Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYH40N120B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR
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IC110
IXYH40N120B3D1
183ns
O-247
IF110
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYJ20N120C3D1 (Electrically Isolated Tab) = = ≤ = 1200V 7A 4.0V 108ns High-Speed IGBT for 20-50 kHz Switching ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings
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IC110
IXYJ20N120C3D1
108ns
O-247TM
E153432
IF110
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH40N120B3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR
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Original
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IXYH40N120B3D1
IC110
183ns
O-247
IF110
062in.
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PDF
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Untitled
Abstract: No abstract text available
Text: July, 2007 FGA25N120ANTD/FGA25N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description • • Low saturation voltage: VCE sat , typ = 2.0V @ IC = 25A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction
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FGA25N120ANTD/FGA25N120ANTD
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PDF
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Untitled
Abstract: No abstract text available
Text: APT40GR120B2DU30 APT40GR120B2DU30 1200V, 40A, VCE on = 2.5V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode The Ultra Fast 1200V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between
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APT40GR120B2DU30
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PDF
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QR30
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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Original
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IXYH40N120C3D1
O-247
IF110
062in.
QR30
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PDF
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IXYH40N120C3
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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Original
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IXYH40N120C3D1
O-247
IF110
062in.
IXYH40N120C3
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PDF
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Ultra fast diode
Abstract: No abstract text available
Text: Advance Technical Information IXYH20N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH20N120C3D1
IC110
108ns
O-247
IF110
062in.
Ultra fast diode
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXYH40N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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Original
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IXYH40N120C3D1
O-247
IF110
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYH20N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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Original
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IC110
IXYH20N120C3D1
108ns
O-247
IF110
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH40N120B3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYH40N120B3
IC110
183ns
O-247
062in.
40N120B3
A-C91)
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N120B3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.7V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYH40N120B3
IC110
183ns
O-247
062in.
40N120B3
A-C91)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYH40N120B3 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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Original
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IC110
IXYH40N120B3
183ns
O-247
40N120B3
A-C91)
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N120B3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.7V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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Original
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IXYH40N120B3D1
IC110
183ns
O-247
IF110
062in.
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PDF
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Untitled
Abstract: No abstract text available
Text: IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXYH40N120C3D1
O-247
IF110
13/1030A,
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYH40N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IC110
IXYH40N120C3
O-247
40N120C3
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PDF
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IXYH40N120C3
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IXYH40N120C3
IC110
O-247
062in.
40N120C3
IXYH40N120C3
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PDF
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Untitled
Abstract: No abstract text available
Text: 1200V XPTTM IGBT GenX3TM w/ Diode IXYT20N120C3D1HV High-Speed IGBT for 20-50 kHz Switching VCES = IC110 = VCE sat tfi(typ) = 1200V 17A 3.4V 108ns TO-268HV Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
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IXYT20N120C3D1HV
IC110
108ns
O-268HV
IF110
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Untitled
Abstract: No abstract text available
Text: IXYH40N120B3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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Original
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IXYH40N120B3D1
IC110
183ns
O-247
IF110
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH40N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IXYH40N120C3
IC110
O-247
40N120C3
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PDF
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IXYH20N120C3D1
Abstract: No abstract text available
Text: IXYH20N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 17A 3.4V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
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IXYH20N120C3D1
IC110
108ns
O-247
IF110
IXYH20N120C3D1
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PDF
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fga20s120m
Abstract: 600v 20a IGBT 1200v 20a IGBT DIODE GE 20a igbt 20A 1200v 12v igbt 20a
Text: FGA20S120M tm 1200V, 20A ShortedAnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and ShortedAnode technology, Fairchild’s 1200V ShortedAnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This
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FGA20S120M
fga20s120m
600v 20a IGBT
1200v 20a IGBT
DIODE GE 20a
igbt 20A 1200v
12v igbt 20a
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PDF
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FGA20N120
Abstract: FGA20N120FTDTU 1200v 20a IGBT 600v 20a IGBT igbt 1200V 20A FGA20N120FTD igbt 20A 1200v 12v igbt 20a
Text: FGA20N120FTD tm 1200V, 20A Trench IGBT Features • Field stop trench technology General Description • High speed switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche
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FGA20N120FTD
FGA20N120FTD
FGA20N120
FGA20N120FTDTU
1200v 20a IGBT
600v 20a IGBT
igbt 1200V 20A
igbt 20A 1200v
12v igbt 20a
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PDF
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IXYP20N120C3
Abstract: No abstract text available
Text: Advance Technical Information IXYP20N120C3 IXYH20N120C3 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYP20N120C3
IXYH20N120C3
IC110
O-220
108ns
O-247
20N120C3
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PDF
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