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    IGBT 300V 70A Search Results

    IGBT 300V 70A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 300V 70A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FGPF70N30TU

    Abstract: FGPF70N30 FGPF70N30T igbt 70a
    Text: FGPF70N30 300V, 70A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF70N30 offers the optimum solution for PDP applications where low-condution


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    PDF FGPF70N30 FGPF70N30 O-220F FGPF70N30TU FGPF70N30T igbt 70a

    FGA70N30TD

    Abstract: No abstract text available
    Text: FGA70N30TD 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.


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    PDF FGA70N30TD FGA70N30TD

    FGPF70N30TD

    Abstract: igbt 300V 10A datasheet
    Text: FGPF70N30TD 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.


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    PDF FGPF70N30TD O-220F FGPF70N30TD igbt 300V 10A datasheet

    FGPF70N30T

    Abstract: igbt 200v 20a transistor* igbt 70A 300 V FGPF70N30TTU
    Text: FGPF70N30T 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.


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    PDF FGPF70N30T O-220F FGPF70N30T igbt 200v 20a transistor* igbt 70A 300 V FGPF70N30TTU

    IGBT 40A

    Abstract: igbt 300V 70A FGA70N30T FGA70N30TTU
    Text: FGA70N30T 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.


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    PDF FGA70N30T FGA70N30T IGBT 40A igbt 300V 70A FGA70N30TTU

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft


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    PDF I27309 GB50RF60K

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft


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    PDF I27309 GB50RF60K 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT3 Power Module Trench & Field Stop IGBT3 Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies


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    PDF APTCV60TLM24T3G

    APT0406

    Abstract: APT0502 NTC 10 thermistor
    Text: APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies


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    PDF APTCV60TLM24T3G APT0406 APT0502 NTC 10 thermistor

    Untitled

    Abstract: No abstract text available
    Text: APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT3 Power Module Trench & Field Stop IGBT3 Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80°C Application • Solar converter  Uninterruptible Power Supplies


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    PDF APTCV60TLM24T3G

    SANKEN BRIDGE DIODE 50A

    Abstract: sanken diode
    Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC SLA5227 Features ・Built-in IGBT and diode bridge of partial switching PFC circuit Enable to reduce mounting area ・Low saturation voltage IGBT VCE sat = 1.7V max ・Low saturation voltage diode bridge VF = 1.1V max


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    NTC 20 SP 010

    Abstract: No abstract text available
    Text: CM35MX-24A NX-Series CIB Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com (3Ø Converter + 3Ø Inverter + Brake) 35 Amperes/1200 Volts AJ AK AG A K E AH F G J L K M K M K K AA AB C K L K K K DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31


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    PDF CM35MX-24A Amperes/1200 NTC 20 SP 010

    SPM6G150-060D

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6G150-060D TECHNICAL DATA DATASHEET 4113, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    PDF SPM6G150-060D /-20V SPM6G150-060D

    CM35MX-24A

    Abstract: No abstract text available
    Text: CM35MX-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 35 Amperes/1200 Volts AJ AK AG A D K E AH F G J H L K M K M K K AA AB C K L K K K DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31


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    PDF CM35MX-24A Amperes/1200 CM35MX-24A

    Untitled

    Abstract: No abstract text available
    Text: APTGU70A60T Phase leg PT IGBT Power Module VCES = 600V IC = 70A @ Tc = 80°C Application VBUS NTC2 • • • • Q1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Power MOS 7 Punch Through PT IGBT


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    PDF APTGU70A60T 200kHz

    Untitled

    Abstract: No abstract text available
    Text: APTGU70DH60T Asymmetrical - Bridge PT IGBT Power Module VCES = 600V IC = 70A @ Tc = 80°C Application VBUS VBUS SENSE Q1 G1 CR3 • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features Power MOS 7 Punch Through PT IGBT


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    PDF APTGU70DH60T 200kHz

    Untitled

    Abstract: No abstract text available
    Text: APTGU70SK60T Buck chopper PT IGBT Power Module VCES = 600V IC = 70A @ Tc = 80°C Application VBUS • • NTC2 Q1 AC and DC motor control Switched Mode Power Supplies G1 Features Power MOS 7 Punch Through PT IGBT - Low conduction loss - Ultra fast tail current shutoff


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    PDF APTGU70SK60T 200kHz

    irgp4086

    Abstract: IRGP4086PBF igbt display plasma IRFPE30
    Text: PD - 97132 IRGP4086PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability


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    PDF IRGP4086PbF O-247AC irgp4086 IRGP4086PBF igbt display plasma IRFPE30

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


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    PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    Untitled

    Abstract: No abstract text available
    Text: APTGU70H60T Full - Bridge PT IGBT Power Module VCES = 600V IC = 70A @ Tc = 80°C Application • • • • VBUS Q3 Q1 G3 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features E3 OUT2 Q2 Q4 G2 G4 E2 E4 NTC1


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    PDF APTGU70H60T 200kHz

    Untitled

    Abstract: No abstract text available
    Text: APTGU70DA60T Boost chopper PT IGBT Power Module VCES = 600V IC = 70A @ Tc = 80°C Application NTC2 VBUS VBUS SENSE • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features Power MOS 7 Punch Through PT IGBT - Low conduction loss


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    PDF APTGU70DA60T 200kHz

    Untitled

    Abstract: No abstract text available
    Text: tSENSITRON SPM6G150-060D SEMICONDUCTOR TECHNICAL DATA DATASHEET 4113, REV ENG- Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    PDF SPM6G150-060D /-20V 125oC

    Untitled

    Abstract: No abstract text available
    Text: APTGU70SK60T Buck chopper PT IGBT Power Module VCES = 600V IC = 70A @ Tc = 80°C Application • • AC and DC motor control Switched Mode Power Supplies Features Power MOS 7 Punch Through PT IGBT - Low conduction loss - Ultra fast tail current shutoff


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    PDF APTGU70SK60T 200kHz

    Untitled

    Abstract: No abstract text available
    Text: APTGU70H60T Full - Bridge PT IGBT Power Module VCES = 600V IC = 70A @ Tc = 80°C Application • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Power MOS 7 Punch Through PT IGBT - Low conduction loss


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    PDF APTGU70H60T 200kHz