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    IGBT 300V 100A Search Results

    IGBT 300V 100A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 300V 100A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXGN400N30A3

    Abstract: Aluminium nitride
    Text: IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching VCES = 300V IC25 = 400A VCE sat ≤ 1.15V E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    IXGN400N30A3 10kHz OT-227B, E153432 IC110 400N30A3 1-18-08-A IXGN400N30A3 Aluminium nitride PDF

    Untitled

    Abstract: No abstract text available
    Text: VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    IXGN400N30A3 10kHz OT-227B, E153432 IC110 400N30A3 1-18-08-A PDF

    IXGN400N60A3

    Abstract: 400N30A3 IXGN400N30A3
    Text: IXGN400N30A3 GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V Ultra Low Vsat PT IGBT for up to 10kHz switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    IXGN400N30A3 10kHz OT-227B, E153432 IC110 400N30A3 1-18-08-A IXGN400N60A3 IXGN400N30A3 PDF

    IXGX400N30A3

    Abstract: IXGK400N30A3 PLUS247 ixgx400
    Text: IXGK400N30A3 IXGX400N30A3 GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V Ultra-low Vsat PT IGBTs for up to 10kHz switching TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300


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    IXGK400N30A3 IXGX400N30A3 10kHz O-264 IC110 400N30A3 1-18-08-A IXGX400N30A3 IXGK400N30A3 PLUS247 ixgx400 PDF

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGK400N30A3 IXGX400N30A3 Ultra-low Vsat PT IGBTs for up to 10kHz switching TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300


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    IXGK400N30A3 IXGX400N30A3 10kHz O-264 IC110 400N30A3 1-18-08-A PDF

    200N30PB

    Abstract: 200n30
    Text: Preliminary Technical Information GenX3TM 300V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH100N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


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    IC110 IXGH100N30B3 100Turn-off 200N30PB 7-05-08-D 200n30 PDF

    200N30PB

    Abstract: IXGH100N30B3 200n3 200n30
    Text: Preliminary Technical Information GenX3TM 300V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH100N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


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    IC110 IXGH100N30B3 200N30PB 7-05-08-D IXGH100N30B3 200n3 200n30 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 VCES IC110 VCE sat tfi typ High Speed PT IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous


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    IXGH100N30C3 IC110 50-150kHz O-247 100N30C3 PDF

    IXGH100N30C3

    Abstract: 100N30 100N30C3
    Text: Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 VCES IC110 VCE sat tfi typ High Speed PT IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous


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    IXGH100N30C3 IC110 50-150kHz O-247 100N30C3 IXGH100N30C3 100N30 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Module 600V 100A IGBT Module MG06100S-BN4MM RoHS Features • H  igh short circuit capability, self limiting short circuit current • F  ree wheeling diodes with fast and soft reverse recovery • V  CE sat with positive temperature coefficient


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    MG06100S-BN4MM E71639 MG06100 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7MBR100SB060 IGBT Modules IGBT MODULE S series 600V / 100A / PIM Features • Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier


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    7MBR100SB060 PDF

    7MBR100SB060

    Abstract: No abstract text available
    Text: 7MBR100SB060 IGBT Modules IGBT MODULE S series 600V / 100A / PIM Features • Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier


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    7MBR100SB060 7MBR100SB060 PDF

    7MBR100SB060

    Abstract: No abstract text available
    Text: 7MBR100SB060 IGBT Modules IGBT MODULE S series 600V / 100A / PIM Features • Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier


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    7MBR100SB060 7MBR100SB060 PDF

    7MBR100U2B060

    Abstract: 7MBR100U2B
    Text: 7MBR100U2B060 IGBT Modules IGBT MODULE U series 600V / 100A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier


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    7MBR100U2B060 7MBR100U2B060 7MBR100U2B PDF

    6MBI100U2B-060

    Abstract: No abstract text available
    Text: 6MBI100U2B-060 IGBT Modules IGBT MODULE U series 600V / 100A Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics


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    6MBI100U2B-060 6MBI100U2B-060 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Module 600V 100A IGBT Module MG06100S-BR1MM RoHS Features • Ultra Low Loss • P  ositive Temperature Coefficient • High Ruggedness • W  ith Fast Free-Wheeling Diodes • H  igh Short Circuit Capability Applications • SMPS and UPS • Converter


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    MG06100S-BR1MM E71639 PDF

    CM100RL-12NF

    Abstract: CM100RL12
    Text: MITSUBISHI IGBT MODULES CM100RL-12NF HIGH POWER SWITCHING USE CM100RL-12NF ¡IC . 100A ¡VCES . 600V ¡Insulated Type ¡7-elements in a pack


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    CM100RL-12NF CM100RL-12NF CM100RL12 PDF

    thyristor 12V 100A

    Abstract: 300V switching thyristor dc to ac inverter by thyristor schematic inverter dc to ac thyristor inverter 600V 100A thyristor THYRISTOR 1A 300V INVERTER 1A 12V sine wave inverter thyristor 12V it 1A
    Text: 7MBR100SD060 IGBT Modules PIM/Built-in converter with thyristor and brake S series 600V / 100A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive


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    7MBR100SD060 Repetitive000 thyristor 12V 100A 300V switching thyristor dc to ac inverter by thyristor schematic inverter dc to ac thyristor inverter 600V 100A thyristor THYRISTOR 1A 300V INVERTER 1A 12V sine wave inverter thyristor 12V it 1A PDF

    CM100RL-12NF

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100RL-12NF HIGH POWER SWITCHING USE CM100RL-12NF ¡IC . 100A ¡VCES . 600V ¡Insulated Type ¡7-elements in a pack


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    CM100RL-12NF CM100RL-12NF PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100RL-12NF HIGH POWER SWITCHING USE CM100RL-12NF ¡IC . 100A ¡VCES . 600V ¡Insulated Type ¡7-elements in a pack


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    CM100RL-12NF PDF

    CM100TL-12NF

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100TL-12NF HIGH POWER SWITCHING USE CM100TL-12NF ¡IC . 100A ¡VCES . 600V ¡Insulated Type ¡6-elements in a pack


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    CM100TL-12NF CM100TL-12NF PDF

    Untitled

    Abstract: No abstract text available
    Text: 7MBR100VZ060-50 IGBT Modules IGBT MODULE V series 600V / 100A / PIM Features Low VCE (sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier


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    7MBR100VZ060-50 PDF

    7MBR100VY060

    Abstract: No abstract text available
    Text: 7MBR100VY060-50 IGBT Modules IGBT MODULE V series 600V / 100A / PIM Features Low VCE (sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier


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    7MBR100VY060-50 7MBR100VY060 PDF

    thyristor 12V 100A

    Abstract: 7MBR100SD060 design sine wave power inverter thyristor 12V it 1A DM800 GW17 600V 100A thyristor dm800v
    Text: 7MBR100SD060 IGBT Modules PIM/Built-in converter with thyristor and brake S series 600V / 100A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive


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    7MBR100SD060 thyristor 12V 100A 7MBR100SD060 design sine wave power inverter thyristor 12V it 1A DM800 GW17 600V 100A thyristor dm800v PDF