MIMMG150D120B6UN
Abstract: No abstract text available
Text: MIMMG150D120B6UN 1200V 150A IGBT Module RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP 1200V NPT technology □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current
|
Original
|
PDF
|
MIMMG150D120B6UN
Figure10.
Figure11.
Figure12.
MIMMG150D120B6UN
|
QIQ1245001
Abstract: No abstract text available
Text: QIQ1245001 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper IGBT Module 1200V 450A IGBT / 1200V 750A Fast Diode Description: Powerex Low Side Chopper IGBT Module is designed specially for customer applications. The modules are isolated for easy mounting
|
Original
|
PDF
|
QIQ1245001
QIQ1245001
|
Untitled
Abstract: No abstract text available
Text: SIGC223T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC223T120R2CL 1200V 150A C This chip is used for: • IGBT-Modules
|
Original
|
PDF
|
SIGC223T120R2CL
BSM150GB120DLC
Q67050-A4286sawn
7121-P,
|
7121
Abstract: BSM150GB120DLC SIGC223T120R2CL
Text: SIGC223T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC223T120R2CL 1200V 150A C This chip is used for: • IGBT-Modules
|
Original
|
PDF
|
SIGC223T120R2CL
SIGC223T120R2CL
BSM150GB120DLC
Q67050-A4286A101
7121-P,
7121
BSM150GB120DLC
|
7121
Abstract: BSM150GB120DLC SIGC223T120R2CL
Text: SIGC223T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC223T120R2CL 1200V 150A C This chip is used for: • IGBT-Modules
|
Original
|
PDF
|
SIGC223T120R2CL
SIGC223T120R2CL
BSM150GB120DLC
Q67041-A4687A003
7121-P,
7121
BSM150GB120DLC
|
Untitled
Abstract: No abstract text available
Text: SIGC223T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC223T120R2CL 1200V 150A C This chip is used for: • IGBT-Modules
|
Original
|
PDF
|
SIGC223T120R2CL
SIGC223T120R2CL
BSM150GB120DLC
Q67050-A4286A101
7121-P,
|
7078
Abstract: APT100DQ120 APT150GT120JR
Text: APT150GT120JR 1200V, 150A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
|
Original
|
PDF
|
APT150GT120JR
50KHz
E145592
7078
APT100DQ120
APT150GT120JR
|
Untitled
Abstract: No abstract text available
Text: APT150GT120JR 1200V, 150A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
|
Original
|
PDF
|
APT150GT120JR
50KHz
E145592
|
Untitled
Abstract: No abstract text available
Text: APT150GT120JR 1200V, 150A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
|
Original
|
PDF
|
APT150GT120JR
50KHz
E145592
fo227
|
4MBI300VG-120R-50
Abstract: 4MBI300VG120 4MBI300 chip Express t2 4mbi300vg 4MBI300VG-120 igbt 600V 300A
Text: / 4MBI300VG-120R-50 IGBT Modules IGBT MODULE V series 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure
|
Original
|
PDF
|
4MBI300VG-120R-50
4MBI300VG-120R-50
4MBI300VG120
4MBI300
chip Express t2
4mbi300vg
4MBI300VG-120
igbt 600V 300A
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM150DX-24A HIGH POWER SWITCHING USE CM150DX-24A ¡IC . 150A ¡VCES . 1200V ¡Dual ¡Flatbase Type / Insulated Package /
|
Original
|
PDF
|
CM150DX-24A
|
CM150DX-24A
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM150DX-24A HIGH POWER SWITCHING USE CM150DX-24A ¡IC . 150A ¡VCES . 1200V ¡Dual ¡Flatbase Type / Insulated Package /
|
Original
|
PDF
|
CM150DX-24A
13K/W
23K/W
CM150DX-24A
|
Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DF75R12W1H4F_B11 J VCES = 1200V IC nom = 75A / ICRM = 150A TypischeAnwendungen • SolarAnwendungen TypicalApplications • SolarApplications ElektrischeEigenschaften • NiedrigeSchaltverluste
|
Original
|
PDF
|
DF75R12W1H4F
|
MIG150Q6CMA0X
Abstract: No abstract text available
Text: MIG150Q6CMA0X TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG150Q6CMA0X 1200V/150A 6in1 High Power Switching Applications Motor Control Applications Integrates inverter, power circuits & control circuits (IGBT drive units, protection units for short-current,
|
Original
|
PDF
|
MIG150Q6CMA0X
MIG150Q6CMA0X
200V/150A
2-123A1A
|
|
|
SIGC158T120R3
Abstract: No abstract text available
Text: Preliminary SIGC158T120R3 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC158T120R3 VCE ICn 1200V 150A This chip is used for:
|
Original
|
PDF
|
SIGC158T120R3
Q67050A4109-A001
691-A,
SIGC158T120R3
|
Untitled
Abstract: No abstract text available
Text: SIGC223T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC223T120R2CS 1200V 150A
|
Original
|
PDF
|
SIGC223T120R2CS
SIGC223T120R2CS
7121T,
|
300A 1200V SCR
Abstract: igbt full h bridge MSK4852 scr inverter schematic circuit
Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 1200V/150A THREE PHASE BRIDGE PEM WITH BRAKE 4707 Dey Road Liverpool, N.Y. 13088 4852 315 701-6751 FEATURES: Full Three Phase Bridge Configuration with SCR/IGBT Brake 1200V Rated Voltage 150A Continuous Output Current
|
Original
|
PDF
|
MIL-PRF-38534
200V/150A
MSK4852
300A 1200V SCR
igbt full h bridge
scr inverter schematic circuit
|
SIGC158T120R3
Abstract: No abstract text available
Text: Preliminary SIGC158T120R3 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC158T120R3 VCE ICn 1200V 150A This chip is used for:
|
Original
|
PDF
|
SIGC158T120R3
Q67050A4109-A001
L7691A,
SIGC158T120R3
|
L7691A
Abstract: No abstract text available
Text: Preliminary SIGC158T120R3 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC158T120R3 VCE ICn 1200V 150A This chip is used for:
|
Original
|
PDF
|
SIGC158T120R3
Q67050sawn
A4109-A001
L7691A,
L7691A
|
MSK4852
Abstract: No abstract text available
Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. 1200V/150A THREE PHASE BRIDGE PEM WITH BRAKE 4852 FEATURES: Full Three Phase Bridge Configuration with SCR/IGBT Brake 1200V Rated Voltage 150A Continuous Output Current Internal Zener Clamps on Gates
|
Original
|
PDF
|
MIL-PRF-38534
200V/150A
MSK4852
|
G27N120BN
Abstract: HGTG27N120BN G27N120 EM- 534 motor
Text: HGTG27N120BN 56A, 1200V, NPT Series N-Channel IGBT Features Description • 56A, 1200V, T C = 25°C The HGTG27N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of
|
OCR Scan
|
PDF
|
HGTG27N120BN
140ns
HGTG27N120BN
G27N120BN
G27N120
EM- 534 motor
|
ui02
Abstract: mig10Q vero GK 60
Text: TOSHIBA MIG10Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 30 10A/1200V IGBT
|
OCR Scan
|
PDF
|
MIG10Q805H
0A/1200V
/l600V
961001EAA1
ui02
mig10Q
vero GK 60
|
P channel 600v 20a IGBT
Abstract: MIG10Q805H
Text: MIG10Q805H TOSHIBA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 30 10A/ 1200V IGBT
|
OCR Scan
|
PDF
|
MIG10Q805H
5A/1600V
2-81B1A
961001EAA1
P channel 600v 20a IGBT
MIG10Q805H
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MIG5Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG5Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage : 30 5A/1200V IGBT •
|
OCR Scan
|
PDF
|
MIG5Q805H
A/1200V
/l600V
961001EA
|
