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    IGBT 1600V 20A Search Results

    IGBT 1600V 20A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 1600V 20A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JULY 1996 ITC14407516D PRELIMINARY DATA DS4580-1.4 ITC14407516D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS 25˚C VCES 1600V IC(CONT) 75A VCE(sat) 3.3V • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed.


    Original     		PDF ITC14407516D DS4580-1

    FZ1600R12KF4

    Abstract: IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb
    Text: power . Home Products IGBT 600V the News 1200V Contact Job Offers Company Search Site Content 1600V/1700V 2500V/3300V Sixpack Power Integrated Modules In Editorials future Low Loss. Half-Bridge Packages 50A BSM 50GB60DLC 75A BSM 75GB60DLC 100A BSM 100GB60DLC


    Original     		PDF 600V/1700V 500V/3300V 50GB60DLC 75GB60DLC 100GB60DLC 150GB60DLC 200GB60DLC 300GB60DLC FZ1600R12KF4 IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage IGBT with Diode VCES = 1600V IC110 = 36A VCE sat ≤ 2.30V IXGR50N160H1 ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXGR50N160H1 ISOPLUS247TM 338B2

    IXGR50N160H1

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage IGBT with Diode IXGR50N160H1 VCES = 1600V IC110 = 36A VCE sat ≤ 2.30V ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGR50N160H1 IC110 ISOPLUS247TM 338B2 IXGR50N160H1

    D680A

    Abstract: diode 513 MUBW 30-12E6K 30-12E6K MUBW30-12E6K IXYS IGBT MUBW RTH1 THERMISTOR
    Text: MUBW 30-12E6K Converter - Brake - Inverter Module CBI1 NPT3 - IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter V RRM = 1600V IDAVM25 = 130 A I FSM = 300 A VCES = 1200 V IC25 = 19 A VCE(sat) = 2.9 V VCES = 1200 V IC25 = 29 A VCE(sat) = 2.9 V


    Original     		PDF 30-12E6K IDAVM25 E72873 D680A diode 513 MUBW 30-12E6K 30-12E6K MUBW30-12E6K IXYS IGBT MUBW RTH1 THERMISTOR

    rthjc

    Abstract: ntc 0931
    Text: MUBW 15-12A6K Converter - Brake - Inverter Module CBI1 NPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter V RRM = 1600V IDAVM25 = 130 A I FSM = 300 A VCES = 1200 V IC25 = 19 A VCE(sat) = 2.9 V VCES = 1200 V IC25 = 19 A VCE(sat) = 2.9 V Application: AC motor drives with


    Original     		PDF 15-12A6K IDAVM25 E72873 MUBW15-12A6K rthjc ntc 0931

    tyco igbt module 25A

    Abstract: 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A
    Text: Power Modules Fast Power Module Solutions Vincotech is one of the market leaders in Power Modules.Target applications include motor drives, power supplies and welding equipment.With 13 different standard housings and more than 35 standard product families, Vincotech offers a wide power range


    Original     		PDF Vincotech-012-0508 ISO9001 TS16949 tyco igbt module 25A 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A

    3 phase IGBT inverter

    Abstract: igbt 150v 30a SMD DIODE BOOK 30N120D1 igbt 1600V 45A 40a 400v to-247 1600v 30A to247
    Text: DATA BOOK BOOK 2000 1998 DATA New Products Check out the following new products for leading edge performance in Power Semiconductors: PRODUCT TYPES DESCRIPTION PART NUMBER Highest Current FETS and IGBTs in TO-247 Outline HiPerFET and IGBT switches in our PLUS247 ,


    Original     		PDF O-247 PLUS247TM, 120N20 26N50, 5A/1600V 0A/600V 30-06AR) 000V/20A 3 phase IGBT inverter igbt 150v 30a SMD DIODE BOOK 30N120D1 igbt 1600V 45A 40a 400v to-247 1600v 30A to247

    mosfet 1200V 40A

    Abstract: Silicon MOSFET 1000V mosfet 1500v igbt testing pnp 1000V 2A IGBT Transistor 1200V, 25A MOSFET 1200v 3a igbt 20A 1200v pnp 1200V 2A 40N160
    Text: IXBH40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications Ralph E. Locher IXYS Corporation Santa Clara, CA by Olaf Zschieschang IXYS Semiconductor GmbH Lampertheim, Germany ABSTRACT In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the


    Original     		PDF IXBH40N160 IXBH40N160, 200ns. mosfet 1200V 40A Silicon MOSFET 1000V mosfet 1500v igbt testing pnp 1000V 2A IGBT Transistor 1200V, 25A MOSFET 1200v 3a igbt 20A 1200v pnp 1200V 2A 40N160

    IXAN0016

    Abstract: pnp transistor 1000v pnp 1200V 2A snubber CIRCUITS mosfet Silicon MOSFET 1000V mosfet 1000v MOSFET 1200v 3a mosfet 1500v 35N120A mosfet 1200V 40A
    Text: IXAN0016 IXBH40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications Ralph E. Locher IXYS Corporation Santa Clara, CA by Olaf Zschieschang IXYS Semiconductor GmbH Lampertheim, Germany ABSTRACT In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the


    Original     		PDF IXAN0016 IXBH40N160 IXBH40N160, 200ns. IXAN0016 pnp transistor 1000v pnp 1200V 2A snubber CIRCUITS mosfet Silicon MOSFET 1000V mosfet 1000v MOSFET 1200v 3a mosfet 1500v 35N120A mosfet 1200V 40A

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    Emitter Turn-Off thyristor

    Abstract: dc to ac inverter by thyristor Gate Turn-off Thyristor 600V 20A thyristor 12V it 1A thyristor 1200V 5a
    Text: 7MBR10SC120 IGBT Modules PIM/Built-in converter with thyristor and brake S series 1200V / 10A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive


    Original     		PDF 7MBR10SC120 Emitter Turn-Off thyristor dc to ac inverter by thyristor Gate Turn-off Thyristor 600V 20A thyristor 12V it 1A thyristor 1200V 5a

    thyristor 12V it 1A

    Abstract: 7MBR10SC120 GW 17
    Text: 7MBR10SC120 IGBT Modules PIM/Built-in converter with thyristor and brake S series 1200V / 10A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive


    Original     		PDF 7MBR10SC120 thyristor 12V it 1A 7MBR10SC120 GW 17

    tyco igbt module 25A

    Abstract: tyco igbt module 25A 1200V tyco igbt module 15A tyco igbt module 35A V23990-P600-I19-PM p719 flowPACK tyco igbt module 35A 1200V MiniSKiiP IPM AC 126
    Text: Power Modules Standard Power Module Solutions Vincotech is one of the market leaders in Power Modules.Target applications include motor drives, power supplies and welding equipment.With 13 different standard housings and more than 35 standard product families, Vincotech offers a wide power range


    Original     		PDF Vincotech-011-0508 ISO9001 TS16949 tyco igbt module 25A tyco igbt module 25A 1200V tyco igbt module 15A tyco igbt module 35A V23990-P600-I19-PM p719 flowPACK tyco igbt module 35A 1200V MiniSKiiP IPM AC 126

    APTGF20X60BTP2

    Abstract: No abstract text available
    Text: APTGF20X60RTP2 APTGF20X60BTP2 Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module VCES = 600V IC = 20A @ Tc = 80°C Application • AC Motor control Features Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz


    Original     		PDF APTGF20X60RTP2 APTGF20X60BTP2 APTGF20X60RTP2: APTGF20X60BTP2

    IXAN0017

    Abstract: 0017 spot welder circuit diagram IXBH40N160 MOSFET 1600v 100A IXLH45N160 high frequency welder circuit diagram TC4431 application MOSFET 1200v 30a 108nC
    Text: New 1600V BIMOSFET™ Transistors Open Up New Applications IXAN0017 by Ralph E. Locher IXYS Corporation Santa Clara, CA Introduction There are many applications today using high voltage MOSFETs and IGBTs, which would benefit from a higher voltage part. Examples are


    Original     		PDF IXAN0017 IXBH40N160, IXAN0017 0017 spot welder circuit diagram IXBH40N160 MOSFET 1600v 100A IXLH45N160 high frequency welder circuit diagram TC4431 application MOSFET 1200v 30a 108nC

    h30r1602

    Abstract: H30R160 h30r1602 by H30R IHW30N160R2 PG-TO-247-3 H30R1 igbt 1000v 10A
    Text: IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting RC- IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers :


    Original     		PDF IHW30N160R2 PG-TO-247-3 h30r1602 H30R160 h30r1602 by H30R IHW30N160R2 PG-TO-247-3 H30R1 igbt 1000v 10A

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    CM10AD00-24H

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM10AD00-24H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE CM10AD00-24H ¡IC . 10A ¡VCES . 1200V ¡Insulated Type


    Original     		PDF CM10AD00-24H G-746" CM10AD00-24H

    triac mw 131 600d

    Abstract: 65n06
    Text: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717


    Original     		PDF

    H30R1602

    Abstract: igbt 1600V 20A
    Text: IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting RC- IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers :


    Original     		PDF IHW30N160R2 PG-TO-247-3 H30R1602 igbt 1600V 20A

    h30r1602

    Abstract: H30R160 h30r IHW30N160R2 h30r1602 by H30R1 "h30r1602" PG-TO-247-3 igbt 600V 30A
    Text: IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting RC- IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers :


    Original     		PDF IHW30N160R2 PG-TO-247-3 h30r1602 H30R160 h30r IHW30N160R2 h30r1602 by H30R1 "h30r1602" PG-TO-247-3 igbt 600V 30A

    h30r1602

    Abstract: IHY30N160R2 h30r160 PG-TO247HC-3
    Text: IHY30N160R2 Soft Switching Series TrenchStop Reverse Conducting RC- IGBT with monolithic body diode Features: • Powerful monolithic body diode with very low forward voltage • Body diode clamps negative voltages • Trench and fieldstop technology offers:


    Original     		PDF IHY30N160R2 O-247HC h30r1602 IHY30N160R2 h30r160 PG-TO247HC-3

    ED 115G

    Abstract: P channel 1200v 25a IGBT MIG25Q804H
    Text: TOSHIBA TENTATIVE MIG25Q804H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG25Q804H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage


    OCR Scan     		PDF MIG25Q804H 5A/1200V 0A/1600V 9610Q1EAA1 --10V ED 115G P channel 1200v 25a IGBT MIG25Q804H