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    IGBT 1200V 8A Search Results

    IGBT 1200V 8A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 1200V 8A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SIGC12T120

    Abstract: ic 2028
    Text: Preliminary SIGC12T120 3 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120 VCE ICn 1200V 8A This chip is used for: • power module


    Original     		PDF SIGC12T120 Q67050A4102-A001 L7621A, SIGC12T120 ic 2028

    SIGC12T120L

    Abstract: infineon igbt die 1200V
    Text: SIGC12T120L 3 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120L VCE ICn 1200V 8A This chip is used for:


    Original     		PDF SIGC12T120L Q67050A4269-A101 L7621B, SIGC12T120L infineon igbt die 1200V

    SIGC12T120

    Abstract: infineon igbt die 1200V
    Text: SIGC12T120 3 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120 VCE ICn 1200V 8A This chip is used for: • power module


    Original     		PDF SIGC12T120 Q67050A4102-A001 L7621A, SIGC12T120 infineon igbt die 1200V

    SIGC12T120L

    Abstract: No abstract text available
    Text: SIGC12T120L 3 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120L VCE ICn 1200V 8A This chip is used for:


    Original     		PDF SIGC12T120L Q67050A4269-A101 L7621B, SIGC12T120L

    SIGC12T120

    Abstract: No abstract text available
    Text: SIGC12T120 3 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120 VCE ICn 1200V 8A This chip is used for: • power module


    Original     		PDF SIGC12T120 Q67050A4102-A001 L7621A, SIGC12T120

    Untitled

    Abstract: No abstract text available
    Text: SIGC12T120L 3 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120L VCE ICn 1200V 8A This chip is used for:


    Original     		PDF SIGC12T120L Q67050A4269-A101 1200the L7621B,

    SIGC12T120

    Abstract: No abstract text available
    Text: Preliminary SIGC12T120 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120 VCE ICn 1200V 8A This chip is used for: • power module


    Original     		PDF SIGC12T120 Q67050A4102-A001 621-A, SIGC12T120

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC12T120 3 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120 VCE ICn 1200V 8A This chip is used for: • power module


    Original     		PDF SIGC12T120 Q67050sawn A4102-A001 1200pes L7621A,

    SIGC12T120L

    Abstract: No abstract text available
    Text: Preliminary SIGC12T120L 3 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120L VCE ICn 1200V 8A This chip is used for:


    Original     		PDF SIGC12T120L Q67050sawn A4204-A101 L7621B, SIGC12T120L

    A003

    Abstract: SIGC16T120CL
    Text: Preliminary SIGC16T120CL IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CL 1200V This chip is used for: • chip only


    Original     		PDF SIGC16T120CL Q67041-A4703sawn 7131-P, A003 SIGC16T120CL

    SIGC16T120CL

    Abstract: No abstract text available
    Text: Preliminary SIGC16T120CL IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CL 1200V This chip is used for: • chip only


    Original     		PDF SIGC16T120CL Q67041-A4703A003 7131-P, SIGC16T120CL

    soft solder die bonding

    Abstract: igbt "sawn on foil" SMPS IC 2003 SGP07N120 SIGC16T120CS infineon igbt3 1200v
    Text: SIGC16T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CS 1200V This chip is used for: • SGP07N120 Applications:


    Original     		PDF SIGC16T120CS SGP07N120 Q67050-A4113 7131-S, soft solder die bonding igbt "sawn on foil" SMPS IC 2003 SGP07N120 SIGC16T120CS infineon igbt3 1200v

    Untitled

    Abstract: No abstract text available
    Text: SIGC16T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CS 1200V This chip is used for: • SGP07N120 Applications:


    Original     		PDF SIGC16T120CS SGP07N120 Q67050-A4113 7131-S,

    SGP07N120

    Abstract: SIGC16T120CS infineon igbt3 1200v
    Text: Preliminary SIGC16T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CS 1200V This chip is used for: • SGP07N120


    Original     		PDF SIGC16T120CS SGP07N120 Q67050-A4113 7131-S, SGP07N120 SIGC16T120CS infineon igbt3 1200v

    7131

    Abstract: No abstract text available
    Text: SIGC16T120CL IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CL 1200V This chip is used for: • chip only G Applications:


    Original     		PDF SIGC16T120CL Q67041-A4703A003 7131-P, 7131

    SIGC16T120CL

    Abstract: No abstract text available
    Text: SIGC16T120CL IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CL 1200V This chip is used for: • chip only G Applications:


    Original     		PDF SIGC16T120CL Q67041-A4703A003 7131-P, SIGC16T120CL

    311D

    Abstract: A003 SIGC16T120C bup212
    Text: Preliminary SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212


    Original     		PDF SIGC16T120C Q67041-A4673sawn 7131-M, 311D A003 SIGC16T120C bup212

    bup 311d

    Abstract: bup212 igbt to220 311D SIGC16T120C
    Text: Preliminary SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212


    Original     		PDF SIGC16T120C Q67041-A4673A003 7131-M, bup 311d bup212 igbt to220 311D SIGC16T120C

    TO220 package infineon

    Abstract: 311D SIGC16T120C BUP311D bup 311d
    Text: SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212 G Applications:


    Original     		PDF SIGC16T120C Q67041-A4673A003 7131-M, TO220 package infineon 311D SIGC16T120C BUP311D bup 311d

    Untitled

    Abstract: No abstract text available
    Text: SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212 G Applications:


    Original     		PDF SIGC16T120C Q67041-A4673A003 7131-M,

    2sd315ai

    Abstract: 2sc0108t bi-directional switch IGBT driver 2SC0435T 2SD106AI 2SD106Ai-17 2sc0108 2sc0435 CT-Concept igbt trafo drivers
    Text: AN 5946 Driving Dynex High Power IGBT modules with Concept Gate Drives Application Note AN5946-2.0 September 2009 LN26854 Author: Dinesh Chamund Introduction Dynex Semiconductor manufactures a variety of IGBT modules ranging from 1200V to 6500V and 100A to 2400A.


    Original     		PDF AN5946-2 LN26854 2sd315ai 2sc0108t bi-directional switch IGBT driver 2SC0435T 2SD106AI 2SD106Ai-17 2sc0108 2sc0435 CT-Concept igbt trafo drivers

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 1200V IGBT VCES = 1200V IC90 = 20A VCE sat ≤ 3.1V IXGA20N120B3 IXGP20N120B3 High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGA20N120B3 IXGP20N120B3 O-263 20N120B3

    IXGP20N120B3

    Abstract: IXGP20N120B IXGA20N120B3 IXGA20N120B
    Text: Preliminary Technical Information VCES = 1200V IC90 = 20A VCE sat ≤ 3.1V IXGA20N120B3 IXGP20N120B3 GenX3TM 1200V IGBT High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGA20N120B3 IXGP20N120B3 O-263 20N120B3 IXGP20N120B3 IXGP20N120B IXGA20N120B3 IXGA20N120B

    IR E78996

    Abstract: GB25RF120K
    Text: Bulletin PD - 94552 rev.A 05/03 GB25RF120K IGBT PIM MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics


    Original     		PDF GB25RF120K E78996 IR E78996 GB25RF120K