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    IDT LAND PATTERN TSOP 6 Search Results

    IDT LAND PATTERN TSOP 6 Result Highlights (1)

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    BQ2052SN-A515 Texas Instruments Primary Lithium Gas Gauge W/High-Speed 1-Wire (HDQ) Interface, 3 Prgmable LED Patterns 16-SOIC -20 to 70 Visit Texas Instruments Buy

    IDT LAND PATTERN TSOP 6 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: J d t 3.3V CMOS STATIC RAM 4 MEG 512K X 8-BIT) ADVANCE r o V424S IDT71V424L I n t e g r a t e d D e i/ ic e T e c h n o l o g y , I n c . FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise


    OCR Scan     		V424S IDT71V424L 10/12/15ns 36-pin, 44-pin, IDT71V424 304-bit PDF

    woy transistor

    Abstract: No abstract text available
    Text: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,


    OCR Scan     		128KX IDT71T024L 150ns, 200ns 32-pin IDT71T024L 576-bit 10-338-207Q woy transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,


    OCR Scan     		128Kx IDT71V024L T71V024L 576-bit 10-338-207Q PDF

    land pattern for TSOP 2 44 PIN

    Abstract: No abstract text available
    Text: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,


    OCR Scan     		128Kx IDT71V024L 100ns 32-pin T71V024L 576-bit 10-338-207Q land pattern for TSOP 2 44 PIN PDF

    DD27D

    Abstract: land pattern for TSOP 2 50 MB257 TM 1828
    Text: 3.3V CMOS STATIC RAM 32Kx 16-BIT PRELIMINARY IDT71V008 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times — 10/12/15/20ns • One Chip Select plus one Output Enable pin


    OCR Scan     		16-BIT IDT71V008 10/12/15/20ns 44-pin IDT71V008 288-bit 910-338-207Q DD27D land pattern for TSOP 2 50 MB257 TM 1828 PDF

    TIP 3771

    Abstract: 3771 E1 3771 8 pin ic
    Text: LOW PO W ER 3V C M O S S R A M 1 M EG 64Kx 16-BIT ADVANCE INFORMATION IDT71L016 In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • 64K x 16 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)


    OCR Scan     		16-BIT) IDT71L016 100ns 10jxA 44-pin 46-BALL IDT71L016 576-bit TIP 3771 3771 E1 3771 8 pin ic PDF

    Untitled

    Abstract: No abstract text available
    Text: d t ) LOW POWER 3.3V CMOS FAST SRAM 256K 32K x 8-BIT) IDT71V256SA In tegrated D evice T echnology, Inc. FEATURES DESCRIPTION • Ideal for high-performance processor secondary cache • Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options


    OCR Scan     		IDT71V256SA 10/12/15/20ns 28-pin IDT71V256SA 144-bit 727-C11« 492-M74 10-U4-2070 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for


    OCR Scan     		IDT71124 12/15/20ns 32-pin IDT71124 576-bit MO-061, S5771 PDF

    Untitled

    Abstract: No abstract text available
    Text: jd t Integrated Device Technology, Inc. 3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K 32K x 8-BIT) IDT71V256SB FEATURES DESCRIPTION • Ideal for high-perform ance processor secondary cache • Fast access tim es: — 12/15/20ns • Inputs are 2.5V and LVTTL com patible: V ih = 1,8V


    OCR Scan     		IDT71V256SB T71V256SB 144-bit IDT71V256SB IDT71V256SA. 727-C11« 492-M 4A25771 PDF

    Untitled

    Abstract: No abstract text available
    Text: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for


    OCR Scan     		IDT71V124SA 10/12/15/20ns 32-pin 400-mil 32pin IDT71V124 576-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: jdt 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT) PRELIMINARY I n t e g r a t e d D e v i c e T e c h n o lo g y , In c . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center P ow er/G N D pinout for reduced noise. • Equal access and cycle times


    OCR Scan     		16-BIT) 10/12/15ns 44-pin, IDT71V416 194304-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW POWER 2V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71T016 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 64K x 16 Organization • Wide Operating Voltage Range: 1.8 to 2.7V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)


    OCR Scan     		16-BIT) IDT71T016 150ns, 200ns 10jxA 44-pin 46-BALL IDT71T016 576-bit 10-338-207Q PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)


    OCR Scan     		128KX IDT71T024 150ns, 200ns 10jxA 32-pin, 46-BALL IDT71T024 576-bit 10-338-207Q PDF

    ed9a

    Abstract: woy transistor
    Text: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)


    OCR Scan     		128KX IDT71T024 150ns, 200ns 10jxA 32-pin, 46-BALL IDT71T024 576-bit 10-338-207Q ed9a woy transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71L024 Integrated Devise Technology, ]hc. FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)


    OCR Scan     		128Kx IDT71L024 100ns 32-pin, 46-BALL T71L024 576-bit 910-338-207Q PDF

    ln 3624

    Abstract: ansi y14.5m-1982 decimal .xxxx 71V416S15
    Text: PRELIMINARY IDT71V416 3.3V CMOS STATIC RAM 4 MEG 256Kx 16-BIT I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center Power /GND pinout for reduced noise. • Equal access and cycle times


    OCR Scan     		256Kx 16-BIT) IDT71V416 8/10/12/15ns 44-pin, IDT71V416 194304-bit high-reliabil005 MS-027, ln 3624 ansi y14.5m-1982 decimal .xxxx 71V416S15 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT70V08S/L F e a tu re s True Dual-Ported memory cells which allow simultaneous access of the same memory location * High-speed access * - * Low-power operation - ♦ Com m ercial: 15/20/25/35ns max. ID T70V08S


    OCR Scan     		IDT70V08S/L 15/20/25/35ns T70V08S IDT70V08L IDT70V08 492-M PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH SPEED 4K X 8 DUAL-PORT STATIC RAM WITH SEMAPHORE D e sc rip tio n F e a tu re s • High-speed access - Commercial: 20/25/35/45/55/70ns max. • Low-power operation - IDT71342SA Active: 700mW(typ.) Standby: 5m W (typ.) - ID T 7 1 3 4 2 S A /L A IDT71342LA


    OCR Scan     		20/25/35/45/55/70ns IDT71342SA 700mW IDT71342LA T71342 492-M PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT70V07S/L F e a tu re s True Dual-Ported memory cells which allow simultaneous access of the same memory location ♦ High-speed access ♦ - ♦ Commercial: 25/35/55ns max. Low-power operation -


    OCR Scan     		IDT70V07S/L 25/35/55ns IDT70V07S 300mW IDT70V07L 68-pin 80-pin IDT70V07 MO-136, PDF

    land pattern tsop 66

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM IDT70V05S/L F e a tu re s ♦ True Dual-Ported memory cells which allow simultaneous reads of the same memory location ♦ High-speed access Commercial: 25/35/55ns max. * Low-power operation IDT70V05S Active: 230mW (typ.)


    OCR Scan     		IDT70V05S/L 25/35/55ns IDT70V05S 230mW IDT70V05L 660/iW IDT70V05 492-M land pattern tsop 66 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 *8 *« S \ 4»* «tt *« ' S'» \ 4k* «t *&*«&&* *4 K *t '4t 4 'S 4k 4k' HIGH-SPEED 3.3V 16Kx 8 DUAL-PORT STATIC RAM IDT70V06S/L F e a tu re s True Dual-Ported memory cells which allow simultaneous reads of the same memory location ♦ High-speed access


    OCR Scan     		IDT70V06S/L 25/35/55ns IDT70V06S 230mW IDT70V06L 660mW IDT70V06 492-M PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM F e a tu re s * * True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access - * ♦ ♦ ♦ ♦ Low-power operation - ♦ Commercial: 25/35/55ns max. IDT70V261S


    OCR Scan     		25/35/55ns IDT70V261S 300mW IDT70V261L 660mW IDT70V261S/L IDT70V261 492-M PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 4 K x 16 DUAL-PORT STATIC RAM F e a tu re s True Dual-Ported memory cells which allow simultaneous reads of the same memory location ♦ High-speed access ♦ - ♦ Com mercial: 25/35/55ns max. Low-power operation - IDT70V24S A ctive: 23 0 m W (typ.)


    OCR Scan     		25/35/55ns IDT70V24S IDT70V24L IDT70V24 IDT70V24S/L MO-136, 492-M74 PSC-4036 PDF

    37 TV samsung lcd Schematic circuit diagram

    Abstract: schematic diagram inverter lcd monitor fujitsu lmg9970zwcc FLC31SVC6S schematic diagram crt tv sharp hitachi tx31 LT133X1-124 37 TV samsung lcd Schematic schematic diagram tv sharp sanyo schematic diagram dvd s1
    Text: 65550/554/555 & 69000 HiQVideo Series Application Note Book Revision 1.0 June 1998  Copyright Notice Copyright 1998 Chips and Technologies, Inc., a subsidiary of Intel Corporation. ALL RIGHTS RESERVED. This manual is copyrighted by Chips and Technologies, Inc., a subsidiary of Intel Corporation. You may not reproduce, transmit ,


    Original     		655xx AN119 37 TV samsung lcd Schematic circuit diagram schematic diagram inverter lcd monitor fujitsu lmg9970zwcc FLC31SVC6S schematic diagram crt tv sharp hitachi tx31 LT133X1-124 37 TV samsung lcd Schematic schematic diagram tv sharp sanyo schematic diagram dvd s1 PDF