3 phase IGBT inverter
Abstract: igbt 150v 30a SMD DIODE BOOK 30N120D1 igbt 1600V 45A 40a 400v to-247 1600v 30A to247
Text: DATA BOOK BOOK 2000 1998 DATA New Products Check out the following new products for leading edge performance in Power Semiconductors: PRODUCT TYPES DESCRIPTION PART NUMBER Highest Current FETS and IGBTs in TO-247 Outline HiPerFET and IGBT switches in our PLUS247 ,
|
Original
|
O-247
PLUS247TM,
120N20
26N50,
5A/1600V
0A/600V
30-06AR)
000V/20A
3 phase IGBT inverter
igbt 150v 30a
SMD DIODE BOOK
30N120D1
igbt 1600V 45A
40a 400v to-247
1600v 30A to247
|
PDF
|
transistor 12n60c
Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design
|
Original
|
ISOPLUS247TM
ISOPLUS247TM
PLUS247TM-package
FBO16-08N
FBE22-06N1
21-05QC
22-08N
75-01F
21-08i01
transistor 12n60c
12N60c equivalent
30N120D1
13N50 equivalent
12n60c
MOSFET 1200v 30a
MOSFET 1000v 30a
30n120d
CS20-22MOF1
12N60c MOSFET
|
PDF
|
IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
|
Original
|
100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
|
PDF
|
PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly
|
Original
|
lead519
B152-H9345-G2-X-7600
PX3544
PX7510
PX3560
ICE2AS01 equivalent
PX3540
Primarion PX3540
ice3br0665j
PRIMARION px3560
ice3br4765
ICE3BR1765J
|
PDF
|
7463
Abstract: APT32GU30B T0-247
Text: APT32GU30B 300V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
|
Original
|
APT32GU30B
O-247
7463
APT32GU30B
T0-247
|
PDF
|
ic 7472
Abstract: APT32GU30K
Text: APT32GU30K APT32GU30K TYPICAL PERFORMANCE CURVES 300V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
|
Original
|
APT32GU30K
O-220
ic 7472
APT32GU30K
|
PDF
|
igbt 150v 30a
Abstract: 7464 ic datasheet 60A 150V IGBT
Text: TYPICAL PERFORMANCE CURVES APT60GU30B APT60GU30S APT60GU30B_S 300V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
|
Original
|
APT60GU30B
APT60GU30S
O-247
igbt 150v 30a
7464 ic datasheet
60A 150V IGBT
|
PDF
|
TRIACS EQUIVALENT LIST
Abstract: 440v to 12v smps power supply REG IC 48V IN 12V 10A OUT 440v ac voltage regulator 440v to 12v smps power supply 50A dimmer diagrams IGBT FKPF12N60 24v 12v 20A regulator 600V igbt dc to dc buck converter 24V 10A SMPS
Text: FS8S0765RC The FS8S0765RC is a highly integrated off-line power switch FPS for CRT monitor fly-back power supply applications. This device integrates a fully avalanche-rated SenseFET (650V minimum breakdown rating) with a
|
Original
|
FS8S0765RC
new/fs8s0765rc
FS8S0765RC
ACE1502
FAN1655
FAN2534
FAN5098
Power247TM,
TRIACS EQUIVALENT LIST
440v to 12v smps power supply
REG IC 48V IN 12V 10A OUT
440v ac voltage regulator
440v to 12v smps power supply 50A
dimmer diagrams IGBT
FKPF12N60
24v 12v 20A regulator
600V igbt dc to dc buck converter
24V 10A SMPS
|
PDF
|
smps igbt
Abstract: FFH30US30S igbt 150v 30a
Text: FGH50N3 300 V SMPS IGBT April 2013 FGH50N3 300 V SMPS IGBT General Description Features Using Fairchild 's planar technology, this IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This
|
Original
|
FGH50N3
FGH50N3
O-247
IC110
smps igbt
FFH30US30S
igbt 150v 30a
|
PDF
|
MOSFET circuit welding INVERTER
Abstract: MOSFET welding INVERTER MOSFET welding INVERTER 200A 600V igbt dc to dc buck converter 600V 30A igbt dc to dc buck converter 200v dc motor igbt dc to ac inverter by scr induction heating 600V igbt dc to dc boost converter SCR Inverter
Text: TM Global Power-Semiconductor Solution Provider A Quick Reference Guide IGBTs ● MOSFET MODULES ● IPMs ● DIP-IPMs ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES ● FAST RECOVERY AND THREE-PHASE DIODE MODULES
|
Original
|
|
PDF
|
pwm 3 phase
Abstract: igniter NJ 20 U1 W Single phase power factor correction yd8sc arc igbt range igniter igbt 150v 30a
Text: ARC LAMP POWER SUPPLIES PRODUCT DESCRIPTION & APPLICATION The YD Series are high voltage, sw itching pow er supplies design ed specifically for igniting and pow ering arc lam ps for Nd:YAG and other solid state laser systems. The YD Series is available in three
|
OCR Scan
|
|
PDF
|
GTO thyristor 1200V 50A
Abstract: scr driving circuit for dc motor MOSFET circuit welding INVERTER SCR Gate Drive 200v dc motor MOSFET welding INVERTER MOSFET welding INVERTER 200A igbt for HIGH POWER induction heating 600V igbt dc to dc buck converter SWITCHING WELDING BY MOSFET igbt circuit for induction melting
Text: POWEREX 2009:Layout 1 12/31/08 9:18 AM Page 2 Power Semiconductor Solutions 2009 Quick Reference Guide ● IGBTs ● MOSFET MODULES ● IPMs ● ● DIPIPM ● ● ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES
|
Original
|
|
PDF
|
fairchild induction heater
Abstract: SGL60N90DG3 n-channel, 75v, 80a n-channel, 75v, 60a 12v dc to 8.5v dc 60A 150V IGBT
Text: SGL60N90DG3 N-CHANNEL IGBT FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (at IC=60A) * High Input Impedance * Built in Fast Recovery Diode 1 C APPLICATIONS * Home Appliance - Induction Heater - IH JAR - Micro Wave Oven
|
Original
|
SGL60N90DG3
O-264
fairchild induction heater
SGL60N90DG3
n-channel, 75v, 80a
n-channel, 75v, 60a
12v dc to 8.5v dc
60A 150V IGBT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction
|
Original
|
FGH50N3
FGH50N3
150oC.
|
PDF
|
|
|
wg65
Abstract: IRG7IA19U
Text: PD-96356 PDP TRENCH IGBT IRG7IA19UPbF Features l l l l l Key Parameters Advanced Trench IGBT Technology Optimized for Sustain and Energy Recovery circuits in PDP applications Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency High repetitive peak current capability
|
Original
|
PD-96356
IRG7IA19UPbF
O-220AB
I840G
wg65
IRG7IA19U
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-96356 PDP TRENCH IGBT IRG7IA19UPbF Features l l l l l Key Parameters Advanced Trench IGBT Technology Optimized for Sustain and Energy Recovery circuits in PDP applications Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency High repetitive peak current capability
|
Original
|
PD-96356
IRG7IA19UPbF
O-220AB
I840G
O-220AB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-96357 PDP TRENCH IGBT IRG7PA19UPbF Features l l l l l Key Parameters Advanced Trench IGBT Technology Optimized for Sustain and Energy Recovery circuits in PDP applications Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency High repetitive peak current capability
|
Original
|
PD-96357
IRG7PA19UPbF
O-247AC
IRFPE30
O-247AC
|
PDF
|
pdp driver
Abstract: JESD22-A114
Text: PD -96273 PDP TRENCH IGBT IRG7I319UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability
|
Original
|
IRG7I319UPbF
O-220AB
O-220AB
pdp driver
JESD22-A114
|
PDF
|
6 pulse IGBT single line drawing
Abstract: No abstract text available
Text: PD-96357 PDP TRENCH IGBT IRG7PA19UPbF Features l l l l l Key Parameters Advanced Trench IGBT Technology Optimized for Sustain and Energy Recovery circuits in PDP applications Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency High repetitive peak current capability
|
Original
|
PD-96357
IRG7PA19UPbF
O-247AC
IRFPE30
O-247AC
6 pulse IGBT single line drawing
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD -96273 PDP TRENCH IGBT IRG7I319UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability
|
Original
|
IRG7I319UPbF
O-220AB
O-220AB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30
|
Original
|
12N100U1
12N100AU1
O-247AD
IXGH12N100U1
IXGH12N100AU1
|
PDF
|
IXGH12N100AU1
Abstract: IXGH12N100U1
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30
|
Original
|
12N100U1
12N100AU1
O-247AD
IXGH12N100U1
IXGH12N100AU1
IXGH12N100AU1
IXGH12N100U1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30
|
Original
|
12N100U1
12N100AU1
O-247AD
IXGH12N100U1
IXGH12N100AU1
|
PDF
|
TOP280
Abstract: 04UF
Text: PD - 97318A IRGI4090PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability
|
Original
|
7318A
IRGI4090PbF
O-220AB
TOP280
04UF
|
PDF
|
