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    IGBT 1000V 60A Search Results

    IGBT 1000V 60A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 1000V 60A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FGA50N100BNTD2 1000 V NPT Trench IGBT Features General Description • • • • • Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and


    Original     		PDF FGA50N100BNTD2

    Untitled

    Abstract: No abstract text available
    Text: FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features General Description • High Speed Switching Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and


    Original     		PDF FGL60N100BNTD O-264

    Untitled

    Abstract: No abstract text available
    Text: FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features General Description • High Speed Switching Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and


    Original     		PDF FGL60N100BNTD O-264

    Untitled

    Abstract: No abstract text available
    Text: FGA50N100BNTD 1000 V NPT Trench IGBT General Description Features Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers


    Original     		PDF FGA50N100BNTD

    FGA50N100BNTD2

    Abstract: IGBT welder circuit
    Text: FGA50N100BNTD2 1000 V NPT Trench IGBT Features General Description • • • • • Using Fairchild 's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and


    Original     		PDF FGA50N100BNTD2 FGA50N100BNTD2 IGBT welder circuit

    4050 cmos

    Abstract: 4011 cmos 4011 c-mos ic cmos 4011 IC 4011 CMOS 4081 logic gate circuit diagram 47k ohm potentiometer Pin Diagram of ic 4081 LM311V 2N2222A npn transistor
    Text: LRGAT75F100 1000V 75A LRGAT150F100 1000V 150A ZVS THYRISTOR DUAL MODE IGBT HALF BRIDGE POWER MODULE PRODUCT DESCRIPTION The LRGAT series consists of half bridges designed to be used in Zero Voltage Switching ZVS power converters up to 80KHz operating frequency and 10KW output power.


    Original     		PDF LRGAT75F100 LRGAT150F100 80KHz 400VAC 6160xx1T2300 DIN46 F-33700 4050 cmos 4011 cmos 4011 c-mos ic cmos 4011 IC 4011 CMOS 4081 logic gate circuit diagram 47k ohm potentiometer Pin Diagram of ic 4081 LM311V 2N2222A npn transistor

    RG 2006 10A 600V

    Abstract: ups active power easy 600 igbt 1000v 10A FGA50N100BN
    Text: FGA50N100BNTD 1000 V NPT Trench IGBT General Description Features Using Fairchild 's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers


    Original     		PDF FGA50N100BNTD FGA50N100BNTD RG 2006 10A 600V ups active power easy 600 igbt 1000v 10A FGA50N100BN

    DIODE B12 51

    Abstract: TSG60N100CE IGBT 1000V .200A tsg60n100 B12 68 diode IGBT 1000V 60A
    Text: TSG60N100CE N-Channel IGBT with FRD. TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1000 ±20 60 General Description The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers


    Original     		PDF TSG60N100CE O-264 TSG60N100CE 25pcs DIODE B12 51 IGBT 1000V .200A tsg60n100 B12 68 diode IGBT 1000V 60A

    Untitled

    Abstract: No abstract text available
    Text: FGA50N100BNT tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		PDF FGA50N100BNT

    induction heater

    Abstract: FGA50N100BNT FGA50N100BNTTU fairchild induction heater low frequency induction heater igbt 1000v 10A 30 kw induction heater
    Text: FGA50N100BNT tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		PDF FGA50N100BNT 100oC induction heater FGA50N100BNT FGA50N100BNTTU fairchild induction heater low frequency induction heater igbt 1000v 10A 30 kw induction heater

    igbt 1000v 10A

    Abstract: No abstract text available
    Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		PDF FGA50N100BNTD2 FGA50N100BNTD2 igbt 1000v 10A

    igbt induction cooker

    Abstract: induction heating cooker FGA50N100BNTD2 induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater
    Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		PDF FGA50N100BNTD2 FGA50N100BNTD2 igbt induction cooker induction heating cooker induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater

    igbt induction cooker

    Abstract: FGA50N100 "induction cooker" circuit induction cooker circuit with IGBT induction heating cooker IC for induction cooker FGA50N100BNTDTU IGBT 600V 30A TO-3P IGBT 1000V 60A BNTD
    Text: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		PDF FGA50N100BNTD FGA50N100BNTD FGA50N100BNTDTU igbt induction cooker FGA50N100 "induction cooker" circuit induction cooker circuit with IGBT induction heating cooker IC for induction cooker IGBT 600V 30A TO-3P IGBT 1000V 60A BNTD

    igbt induction cooker

    Abstract: induction cooker igbt 1000v 30a induction cooker circuit with IGBT IGBT 1000V .50A induction heating cooker fairchild induction cooker igbt for induction cooker FGA50N100BNTDTU IGBT 60A
    Text: tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		PDF FGA50N100BNTD igbt induction cooker induction cooker igbt 1000v 30a induction cooker circuit with IGBT IGBT 1000V .50A induction heating cooker fairchild induction cooker igbt for induction cooker FGA50N100BNTDTU IGBT 60A

    fairchild induction cooker

    Abstract: induction cooker circuit with IGBT igbt induction cooker FGA50N100BNTD FGA50N100BNTDTU igbt 1000v 30a induction cooker IC for induction cooker FGA50N100BN
    Text: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		PDF FGA50N100BNTD FGA50N100BNTD fairchild induction cooker induction cooker circuit with IGBT igbt induction cooker FGA50N100BNTDTU igbt 1000v 30a induction cooker IC for induction cooker FGA50N100BN

    cm150dy-34a

    Abstract: diode IN 34A
    Text: MITSUBISHI IGBT MODULES CM150DY-34A HIGH POWER SWITCHING USE CM150DY-34A ¡IC . 150A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack


    Original     		PDF CM150DY-34A cm150dy-34a diode IN 34A

    CM150DY-34A

    Abstract: IGBT 60A 1700v
    Text: MITSUBISHI IGBT MODULES CM150DY-34A HIGH POWER SWITCHING USE CM150DY-34A ¡IC . 150A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack


    Original     		PDF CM150DY-34A 078K/W CM150DY-34A IGBT 60A 1700v

    CM150DU-34KA

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE CM150DU-34KA ● IC . 150A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack


    Original     		PDF CM150DU-34KA CM150DU-34KA

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM150DU-34KA ● IC . 150A ● VCES . 1700V


    Original     		PDF CM150DU-34KA

    CM150DU-34KA

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE CM150DU-34KA ● IC . 150A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack


    Original     		PDF CM150DU-34KA CM150DU-34KA

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM150DU-34KA ● IC . 150A ● VCES . 1700V


    Original     		PDF CM150DU-34KA

    541 transistor

    Abstract: LM311V
    Text: LRGAT75F100 1000V 75A ADVANCED R ow er LRGAT150F100 1000V 150A T e c h n o l o g y ZVSTHYRISTOR DUAL MODE IGBT HALF BRIDGE POWER MODULE PRODUCT DESCRIPTION The LRGAT series consists of half bridges designed to be used in Zero Voltage Switching ZVS power


    OCR Scan     		PDF LRGAT75F100 LRGAT150F100 80KHz 400VAC 6160xx1T2300 DIN46 F-33700 541 transistor LM311V

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9

    MG75J2YS40

    Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
    Text: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-109C1A MG50J6ES50 MG75J6ES50 2-94A2A MG100J6ES50 MG50Q6ES11 MIG150J201H MIG200J201H MIG75Q201H MIG100Q201H MG75J2YS40 MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45