MRF141G
Abstract: TOROIDS Design Considerations arco 403 arco 406 how to build vhf tv transmitter CO-AX mosfet HF amplifier motorola AN211A MRF141G data sheet AN211A
Text: MOTOROLA Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF141G/D
MRF141G
MRF141G/D*
MRF141G
TOROIDS Design Considerations
arco 403
arco 406
how to build vhf tv transmitter
CO-AX
mosfet HF amplifier
motorola AN211A
MRF141G data sheet
AN211A
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MSK5044RH
Abstract: No abstract text available
Text: M.S. KENNEDY CORPORATION 4707 DEY ROAD LIVERPOOL, NY 13088 PHONE: 315 701-6751 | FAX: (315) 701-6752 http://www.mskennedy.com/ MSK Web Site: Application Note 014 MSK5044RH Evaluation Board User's Guide By Bob Abel & Paul Musil, MS Kennedy Corp.; Revised 9/19/2013
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MSK5044RH
5044RH
AN014
MSK5044RHD
TAZH476K020L
CWR29JC476K)
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Untitled
Abstract: No abstract text available
Text: Thin-Film Cascadable Amplifier 10 to 150 MHz Technical Data UTO/UTC 104 Series Features Description Pin Configuration • Frequency Range: 10 to 150 MHz UTO—TO-8T • High Efficiency or Battery Powered Systems The 104 Series is a single-stage, high-gain silicon bipolar amplifier
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Untitled
Abstract: No abstract text available
Text: H Avantek Products Thin-Film Cascadable Amplifier 10 to 150 MHz Technical Data UTO/UTC 104 Series Features Description Pin Configuration • Frequency Range: 10 to 150␣MHz UTO—TO-8T • High Efficiency or Battery Powered Systems The 104 Series is a single-stage,
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150MHz
5963-2480E
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ADL5534
Abstract: 1008CS-471XJLC AD9640 ADL5531 ADL5534ACPZ-R7 AN-772 MO-220-VHHB ADT2-1T-1P
Text: 20 MHz to 500 MHz Dual IF Amplifier ADL5534 13 RFOUT1 15 NC 14 NC 16 RFIN1 FUNCTIONAL BLOCK DIAGRAM 12 CLIN1 NC 1 NC 3 BIAS ADL5534 BIAS 11 NC 10 NC 9 NC RFOUT2 8 CLIN2 7 NC 4 NC = NO CONNECT 06836-001 NC 2 RFIN2 5 Fixed gain of 20 dB Operation up to 500 MHz
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ADL5534
ADL5534
MO-220-VHHB
16-Lead
CP-16-6
ADL5534ACPZ-R7
ADL5534ACPZ-R21
ADL5534-EVALZ1
1008CS-471XJLC
AD9640
ADL5531
AN-772
MO-220-VHHB
ADT2-1T-1P
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF141G
floatMRF141G
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Untitled
Abstract: No abstract text available
Text: 20 MHz to 500 MHz Dual IF Amplifier ADL5534 13 RFOUT1 15 NC 14 NC 16 RFIN1 FUNCTIONAL BLOCK DIAGRAM 12 CLIN1 NC 1 BIAS NC 2 BIAS 11 NC 10 NC 9 NC RFOUT2 8 CLIN2 7 NC 4 NC = NO CONNECT 06836-001 NC 3 ADL5534 RFIN2 5 Fixed gain of 20 dB Operation up to 500 MHz
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ADL5534
ADL5534
MO-220-VHHB
16-Lead
CP-16-6
ADL5534ACPZ-R7
ADL5534ACPZ-R21
ADL5534-EVALZ1
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LTC5541
Abstract: ENB 401 LT5554 LTC5593 LTC5590 LTC5540 LT5578 LTC5542 LTC5543 LTC5583
Text: LTC5591 Dual 1.3GHz to 2.3GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.5dB at 1950MHz IIP3: 26.2dBm at 1950MHz Noise Figure: 9.9dB at 1950MHz 15.5dB NF Under 5dBm Blocking High Input P1dB 47dB Channel-to-Channel Isolation
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LTC5591
1950MHz
800mW
600MHz
LTC5583
40MHz
LTC2285
LTC5541
ENB 401
LT5554
LTC5593
LTC5590
LTC5540
LT5578
LTC5542
LTC5543
LTC5583
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LTC5590
Abstract: LTC5591 LTC5592 LTC5593 LTC5541 GSM1800 LTC5591IUH N4000-13 j364 LTE bandpass filter
Text: LTC5591 Dual 1.3GHz to 2.3GHz High Dynamic Range Downconverting Mixer Description Features n n n n n n n n n n n n n n Conversion Gain: 8.5dB at 1950MHz IIP3: 26.2dBm at 1950MHz Noise Figure: 9.9dB at 1950MHz 15.5dB NF Under 5dBm Blocking High Input P1dB 47dB Channel-to-Channel Isolation
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LTC5591
1950MHz
800mW
600MHz
LTC5583
40MHz
LTC2285
LTC5590
LTC5591
LTC5592
LTC5593
LTC5541
GSM1800
LTC5591IUH
N4000-13
j364
LTE bandpass filter
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Untitled
Abstract: No abstract text available
Text: 20 MHz to 500 MHz Dual IF Amplifier ADL5534 Data Sheet 13 RFOUT1 15 NC 16 RFIN1 12 CLIN1 NC 1 BIAS NC 2 NC 3 ADL5534 BIAS 11 NC 10 NC 9 NC RFOUT2 8 CLIN2 7 NC 6 RFIN2 5 NC 4 NC = NO CONNECT 06836-001 Fixed gain of 20 dB Operation up to 500 MHz Input/output internally matched to 50 Ω
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ADL5534
ADL5534
6-10-2011-A
MO-220-WHHB.
16-Lead
CP-16-31
ADL5534ACPZ-R7
ADL5534-EVALZ
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Untitled
Abstract: No abstract text available
Text: 20 MHz to 500 MHz Dual IF Amplifier ADL5534 Data Sheet 13 RFOUT1 15 NC 16 RFIN1 12 CLIN1 NC 1 BIAS NC 2 NC 3 ADL5534 BIAS 11 NC 10 NC 9 NC RFOUT2 8 CLIN2 7 NC 6 RFIN2 5 NC 4 NC = NO CONNECT 06836-001 Fixed gain of 20 dB Operation up to 500 MHz Input/output internally matched to 50 Ω
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ADL5534
ADL5534
5-09-2012-A
MO-220-VGGC
16-Lead
CP-16-6
ADL5534ACPZ-R7
ADL5534-EVALZ
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Untitled
Abstract: No abstract text available
Text: 500 MHz to 1700 MHz Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun ADL5357 FUNCTIONAL BLOCK DIAGRAM FEATURES APPLICATIONS Cellular base station receivers Transmit observation receivers Radio link downconverters IFGM IFOP IFON PWDN LEXT 20 19 18 17 16
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ADL5357
CP-20-5)
ADL5357ACPZ-R7
ADL5357ACPZ-WP1
ADL5357-EVALZ1
20-Lead
CP-20-5
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Untitled
Abstract: No abstract text available
Text: 500 MHz to 1700 MHz Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun ADL5357 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Cellular base station receivers Transmit observation receivers Radio link downconverters IFGM IFOP IFON PWDN LEXT 20
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ADL5357
20-lead
HBM/500
MO-220-WHHC.
11908-A
CP-20-9)
ADL5357ACPZ-R7
ADL5357-EVALZ
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RO3003
Abstract: ADL5357ACPZ-R7
Text: 500 MHz to 1700 MHz Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun ADL5357 FEATURES APPLICATIONS Cellular base station receivers Transmit observation receivers Radio link downconverters FUNCTIONAL BLOCK DIAGRAM IFGM IFOP IFON PWDN LEXT 20 19 18 17 16
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ADL5357
CP-20-5)
ADL5357ACPZ-R7
ADL5357ACPZ-WP1
ADL5357-EVALZ1
20-Lead
CP-20-5
RO3003
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MRF141G
Abstract: u 172 954 zener AN211A
Text: Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF141G/D
MRF141G
MRF141G
u 172
954 zener
AN211A
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arco 403
Abstract: MRF141G MRF141G data sheet AN211A Nippon capacitors
Text: MOTOROLA Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF141G/D
MRF141G
arco 403
MRF141G
MRF141G data sheet
AN211A
Nippon capacitors
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315PV
Abstract: 68314 370-PH
Text: MODEL: EVEREST / NETPHY-1 LT 17M T Page 1 of 7 ELECTRO MA GNETIC TEST\ INC. 1547 P ly m o u th Street, M o u n tain V iew , C A 94043 Tel: 650 9 6 5 -4 0 0 0 Fax: (650) 9 6 5 -3 0 0 0 REPORT NO.: DATE: IA O IT I IX -I FCC PART 68 (PARTIAL TESTING) MEASUREMENT FORMS
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81130a7
315PV
68314
370-PH
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application MOSFET transmitters fm
Abstract: TOROIDS Design Considerations mrf141g
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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arco 406
Abstract: mrf141g transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF141G
MRF141G
arco 406
transistor fet N-Channel RF Amplifier
RF TOROIDS Design Considerations
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF141G
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TOROIDS Design Considerations
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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Untitled
Abstract: No abstract text available
Text: Whol HEWLETT mLUM PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 150 MHz Technical Data UTO/UTC 104 Series Features Description Pin Configuration • Frequency Range: 10 to 150 MHz UTO—TO-8T • High Efficiency or Battery Powered Systems The 104 Series is a single-stage,
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Untitled
Abstract: No abstract text available
Text: AVANTÉK INC ' M4E D H lim ih b 0007=133 3 S A V A UTO/UTC 104 Series Thin-Film Cascadable Amplifier 10 tO 150 MHz Æ R /A N T E K FEATURES APPLICATIONS • • • • • • • Low Frequency IF Stages • Medical Instruments: Ultra-Sound, Magnetic Resonance
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SU 179 transistor
Abstract: Motorola ic 1036 Nippon capacitors
Text: MOTOROLA O rder this docum ent by M RF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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RF141G/D
SU 179 transistor
Motorola ic 1036
Nippon capacitors
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