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    Harris Semiconductor IFU120

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    IFU120 Datasheets Context Search

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    ifr120

    Abstract: IFU120 IFr-120 IRFR120 IRFR120T IRFU120 TB334
    Text: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRFR120, IRFU120 TA09594. ifr120 IFU120 IFr-120 IRFR120 IRFR120T IRFU120 TB334

    IFU120

    Abstract: fu120 IFU-121 fr120 irfu121 Harris IRFR120 IRFU N-Channel Power MOSFETs a 4556
    Text: m HARRIS IR FR 120/1R F R 121 IR F U 1 2 0 /IR F U 1 2 1 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Packages Features T 0 -2 S 1 A A TOP VIEW • 8.4A, 80V and 100V • rDS on = 0 .2 7 0 3 SOURCE • Single Pulse Avalanche Energy Rated DRAIN


    OCR Scan     		PDF 120/1R O-252AA IRFR120, IRFR121, IRFU120, IRFU121 IFU120 fu120 IFU-121 fr120 Harris IRFR120 IRFU N-Channel Power MOSFETs a 4556