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    IGBT 10N120 Search Results

    IGBT 10N120 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TRS10N120HB Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 1200 V, 10 A, 2 in 1, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 10N120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


    Original     		O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 PDF

    10n120bnd

    Abstract: mosfet 10N120bnd 10N120 TRANSISTOR 10N120BND emerson 10n120bnd TA49290 12V 200A Relay HGTG10N120BND LD26 TA49189
    Text: HGTG10N120BND Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		HGTG10N120BND HGTG10N120BND TA49290. TA49189. 140ns 150oC 10n120bnd mosfet 10N120bnd 10N120 TRANSISTOR 10N120BND emerson 10n120bnd TA49290 12V 200A Relay LD26 TA49189 PDF

    10N120BN

    Abstract: G10N120BN 35A, 1200V, NPT Series N-Channel IGBT spice model TA49290 HGTG10N120BN HGTP10N120BN TB334 HGT1S10N120BNS HGT1S10N120BNS9A 10n120
    Text: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS 10N120BN G10N120BN 35A, 1200V, NPT Series N-Channel IGBT spice model TA49290 HGTG10N120BN TB334 HGT1S10N120BNS9A 10n120 PDF

    10N120BN

    Abstract: G10N120 10N120 TA49290 G10N120BN N-channel MOSFET 800v to-247 G10N G10N120b N-channel MOSFET to-247 HGT1S10N120BNS
    Text: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS 10N120BN G10N120 10N120 TA49290 G10N120BN N-channel MOSFET 800v to-247 G10N G10N120b N-channel MOSFET to-247 PDF

    HGTG10N120BND

    Abstract: 10n120bnd mosfet 10N120bnd 10N120 TRANSISTOR 10N120BND 10N120BN TA49302 TA49189 10n120bnd datasheet ge 047 TRANSISTOR
    Text: HGTG10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		HGTG10N120BND HGTG10N120BND TA49290. TA49189. 140ns 150oC 10n120bnd mosfet 10N120bnd 10N120 TRANSISTOR 10N120BND 10N120BN TA49302 TA49189 10n120bnd datasheet ge 047 TRANSISTOR PDF

    10n120bnd

    Abstract: 10N120 mosfet 10N120bnd 10n120bnd datasheet TA49290 HGTG10N120BND TA49290 diode TA49302 TRANSISTOR 10N120BND ge 047 TRANSISTOR
    Text: HGTG10N120BND Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		HGTG10N120BND HGTG10N120BND TA49290. TA49189. 140ns 150oC 10n120bnd 10N120 mosfet 10N120bnd 10n120bnd datasheet TA49290 TA49290 diode TA49302 TRANSISTOR 10N120BND ge 047 TRANSISTOR PDF

    G10N120b

    Abstract: 10N120 G10N120
    Text: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS G10N120b 10N120 G10N120 PDF

    10N120BND

    Abstract: No abstract text available
    Text: HGTG10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		HGTG10N120BND HGTG10N120BND TA49290. TA49189. 140ns 150oC 10N120BND PDF

    10N120BN

    Abstract: G10N120BN 10N120 TA49290 HGT1S10N120BNS HGT1S10N120BNS9A HGTG10N120BN HGTP10N120BN TB334 T0263AB
    Text: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS 10N120BN G10N120BN 10N120 TA49290 HGT1S10N120BNS9A HGTG10N120BN TB334 T0263AB PDF

    HGT1S10N120BNS

    Abstract: 10N120 10N120BN G10N120B TA49290 G10N120 HGTP10N120BN TB334 G10N120BN HGT1S10N120BNST
    Text: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS 10N120 10N120BN G10N120B TA49290 G10N120 TB334 G10N120BN HGT1S10N120BNST PDF

    10N120BND

    Abstract: 10n120bnd equivalent
    Text: HGTG10N120BND Semiconductor J an u ary 1999 D ata S h eet 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Ih ro u g h IGBT design. This is a new mem ber of the MOS gated high voltage switching IGBT family. IGBTs com bine the best


    OCR Scan     		HGTG10N120BND HGTG10N120BND TA49290. TA49189. 140ns 1-800-4-HARRIS 10N120BND 10n120bnd equivalent PDF

    10N120BND

    Abstract: mosfet 10N120bnd TRANSISTOR 10N120BND IC IGBT 10N120BND 10n120bnd equivalent TA49290 diode TA49290 ta49302 SEM 238
    Text: HGTG10N120BND Semiconductor D a ta S h e e t J a n u a ry 1999 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Ih ro u g h IGBT design. This is a new mem ber of the MOS gated high voltage switching IGBT family. IGBTs com bine the best


    OCR Scan     		HGTG10N120BND HGTG10N120BND TA49290. TA49189. 1-800-4-HARRIS 10N120BND mosfet 10N120bnd TRANSISTOR 10N120BND IC IGBT 10N120BND 10n120bnd equivalent TA49290 diode TA49290 ta49302 SEM 238 PDF

    10N120BN

    Abstract: No abstract text available
    Text: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Semiconductor Data Sheet January 1999 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high


    OCR Scan     		HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS O-263AB 10N120BN, 10N120BN PDF

    10N120BN

    Abstract: G10N120BN ta49290 T0263AB
    Text: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS S em iconductor January 1999 Data Sheet 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high


    OCR Scan     		HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS O-263AB 10N120BN, 10N120BN G10N120BN ta49290 T0263AB PDF

    10N120AU1

    Abstract: 10n120
    Text: PIXYS IGBT with Diode IXSH 10N120AU1 U = 2 0 A VCES = 1200 V VCE sa„ = 4.0 V Short Circuit SOA Capability Symbol Test C onditions VCES V *C G R ^ = 25°C to 150°C T,J = 25°C to 150°C; FL.= 1 Mi2 C3E v v GEH Continuous T ransient ^C90 'c Tc = 25°C Tc = 90°C


    OCR Scan     		10N120AU1 -100/ps; 00A/MS 10N120AU1 10n120 PDF

    40N60A

    Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
    Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A


    OCR Scan     		2N100 30N60 40N60 25N100 45N100 45N120 2N100A 10N60A 24N60A 30N6QA 40N60A G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT with Diode IXSH 10N120AU1 SCSOA Capability Sym bol T e st C o n d itio n s v CES v CGR T = 25oCto150°C TJ = 25°C to 150°C; RGE= 1 MQ v v GEM Continuous T ransient ^C25 ^C90 *CM Tc = 25°C Tc = 90°C Tc = 25°C, 1 ms SSOA RBSOA VGE = 15 V, Tj= 125°C, Hg= 150 O


    OCR Scan     		10N120AU1 O-247 25oCto150 -100/ps; PDF

    B1116

    Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
    Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40


    OCR Scan     		O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1 PDF

    b14 smd diode

    Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60
    Text: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60


    OCR Scan     		T0-220 O-263 O-247 O-247 T0-204 24N60 30N60 40N60 25N100 45N100 b14 smd diode B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT IXSH10N120A IC25 v C ES V CE sat SCSO A Capability Maximum Ratings Symbol Test Conditions VCES VcO R Tj = 25“C to 150°C Tj = 25°C to 150°C; R aE = 1 MQ V v GEM Continuous Transient 'e» T c = 25°C T c = 90°C Tc = 25“C, 1 ms SSOA (RBSOA) V GE = 15 V, Tj= 125°C, Rq = 150 i l


    OCR Scan     		IXSH10N120A O-247 PDF

    10n120

    Abstract: 25n120 IGBT DRIVER SCHEMATIC IC IGBT 25N120 gate driver igbt 10N120 25N120 IC IGBT 15N120 15N120 IC IGBT 25N120 600VIc 25A120
    Text: MOTOROLA Order this document by MHPM6B10N120/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES Integrated Power Stage for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp


    Original     		MHPM6B10N120/D MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 10n120 25n120 IGBT DRIVER SCHEMATIC IC IGBT 25N120 gate driver igbt 10N120 25N120 IC IGBT 15N120 15N120 IC IGBT 25N120 600VIc 25A120 PDF

    15n120

    Abstract: IC IGBT 15N120 10n120 25n120 IGBT DRIVER SCHEMATIC 25N120 igbt 10N120 motorola 422-9 IC IGBT 25N120 Q1/LT 9249 APPLICATION NOTE OF 15N120
    Text: MOTOROLA Order this document by MHPM6B10N120/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES Integrated Power Stage for 460 VAC Motor Drives These E–POWER modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0


    Original     		MHPM6B10N120/D MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 15n120 IC IGBT 15N120 10n120 25n120 IGBT DRIVER SCHEMATIC 25N120 igbt 10N120 motorola 422-9 IC IGBT 25N120 Q1/LT 9249 APPLICATION NOTE OF 15N120 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF