Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IE 49 TRANSISTOR Search Results

    IE 49 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    IE 49 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ô 23 b 3 2 0 QQlbb7Q PNP Silicon Darlington Transistors 2 msip BCV 28 BCV 48 S IE M E N S / SPCL-i SEMICONDS For general AF applications High collector current High current gain Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering code


    OCR Scan
    Q62702-C1683 Q62702-C1685 Q62702-C1852 Q62702-C1854 6E3b32Q 0Qlbb73 BCV28 BCV48 T-29-29 PDF

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ô23b320 ISIP Q Q lb b 7 4 BCV 29 BCV 49 NPN Silicon Darlington Transistors S IE M E N S / • • • • SPCL-, SEM IC O N BS For genera! A F applications High collector current High current gain Complementary types: B C V 28, B C V 48 PNP Type


    OCR Scan
    23b320 Q62702-C1684 Q62702-C1686 Q62702-C1853 Q62702-C1832 53b350 G01bb77 BCV29 BCV49 T-29-29 PDF

    service-mitteilungen

    Abstract: electronica rft Servicemitteilungen VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN radio fernsehen elektronik scans-048 "service-mitteilungen" Leipzig RFT Service RFT Transistoren
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D FE R N S E H E N Iradio -teievision \ Versorgung mit Bildröhren AUSGABE' 6/73 DATUM: Juni 1973 B 53 G2 Auf der Grundlage der Anordnung über die Rückführung und den Ein­ satz von Bildröhrenkolben GBl. II Nr. 49 vom 23.August 1972 müs­


    OCR Scan
    PDF

    BCW89R

    Abstract: BCW89 DSA003674
    Text: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW89 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059


    Original
    BCW89 BCW89R -10mA, -50mA, 35MHz 200Hz BCW89R BCW89 DSA003674 PDF

    BCW70R

    Abstract: BCW69R BCW69 BCW70 720 sot23 DSA003673
    Text: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW69 BCW70 BCW69 BCW70 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085


    Original
    BCW69 BCW70 BCW69R BCW70R -10mA, -50mA, BCW70R BCW69R BCW69 BCW70 720 sot23 DSA003673 PDF

    Q62702-C2136

    Abstract: Q62702-C2137
    Text: NPN Silicon Darlington Transistors BCP 29 BCP 49 For general AF applications ● High collector current ● High current gain ● Complementary types: BCP 28/48 PNP ● Type Marking Ordering Code (tape and reel) BCP 29 BCP 49 BCP 29 BCP 49 Q62702-C2136 Q62702-C2137


    Original
    Q62702-C2136 Q62702-C2137 OT-223 Q62702-C2136 Q62702-C2137 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCP 29, BCP 49 Darlington Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung ±0.2 6.5 ±0.1 3 1.65 2.3 2 ±0.2 3.5 ±0.3 7 0.7 1.5 W Plastic case


    Original
    OT-223 UL94V-0 PDF

    VPS05163

    Abstract: No abstract text available
    Text: BCP 29, BCP 49 NPN Silicon Darlington Transistors • For general AF applications 4 • High collector current • High current gain • Complementary types: BCP 28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP 29


    Original
    VPS05163 EHA00009 OT-223 EHP00255 EHP00256 EHP00257 EHP00258 Oct-20-1999 VPS05163 PDF

    marking BCV

    Abstract: bcv 49
    Text: BCV 29, BCV 49 NPN Silicon Darlington Transistors 1 • For general AF applications 2 • High collector current 3 • High current gain • Complementary types: BCV 28, BCV 48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV 29 EF 1=B 2=C 3=E 4=C


    Original
    VPS05162 OT-89 EHP00322 EHP00323 EHP00324 EHP00325 Sep-30-1999 marking BCV bcv 49 PDF

    EHA00009

    Abstract: BCP29 BCP49 VPS05163
    Text: BCP29, BCP49 NPN Silicon Darlington Transistors  For general AF applications 4  High collector current  High current gain  Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29


    Original
    BCP29, BCP49 BCP28/48 VPS05163 EHA00009 BCP29 OT223 EHA00009 BCP29 BCP49 VPS05163 PDF

    BCP29

    Abstract: BCP49 VPS05163
    Text: BCP29, BCP49 NPN Silicon Darlington Transistors  For general AF applications 4  High collector current  High current gain  Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29


    Original
    BCP29, BCP49 BCP28/48 VPS05163 EHA00009 BCP29 OT223 BCP29 BCP49 VPS05163 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCP29, BCP49 NPN Silicon Darlington Transistors  For general AF applications 4  High collector current  High current gain  Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29


    Original
    BCP29, BCP49 BCP28/48 VPS05163 EHA00009 BCP29 OT223 OT223 PDF

    BCV49

    Abstract: BCV28 BCV29 BCV48
    Text: BCV29, BCV49 NPN Silicon Darlington Transistors 1  For general AF applications 2  High collector current 3  High current gain  Complementary types: BCV28, BCV48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E 4=C SOT89 BCV49


    Original
    BCV29, BCV49 BCV28, BCV48 VPS05162 BCV29 EHP00322 BCV49 BCV28 BCV29 BCV48 PDF

    BCV48

    Abstract: bcv49 npn darlington BCV28 BCV29 BCV49
    Text: BCV29, BCV49 NPN Silicon Darlington Transistors • For general AF applications 1 2 • High collector current 3 2 • High current gain • Complementary types: BCV28, BCV48 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type


    Original
    BCV29, BCV49 BCV28, BCV48 BCV29 BCV48 bcv49 npn darlington BCV28 BCV29 BCV49 PDF

    BCV48

    Abstract: BCV29
    Text: BCV29, BCV49 NPN Silicon Darlington Transistors • For general AF applications 1 2 • High collector current 3 2 • High current gain • Complementary types: BCV28, BCV48 PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type


    Original
    BCV29, BCV49 BCV28, BCV48 BCV29 BCV49 BCV48 PDF

    ic 4446

    Abstract: ZUMT591 SOT323 2222 transistor b 622
    Text: SOT323 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ZUMT591 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . PARAMETER SYMBOL MIN. Static Forward Current Transfer Ratio hFE 100 100 80 15 Transition Frequency fT Ouput Capacitance Cobo TYP. MAX. UNIT IC=-1mA, VCE=-5V*


    Original
    OT323 ZUMT591 -500mA, 500mW -50mA, 100MHz OT323 -50mA* ic 4446 ZUMT591 SOT323 2222 transistor b 622 PDF

    BCV29

    Abstract: No abstract text available
    Text: BCV29, BCV49 NPN Silicon Darlington Transistors 1  For general AF applications 2  High collector current 3  High current gain  Complementary types: BCV28, BCV48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E 4=C SOT89 BCV49


    Original
    BCV29, BCV49 BCV28, BCV48 VPS05162 BCV29 BCV49 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCV29, BCV49 NPN Silicon Darlington Transistors 1  For general AF applications 2  High collector current 3  High current gain  Complementary types: BCV28, BCV48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E 4=C SOT89 BCV49


    Original
    BCV29, BCV49 BCV28, BCV48 VPS05162 BCV29 BCV49 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCP49 NPN Silicon Darlington Transistors • For general AF applications 4 • High collector current • High current gain 3 2 C 2,4 1 B(1) VPS05163 E(3) EHA00009 Type Marking BCP49 BCP 49 Pin Configuration 1=B 2=C 3=E Package 4=C SOT223 Maximum Ratings


    Original
    BCP49 VPS05163 EHA00009 OT223 PDF

    Transistor BSX 95

    Abstract: k 49 transistor LC 500-S BSX49 Q60218-X48 Q60218-X49 bsx 30 BSX48 Scans-0010549
    Text: IMPIM-Transistoren fü r HF-Schalteranwendungen BSX 48 BSX 49 Die Transistoren BSX 48 und BSX 49 sind doppeltdiffundierte epitaktische Silizium-Transistoren in Planar-Technik im Gehäuse 18 A3 DIN 41 876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden.


    OCR Scan
    Q60218-X48 Q60218-X49 Transistor BSX 95 k 49 transistor LC 500-S BSX49 Q60218-X48 Q60218-X49 bsx 30 BSX48 Scans-0010549 PDF

    BCP49

    Abstract: BCP52-16 FT1513
    Text: BCP49 PNP Silicon Darlington Transistor • For general AF applications • High collector current 4 3 2 • High current gain 1 C 2,4 B(1) E(3) EHA00009 Type BCP49 Marking BCP49 1=B Pin Configuration 2=C 3=E 4=C - Package - SOT223 Maximum Ratings Parameter


    Original
    BCP49 EHA00009 BCP49 OT223 BCP52-16 FT1513 PDF

    ZXTN25020BFH

    Abstract: ZXTP25020BFH ZXTP25020BFHTA RBC-10K
    Text: ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to


    Original
    ZXTP25020BFH -60mV ZXTN25020BFH ZXTN25020BFH ZXTP25020BFH ZXTP25020BFHTA RBC-10K PDF

    Untitled

    Abstract: No abstract text available
    Text: FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Symbol VCBO FMMTA42 300 Unit V Collector-emitter voltage VCEO 300 V Emitter-base voltage


    Original
    FMMTA42 FMMTA92 PDF

    ZXTN25020BFH

    Abstract: ZXTP25020BFH ZXTP25020BFHTA
    Text: ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to


    Original
    ZXTP25020BFH -60mV ZXTN25020BFH ZXTN25020BFH ZXTP25020BFH ZXTP25020BFHTA PDF