, Silicon Diode, Fast recovery, Stamping Code:D45E60 Original PDF
    IDP45E60 Infineon Technologies 600V Standard Silicon Power Diodes Original PDF
    IDP45E60 Infineon Technologies 600V Silicon Power Diodes; Package: PG-TO220-2; IF (typ): 45.0 A; IF (max): 71.0 A; IF,SM (max): 162.0 A; VF (typ): 1.5 V; IR (max): 50.0 uA; Original PDF
    IDP45E60XKSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 600V 71A TO220-2 Original PDF
    IDP45E60XKSA2 Infineon Technologies DISCRETE SWITCHES Original PDF

    IDP45E60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d45e60

    Abstract: INFINEON D45E60 s446 IDB45E60 IDP45E60 Q67040-S4375 Q67040-S4469 fast recovery diode 400v 5A
    Text: IDP45E60 IDB45E60 Preliminary data Fast Switching EmConDiode Product Summary Feature 600 V IF 45 A VF 1.45 V Tjmax 175 °C VRRM 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge P-TO220-3.SMD Low forward voltage


    Original     		PDF IDP45E60 IDB45E60 P-TO220-3 P-TO220-2-2. Q67040-S4469 D45E60 d45e60 INFINEON D45E60 s446 IDB45E60 IDP45E60 Q67040-S4375 Q67040-S4469 fast recovery diode 400v 5A

    D45E60

    Abstract: No abstract text available
    Text: IDP45E60 Fast Switching Switching Diode Emitter Controlled Diode Fast Product Summary Features VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C • 600V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage


    Original     		PDF IDP45E60 PG-TO220-2 IEC61249-2-21 D45E60 D45E60

    d45e60

    Abstract: IDP45E60 INFINEON D45E60 7008
    Text: IDP45E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C PG-TO220-2-2. • Low forward voltage C • 175°C operating temperature


    Original     		PDF IDP45E60 PG-TO220-2-2. D45E60 d45e60 IDP45E60 INFINEON D45E60 7008

    d45e60

    Abstract: IDP45E60
    Text: IDP45E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C PG-TO220-2-2. • Low forward voltage • 175°C operating temperature


    Original     		PDF IDP45E60 PG-TO220-2-2. Q67040-S4469 D45E60 d45e60 IDP45E60

    d45e60

    Abstract: INFINEON D45E60 Q67040-S4375 IDP45E60 IDB45E60 Q67040-S4469
    Text: IDP45E60 IDB45E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.


    Original     		PDF IDP45E60 IDB45E60 P-TO220-3 P-TO220-2-2. Q67040-S4469 D45E60 d45e60 INFINEON D45E60 Q67040-S4375 IDP45E60 IDB45E60 Q67040-S4469

    D45E60

    Abstract: INFINEON D45E60 DIODE 1000a IDP45E60 Diode 400V 5A fast recovery diode 400v 5A IEC61249-2-21 if45a 1000A diode switching DIODE 1000A
    Text: IDP45E60 Fast Switching Diode Product Summary Features • 600 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant


    Original     		PDF IDP45E60 PG-TO220-2 IEC61249-2-21 PG-TO220-2-2. D45E60 D45E60 INFINEON D45E60 DIODE 1000a IDP45E60 Diode 400V 5A fast recovery diode 400v 5A IEC61249-2-21 if45a 1000A diode switching DIODE 1000A

    G50N60HS

    Abstract: G50N60 G50N60*HS SGW50N60HS SGW50N60HS equivalent 207E-04 g50n SGW50N60 200nC IDP45E60
    Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGW50N60HS PG-TO-247-3-21 Eoff25 G50N60HS G50N60HS G50N60 G50N60*HS SGW50N60HS SGW50N60HS equivalent 207E-04 g50n SGW50N60 200nC IDP45E60

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IDB45E60 Fast Switching Switching EmCon Emitter Diode Controlled Diode Fast Product Summary Feature VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C • 600 EmConControlled technologytechnology 600VV Emitter • Fast recovery 2 • Soft switching • Low reverse recovery charge


    Original     		PDF IDB45E60 PG-TO263-3 D45E60

    G50N60

    Abstract: g50n60hs G50N60*HS SGW50N60HS g50n60h IDP45E60 PG-TO-247-3 SGW50N60HS equivalent SGW50N60
    Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGW50N60HS PG-TO-247-3 Eoff25 G50N60HS G50N60 g50n60hs G50N60*HS SGW50N60HS g50n60h IDP45E60 PG-TO-247-3 SGW50N60HS equivalent SGW50N60

    G50N60*HS

    Abstract: g50n60hs 200nC Eoff25 G50N60 SGW50N60HS
    Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGW50N60HS Eoff25 PG-TO-247-3-21 SGW50N60HS 100stances. G50N60*HS g50n60hs 200nC G50N60

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    Untitled

    Abstract: No abstract text available
    Text: IDB45E60 Fast Switching Switching EmCon Emitter Diode Controlled Diode Product Summary Feature • 600V 600 VEmitter EmConControlled technologytechnology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 45 A VF 1.5 V T jmax


    Original     		PDF IDB45E60 PG-TO263-3-2 D45E60

    G50N60HS

    Abstract: G50N60 G50N60*HS SGW50N60HS IDP45E60 PG-TO-247-3 207E-04 SGW50N60HS equivalent
    Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGW50N60HS PG-TO-247-3 Eoff25 G50N60HS G50N60HS G50N60 G50N60*HS SGW50N60HS IDP45E60 PG-TO-247-3 207E-04 SGW50N60HS equivalent

    D45E60

    Abstract: RR350 INFINEON D45E60 IDB45E60 IDP45E60 Q67040-S4375
    Text: IDB45E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage • 175°C operating temperature


    Original     		PDF IDB45E60 P-TO220-3 Q67040-S4375 D45E60 D45E60 RR350 INFINEON D45E60 IDB45E60 IDP45E60 Q67040-S4375

    g50n60hs

    Abstract: G50N60 G50N60*HS SGW50N60HS g50n60h SGW50N60HS equivalent G50N60hs IGBT 207E-04 SGW50N60 PG-TO247-3
    Text: o SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGW50N60HS Eoff25 PG-TO-247-3-1 SGW50N60HS 100substances. g50n60hs G50N60 G50N60*HS g50n60h SGW50N60HS equivalent G50N60hs IGBT 207E-04 SGW50N60 PG-TO247-3

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


    Original     		PDF

    d45e60

    Abstract: INFINEON D45E60 DIODE 1000a IDB45E60 IDP45E60 PG-TO263-3-2 Diode 400V 5A smd 0.5 400v
    Text: IDB45E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C PG-TO263-3-2 • Low forward voltage • 175°C operating temperature


    Original     		PDF IDB45E60 PG-TO263-3-2 D45E60 d45e60 INFINEON D45E60 DIODE 1000a IDB45E60 IDP45E60 PG-TO263-3-2 Diode 400V 5A smd 0.5 400v