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    IGBT Search Results

    IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
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    IGBT Price and Stock

    Infineon Technologies AG EVALM7HVIGBTPFCINV4TOBO1

    EVAL KIT
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    DigiKey EVALM7HVIGBTPFCINV4TOBO1 Bulk 10 1
    • 1 $69.91
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    Avnet Americas EVALM7HVIGBTPFCINV4TOBO1 Box 2 1
    • 1 $77.4375
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    Mouser Electronics EVALM7HVIGBTPFCINV4TOBO1 6
    • 1 $68.75
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    Newark EVALM7HVIGBTPFCINV4TOBO1 Bulk 1
    • 1 $71.5
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    Infineon Technologies AG EVALM7HVIGBTPFCINV1TOBO1

    EVAL KIT
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    DigiKey EVALM7HVIGBTPFCINV1TOBO1 Bulk 8 1
    • 1 $69.91
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    Avnet Americas EVALM7HVIGBTPFCINV1TOBO1 Box 2 1
    • 1 $77.4375
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    Mouser Electronics EVALM7HVIGBTPFCINV1TOBO1 6
    • 1 $68.75
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    Newark EVALM7HVIGBTPFCINV1TOBO1 Bulk 1
    • 1 $71.5
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    • 100 $71.5
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    Infineon Technologies AG EVALM5IGBT7TOBO1

    EVAL BOARD FOR M5-IGBT7
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    DigiKey EVALM5IGBT7TOBO1 Bulk 3 1
    • 1 $825
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    Mouser Electronics EVALM5IGBT7TOBO1 3
    • 1 $757.97
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    Newark EVALM5IGBT7TOBO1 Bulk 2 1
    • 1 $786.9
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    Chip1Stop EVALM5IGBT7TOBO1 Bulk 1
    • 1 $718
    • 10 $718
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    Semtech Corporation SX9000IGBTT

    IC AFE CAP SENSE 256WLCSP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SX9000IGBTT Reel
    • 1 -
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    Diodes Incorporated XRP7618IGBTR-F

    VREG SHUNT REGULATOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey XRP7618IGBTR-F Reel
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    Find more IGBT price and stock on Findchips.com

    IGBT Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IGBT Designers Manual International Rectifier IGBT Designers Manual Original PDF
    IGBT Guide International Rectifier IGBT Selection Guide Original PDF

    IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGBT loss calculate

    Abstract: No abstract text available
    Text: n j] DN-57 b U N IT R O D E Design Note Power Dissipation Considerations for the UC3726N/UC3727N IGBT Driver Pair by Mickey McClure Application Engineer Motion Control Products Optimized or driving Insulated Gate Bipolar Transis­ tors (IGBTs , the UC3726N/UC3727N IGBT driver


    OCR Scan     		PDF DN-57 UC3726N/UC3727N UC3726N UC3727N UC3726/UC3727 U-143C) U-143C. 15kHz UC3726N, IGBT loss calculate

    MG100Q2YS1

    Abstract: No abstract text available
    Text: GTR MODULL SILICON N CHANNEL IGBT MG100Q2YS1 HI GH POWER S WIT C H I N G A P P L I C A T I O N S . Unit M O T O R C ONT R O L A P P L I C A T I O N S . in m m • High Input Impedance • High Speed : t f =0. 5fis Max. t r r = 0 . 5 (is ( M a x . ) •Low Saturación Voltage:


    OCR Scan     		PDF MG100Q2YS1 MG100Q2YS1

    MG400 TOSHIBA

    Abstract: No abstract text available
    Text: TOSHIBA MG400Q1US51 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT MG400 1 US51 HIGH P O W ER SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • H igh Input Impedance H ighS peed : tf= 0.3/;s Max. Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG400Q1US51 MG400 MG400 TOSHIBA

    diode E155

    Abstract: mig20j
    Text: T O SH IB A TENTATIVE MIG20J906E/EA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J906E, MIG20J906EA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.


    OCR Scan     		PDF MIG20J906E/EA MIG20J906E, MIG20J906EA MIG20J906E 2-108E5A 2-108E6A o--------Bo40- 80Ilo 961001EAA1 diode E155 mig20j

    mig10J

    Abstract: No abstract text available
    Text: TOSHIBA MIG10J855H TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10 J855H Units in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage :


    OCR Scan     		PDF MIG10J855H MIG10 J855H 0A/600V 0A/800V mig10J

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG75J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 7 5 J 1 BS1 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm • High Input Impedance • H ighSpeed • Low Saturation Voltage : VQE sat = 2.7V (Max.) (Iq = 75A)


    OCR Scan     		PDF MG75J1BS11

    MG50H2YS1

    Abstract: No abstract text available
    Text: MG50H2YS1 GTR MODULE_ SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance : tf= 1 . 0/is Max. . High Speed trr = 0 . 5 y s ( M a x .) . Enhancement-Mode . Includes a Complete Half Bridge in one


    OCR Scan     		PDF MG50H2YS1 MG50H2YS1

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE MIG50J804H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG50J804H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 3ji 50A /600V High Speed Type IGBT


    OCR Scan     		PDF MIG50J804H /600V

    mg75n2ys

    Abstract: LTA 703 S MG75N2YS1 MG75N2 MG75N2Y
    Text: MG75N2YS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in iran MOTOR CONTROL APPLICATIONS. High Input Impedance tf=l.O u s Max. High Speed trr=0-5|Js(Max. ) . Enahncement-Mode . Includes a Complete Half Bride in One Package.


    OCR Scan     		PDF MG75N2YS1 mg75n2ys LTA 703 S MG75N2YS1 MG75N2 MG75N2Y

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT2QG102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT20G102(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance « Low Saturation Voltage : V q e (sa t) = 8V (Max.) (l£ = 130A) • Enhancement-Mode •


    OCR Scan     		PDF GT2QG102 GT20G102 2-10S2C

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG200Q1US51 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG200 1 US51 H IG H P O W E R S W IT C H IN G AP PLIC A TIO N S M O T O R C O N T R O L A P P L IC A T IO N S • H ig h I n p u t Im p ed an ce • H i g h s p e e d : tf = 0 .3 /is M a x .


    OCR Scan     		PDF MG200Q1US51 MG200

    mig15j

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE M IG 1 5 J805 E TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MI G 1 5 J 8 0 5 E HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage


    OCR Scan     		PDF MIG15J805E 961001EAA1 mig15j

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG90V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG90V2YS40 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 4-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG90V2YS40 2-94C1A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE GT30J301 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm M OTOR CONTROL APPLICATIONS $3.2 ± 0.2 The 3rd Generation Enhancement-Mode High Speed : t f= 0.30/^s Max.


    OCR Scan     		PDF GT30J301

    GT50J102

    Abstract: No abstract text available
    Text: GT50J102 TOSHIBA G T 5 0 J 1 02 TO SH IBA INSU LATED GATE BIPO LAR TRANSISTOR SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • • • The 3rd. Generation. Enhancement-Mode. High Speed. : tf = 0.30/« Max.


    OCR Scan     		PDF GT50J102 961001EAA GT50J102

    GT60M101

    Abstract: No abstract text available
    Text: INSULATED GATE BIPOLAR TRANSISTOR GT60M101 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX #3.3±0.2 . High Input Impedance . High Speed : tf=0.7ns Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode 2.51 3.0


    OCR Scan     		PDF GT60M101 --15V GT60M101

    Untitled

    Abstract: No abstract text available
    Text: GT30J311 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30/iS Max. Low Saturation Voltage : VQE(say = 2.7V (Max.)


    OCR Scan     		PDF GT30J311 30/iS

    MG50J2YS1

    Abstract: IGBT MG50J2YS1
    Text: GTR MODULE SILICON N CHANNEL IGBT MG50J2YS1 HIGH PO WER S W I T C H I N G APPL I CA TI ON S . M O T O R C ON T RO L A P PL IC A TI ON S. . High Input Impedance . High Speed : t f=0.3 5 / j s Max. trr=0. 25|is(May.) . Low Saturation Voltage : VCE(sat)=4•0V(Max.)


    OCR Scan     		PDF MG50J2YS1 MG50J2YS1 IGBT MG50J2YS1

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA GT10J301 GT10J301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 1 5 .9 M A X m The 3rd Generation. Enhancement-Mode. High Speed. : tf=0.30,«s Max.


    OCR Scan     		PDF GT10J301

    P channel 50A IGBT

    Abstract: No abstract text available
    Text: TO SH IBA MIG50J101 H M I G 5 0 J 1 01 H TO SH IBA INTELLIGENT GTR M O D U LE SILICON N CHANNEL IGBT HIGH PO W E R SW ITCHING APPLICATIONS M OTO R CONTROL APPLICATIONS • Integrates Inverter & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.


    OCR Scan     		PDF MIG50J101 2-110A1A MIG50J101H P channel 50A IGBT

    gt50j

    Abstract: No abstract text available
    Text: TOSHIBA GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 5 0 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The 3rd. Generation. • Enhancement-Mode. • High Speed. 2 0.5 MAX. fi 3.3 ±0.2


    OCR Scan     		PDF GT50J102 2-21F2C gt50j

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE GT15Q311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.40/^s Max. Low Saturation Voltage : VCE (sat)^ 3 .5 V (Max.)


    OCR Scan     		PDF GT15Q311 --100A

    MP6754

    Abstract: No abstract text available
    Text: T O SH IB A MP6754 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MP6754 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage


    OCR Scan     		PDF MP6754 961001EAA2 MP6754

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG75Q2YS50 Tempe30