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    IGBT 500V 35A Search Results

    IGBT 500V 35A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 500V 35A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    G20N50c

    Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
    Text: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance


    Original     		HGTG20N50C1D O-247 500ns 150oC. G20N50c g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254 PDF

    G20N50c

    Abstract: g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt an7254
    Text: HGTG20N50C1D S E M I C O N D U C T O R 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE


    Original     		HGTG20N50C1D O-247 500ns 150oC. AN7254 AN7260) 150oC 100oC G20N50c g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt PDF

    PJ 969 diode

    Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
    Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode


    OCR Scan     		500ns HGTG20N50C1D O-247 AN7254 AN7260) PJ 969 diode G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V PDF

    MSK4351

    Abstract: three phase IGBT Bridge driving ic
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge


    Original     		ISO-9001 20KHz MIL-PRF-38534 MSK4351 MIL-PRF-38534) three phase IGBT Bridge driving ic PDF

    Untitled

    Abstract: No abstract text available
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge


    Original     		ISO-9001 20KHz MIL-PRF-38534 MSK4351 MIL-PRF-38534) PDF

    Untitled

    Abstract: No abstract text available
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge


    Original     		ISO-9001 20KHz MIL-PRF-38534 MSK4351 MIL-PRF-38534) PDF

    Untitled

    Abstract: No abstract text available
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge


    Original     		ISO-9001 20KHz MIL-PRF-38534 MSK4351 MIL-PRF-38534) PDF

    P channel 50A IGBT

    Abstract: MSK4351 use igbt for 3 phase induction motor
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED 500V, 50 Amp Capability at 110°C


    Original     		ISO-9001 MIL-PRF-38534 20KHz MSK4351 MIL-PRF-38534) P channel 50A IGBT use igbt for 3 phase induction motor PDF

    PJ 969 diode

    Abstract: DIODE 25PH 500 M302E71 pj 809 HGTG20N50C1D 08/bup 3110 transistor
    Text: HARRIS SEMICOND SECTOR ffl j a r s 1 bêE D • Lt30SE71 00502Ö3 732 ■ H A S HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 20 Amp, 500 Volt • Latch Free Operation


    OCR Scan     		t30SE71 HGTG20N50C1D O-247 500ns AN7254 AN7260) M302E71 QD50S67 PJ 969 diode DIODE 25PH 500 pj 809 HGTG20N50C1D 08/bup 3110 transistor PDF

    IGBT 500V 35A

    Abstract: 600v 30a IGBT what is fast IGBT transistor APT0408 APT5014B2LL IGBT tail time MOSFET 1200v 30a snubber circuit Current tail time of IGBT dodge IGBT structure
    Text: Technology to the Next Power Application Note APT0408 IGBT Technical Overview Distinguishing Features Application Tips Jonathan Dodge, P.E. Applications Engineering Manager Advanced Power Technology 29 November 2004 TECHNOLOGY TO THE NEXT POWER 1 What is an IGBT?


    Original     		APT0408 IGBT 500V 35A 600v 30a IGBT what is fast IGBT transistor APT0408 APT5014B2LL IGBT tail time MOSFET 1200v 30a snubber circuit Current tail time of IGBT dodge IGBT structure PDF

    stepper motor driver full bridge 6A

    Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge
    Text: BRUSHLESS MOTOR DRIVE STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Inverter Tacho/ Encoder Frequency Converter Servo Motor Drive Inverter Controller Tacho/ Encoder Inverter RECOMMENDED DEVICES MAIN FEATURES Mains Rectification BTW68/69 - xxx


    Original     		BTW68/69 BF3506TV /10TV BHA/K3012TV 0-55A 00V/35A 000V/35A L4981A/B STW/Y/ExNA60 STTAxx06 stepper motor driver full bridge 6A mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    MOSFET 1000v 30a

    Abstract: W210PIV400 mosfet 600V 100A MOSFET 1200v 30a MOSFET welding INVERTER welding inverter 100A UC3842 mosfet 600V 30A 1200v 30A to247 W210PIV STGW50N60
    Text: WELDING STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Primary Secondary Inverter RECOMMENDED DEVICES MAIN FEATURES Mains BF3506TV / BF3510TV BHA/K3012TV MSSxx / MDSxx BTW68-xxx / BTW69-xxx Input Rect. Bridge - 600V/35A; 1000V/35A Input Rect. Bridge - 1200V/30A 3-ph.


    Original     		BF3506TV BF3510TV BHA/K3012TV BTW68-xxx BTW69-xxx 00V/35A; 000V/35A 200V/30A L4981A/B STP/U/W/Y/ExxNB50/60 MOSFET 1000v 30a W210PIV400 mosfet 600V 100A MOSFET 1200v 30a MOSFET welding INVERTER welding inverter 100A UC3842 mosfet 600V 30A 1200v 30A to247 W210PIV STGW50N60 PDF

    5000watt

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=25 C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original     		SPM6G060-120D 5000watt PDF

    Sensitron Semiconductor

    Abstract: 210C DS34C87 SFH6186-4 SPM6G060-120D SPM6G060-120D-B
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.3 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original     		SPM6G060-120D Sensitron Semiconductor 210C DS34C87 SFH6186-4 SPM6G060-120D SPM6G060-120D-B PDF

    IC53A

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.2 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original     		SPM6G060-120D IC53A PDF

    Untitled

    Abstract: No abstract text available
    Text: htemational Preliminary Data Sheet PD - 5.030 [^Rectifier CPU165MM Short Circuit Rated Fast IGBT IGBT SIP MODULE Features • Short Circuit Rated - 10ps @ 125°C, V qe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail" losses


    OCR Scan     		CPU165MM 10kHz) 360Vdc, 00A/ps yfactors01% 4A55452 02D1C PDF

    IGBT 500V 35A

    Abstract: diode C407 IGBT tail time C408 diode transistor C408 c407 diode 600V 25A Ultrafast Diode DATA SHEET OF IGBT CPU165MM
    Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 5.030 CPU165MM IGBT SIP MODULE Short Circuit Rated Fast IGBT Features • Short Circuit Rated - 10µs @ 125°C, V GE = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses


    Original     		CPU165MM 10kHz) 360Vdc, C-408 IGBT 500V 35A diode C407 IGBT tail time C408 diode transistor C408 c407 diode 600V 25A Ultrafast Diode DATA SHEET OF IGBT CPU165MM PDF

    IGBT 1500v 50A

    Abstract: OM9369SF BLDC delta wye control
    Text: Preliminary Data Sheet OM9369SF FULL-FEATURED, ‘SMART-POWER’ MODULE FOR HIGH-VOLTAGE DIRECT DRIVE OF 3-PHASE BRUSHLESS DC MOTORS 50 Amp, Push-Pull, Smart-Power Hybrid Commutates, Controls, And Directly Drives q BLDC Motors High-Voltage, High-Power 3q FEATURES


    Original     		OM9369SF Opt39: IGBT 1500v 50A OM9369SF BLDC delta wye control PDF

    IGBT 500V 35A

    Abstract: diode C407 C408 diode CPU165MM IGBT tail time
    Text: Preliminary Data Sheet PD - 5.030 CPU165MM IGBT SIP MODULE Short Circuit Rated Fast IGBT Features • Short Circuit Rated - 10µs @ 125°C, V GE = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM


    Original     		CPU165MM 10kHz) 360Vdc, C-408 IGBT 500V 35A diode C407 C408 diode CPU165MM IGBT tail time PDF

    G20N50c

    Abstract: g20n50c1d g20n50 g20N50c1 G20N40 igbt 400V 20A "Power Diode" 500V 20A power Diode 400V 20A G20N50E1D HGTH20N50E1D
    Text: S E M I C O N D U C T O R HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE ON 2.5V Max. EMITTER COLLECTOR


    Original     		HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D O-218AC HGTH20N50E1D 150oC G20N50c g20n50c1d g20n50 g20N50c1 G20N40 igbt 400V 20A "Power Diode" 500V 20A power Diode 400V 20A G20N50E1D PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRI S SEHICOND SECTOR ill H A R R IS \M J s e m i c o n d u c t o r bôE D • M3D2S71 HAS 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Features Package • 20 Amp, 400 and 500 Volt JEDEC TO-218 AC TOP VIEW • Vce on 2.5V Max.


    OCR Scan     		M3D2S71 O-218 HGTH20N40C1D, HGTH20N40E1D HGTH20N50C1D, HGTH20N50E1D AN7254 AN7260) 100AJ PDF

    IGBT 500V 35A

    Abstract: CPU165MM 100V 35A igbt
    Text: International 1*»]Rectifier Preliminary Data Sheet PD - 5.030 CPU165MM IGBT SIP MODULE Short Circuit Rated Fast IGBT Features • Short Circuit Rated - 1 0ps @ 125°C, V qe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses


    OCR Scan     		10kHz) CPU165MM 360Vdc, 00A/ps IGBT 500V 35A CPU165MM 100V 35A igbt PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT 7.5 kW 400 V •回路図 CIRCUIT PVD75-12 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 質量 Approximate Weight：400ｇ ■最大定格 Maximum Ratings（TC＝25℃） 種類 Type 3 Phase Rectification Diode Switch Thyristor


    Original     		PVD75-12 PDF