40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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APT8GT60KR
Abstract: No abstract text available
Text: APT8GT60KR 600V Thunderbolt IGBT TO-220 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT8GT60KR
O-220
150KHz
APT8GT60KR
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3b0565
Abstract: KIT_XC2785X_SK TC1167
Text: Microcontroller Board Name 6ED100HP2-FA Products Description Order No. 1ED020I12-FA Driver board for HybridPACK 2 IGBT modules, employing coreless transformer single-channel driver 1ED020I12-FA. IGBT module to be ordered seperately. SP000552868 Driver board for HybridPACK™1 IGBT modules, employing
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1ED020I12-FA
6ED100HP2-FA
1ED020I12-FA.
SP000552868
SP000521526
FS800R07A2E3)
50V/800A,
1ED020I12-FA)
SP000635950
3b0565
KIT_XC2785X_SK
TC1167
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SGH10N120RUF
Abstract: No abstract text available
Text: IGBT SGH10N120RUF Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general
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SGH10N120RUF
SGH10N120RUF
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SGP10N60RUFD
Abstract: No abstract text available
Text: IGBT SGP10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUFD series provides low conduction and switching losses as well as short circuit ruggedness. RUFD series is designed for the applications such as motor control, UPS and general
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SGP10N60RUFD
O-220
SGP10N60RUFD
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Untitled
Abstract: No abstract text available
Text: VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance 5 nH typical
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VS-GP250SA60S
E78996
OT-227
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SGH10N60RUFD
Abstract: No abstract text available
Text: IGBT SGH10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUFD series provides low conduction and switching losses as well as short circuit ruggedness. RUFD series is designed for the applications such as motor control, UPS and general
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SGH10N60RUFD
SGH10N60RUFD
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SGH10N120RUFD
Abstract: International Diode
Text: IGBT SGH10N120RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUFD series provides low conduction and switching losses as well as short circuit ruggedness. RUFD series is designed for the applications such as motor control, UPS and general
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SGH10N120RUFD
SGH10N120RUFD
International Diode
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SGW10N60RUFD
Abstract: DC SERVO MOTOR CONTROL circuit
Text: IGBT SGW10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUFD series provides low conduction and switching losses as well as short circuit ruggedness. RUFD series is designed for the applications such as motor control, UPS and general
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SGW10N60RUFD
SGW10N60RUFD
DC SERVO MOTOR CONTROL circuit
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igbt 300V 10A datasheet
Abstract: SGW10N60RUF
Text: IGBT SGW10N60RUF Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general
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SGW10N60RUF
igbt 300V 10A datasheet
SGW10N60RUF
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2n60p
Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond
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IXFR48N60P
18N60P
30N60P
22N60P
36N60P
26N60P
48N60P
PLUS220
IXTV22N50PS.
2n60p
gsm based speed control of single phase induction motor
thyristor family
48N60
600v 20 amp mosfet
14n60
300V HiPerFET power MOSFET single die MOSFET
Wireless A.C motor speed controlling system
IXYS SCR MODULE Gate Drive
15N60P
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igbt 300V 10A datasheet
Abstract: SGP10N60RUF
Text: IGBT SGP10N60RUF Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general
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SGP10N60RUF
O-220
igbt 300V 10A datasheet
SGP10N60RUF
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5A IGBT
Abstract: igbt 300V 10A datasheet SGH10N60RUF
Text: IGBT SGH10N60RUF Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general
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SGH10N60RUF
5A IGBT
igbt 300V 10A datasheet
SGH10N60RUF
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GB70NA60UF
Abstract: No abstract text available
Text: GB70NA60UF Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier • Fully isolated package
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GB70NA60UF
OT-227
E78996
2002/95/EC
OT-227
11-Mar-11
GB70NA60UF
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Untitled
Abstract: No abstract text available
Text: APT45GP120JDQ2 1200V TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT45GP120JDQ2
E145592
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GB70LA60UF
Abstract: No abstract text available
Text: GB70LA60UF Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier • Fully isolated package
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GB70LA60UF
OT-227
E78996
2002/95/EC
OT-227
11-Mar-11
GB70LA60UF
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GB70LA60UF
Abstract: No abstract text available
Text: GB70LA60UF Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier • Fully isolated package
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GB70LA60UF
OT-227
E78996
2002/95/EC
OT-227
18-Jul-08
GB70LA60UF
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IC270
Abstract: No abstract text available
Text: APT20GF120KR 1200V 32A Fast IGBT TO-220 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop
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APT20GF120KR
O-220
20KHz
Coll30
F-33700
IC270
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IN60A
Abstract: PR30A IC270
Text: APT20GF120BRD 1200V 32A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.
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APT20GF120BRD
O-247
20KHz
O-247
IN60A
PR30A
IC270
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"SOT-227 B" dimensions
Abstract: gb70la60 GB70LA60UF
Text: GB70LA60UF Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier • Fully isolated package
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GB70LA60UF
OT-227
E78996
2002/95/EC
11-Mar-11
"SOT-227 B" dimensions
gb70la60
GB70LA60UF
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Untitled
Abstract: No abstract text available
Text: APT40GP60JDQ2 600V TYPICAL PERFORMANCE CURVES APT40GP60JDQ2 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT40GP60JDQ2
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Untitled
Abstract: No abstract text available
Text: APT20GF120BR 1200V 32A Fast IGBT TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop
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APT20GF120BR
O-247
20KHz
APT20GF120BR
F-33700
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TA8316AS
Abstract: TA8316 igbt gate drive circuits
Text: TOSHIBA TENTATIVE TA8316AS TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8316AS IGBT GATE DRIVER TA8316AS is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT. FEATURES • Can directly control from a microcontroller
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TA8316AS
TA8316AS
-200mA
961001EBA1
98TYP
TA8316
igbt gate drive circuits
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