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    IFR-410

    Abstract: IFU410 IFR410 irfu410
    Text: IRFR410, IRFU410 S E M I C O N D U C T O R 1.5A, 500V, 7.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.5A, 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF IRFR410, IRFU410 TA17445. IFR-410 IFU410 IFR410 irfu410

    IFR410

    Abstract: IFU410 IRFU410 IFR-410 IRFR410 TB334
    Text: IRFR410, IRFU410 Data Sheet July 1999 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF IRFR410, IRFU410 TA17445. IFR410 IFU410 IRFU410 IFR-410 IRFR410 TB334

    MOSFET 4407

    Abstract: IFR410 4406 mosfet IFU410 IFR-410 MOSFET 4407 a 4404 mosfet IRFU410 4407 mosfet ADVANCED LINEAR DEVICES 4407
    Text: IRFR410, IRFU410 Data Sheet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRFR410, IRFU410 TA17445. MOSFET 4407 IFR410 4406 mosfet IFU410 IFR-410 MOSFET 4407 a 4404 mosfet IRFU410 4407 mosfet ADVANCED LINEAR DEVICES 4407

    IFU410

    Abstract: IFR410 IRFR410 IRFU410 TB334
    Text: IRFR410, IRFU410 Data Sheet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRFR410, IRFU410 TA17445. IFU410 IFR410 IRFR410 IRFU410 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRFR410, IRFU410 S e m iconductor D ata S h eet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF IRFR410, IRFU410 000i2