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    IGBT 500V 45A Search Results

    IGBT 500V 45A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 500V 45A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge


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    MIL-PRF-38534 20KHz MIL-PRF-38535 MSK4351 MIL-PRF-38534) 1000G PDF

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge Ultra Low Thermal Resistance Integral Free Wheeling Fast Recovery Epitaxial Diode FRED


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    MIL-PRF-38534 20KHz MSK4351 MIL-PRF-38534) 1000G PDF

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


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    ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


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    100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    igbt 500V 45A

    Abstract: 45N120 IXSH45N120
    Text: High Voltage, Low VCE sat IGBT IXSH 45N120 VCES IC25 VCE(sat) Maximum Ratings TO-247 AD = 1200 V = 75 A = 3V Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous


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    45N120 O-247 igbt 500V 45A 45N120 IXSH45N120 PDF

    45N120 ixys

    Abstract: No abstract text available
    Text: High Voltage, Low VCE sat IGBT IXSH 45N120 VCES IC25 VCE(sat) Maximum Ratings TO-247 AD = 1200 V = 75 A = 3V Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous


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    45N120 O-247 45N120 ixys PDF

    ECONOPACK

    Abstract: EMP30P06D rectifier bridge 300v 30a 800uH
    Text: Bulletin I27182 08/06 EMP30P06D PIM+ EMP Features: Package: Power Module: • • • • NPT IGBTs 30A, 600V 10us Short Circuit capability Square RBSOA Low Vce on (2.05Vtyp @ 30A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology


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    I27182 EMP30P06D 05Vtyp 34Vtyp 50ppm/ EMP30P06D ECONOPACK rectifier bridge 300v 30a 800uH PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2350 STK581U3C2D-E Advance Information http://onsemi.com Inverter IPM for 3-phase Motor Drive Overview This “Inverter IPM” is highly integrated device containing all High Voltage HV control from HV-DC to 3-phase outputs in a single SIP module (Single-In line Package). Output stage uses IGBT/FRD technology and implements


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    A2350 STK581U3C2D-E A2350-15/15 PDF

    k25t1202

    Abstract: K25t1202 IGBT k25t120 K25T12 IKW25N120T2 igbt 500V 45A PG-TO-247-3
    Text: nd TrenchStop 2 IKW25N120T2 generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode C • • Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


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    IKW25N120T2 k25t1202 K25t1202 IGBT k25t120 K25T12 IKW25N120T2 igbt 500V 45A PG-TO-247-3 PDF

    K25t1202 IGBT

    Abstract: No abstract text available
    Text: nd TrenchStop 2 IKW25N120T2 generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode C • • Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


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    IKW25N120T2 K25t1202 IGBT PDF

    k25t1202

    Abstract: K25t1202 IGBT k25t120 IKW25N120T2 fast recovery diode 600v 1200A 5n fast recovery diodes
    Text: TrenchStop 2 nd IKW25N120T2 generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode C • • Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


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    IKW25N120T2 k25t1202 K25t1202 IGBT k25t120 IKW25N120T2 fast recovery diode 600v 1200A 5n fast recovery diodes PDF

    k25t1202

    Abstract: K25t1202 IGBT K25T12 5n fast recovery diodes k25t120
    Text: TrenchStop 2 nd IKW25N120T2 generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode C • • Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


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    IKW25N120T2 k25t1202 K25t1202 IGBT K25T12 5n fast recovery diodes k25t120 PDF

    Untitled

    Abstract: No abstract text available
    Text: IKW25N120T2 TrenchStop 2 nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode C •  Short circuit withstand time – 10s Designed for : - Frequency Converters


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    IKW25N120T2 PDF

    sincos encoder

    Abstract: IR2214 SCHEMATIC servo dc IGBTS sin/cos encoder Texas 3 phase AC servo drive schematic SCHEMATIC servo IGBTS SCHEMATIC POWER SUPPLY WITH IGBTS igbt trigger by opto Resolver to digital convertor 30a 12v adcin
    Text: Bulletin I27180 19 - Sept PIIPM30P06D009 Programmable Isolated IPM PI-IPM Features: Package: Power Module: • • • • NPT IGBTs 30A, 600V 10us Short Circuit capability Square RBSOA Low Vce on (2.05Vtyp @ 30A, 25°C) Positive Vce(on) temperature coefficient


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    I27180 PIIPM30P06D009 05Vtyp 34Vtyp 50ppm/ PIPM30P06D009 PIIPM30P06D009 sincos encoder IR2214 SCHEMATIC servo dc IGBTS sin/cos encoder Texas 3 phase AC servo drive schematic SCHEMATIC servo IGBTS SCHEMATIC POWER SUPPLY WITH IGBTS igbt trigger by opto Resolver to digital convertor 30a 12v adcin PDF

    i2c hall effect sensor

    Abstract: sincos encoder irf 3250 400v 15A transistor module resolver sensor 100C IR2214 PIIPM30P06D009 TMS320LF2406A VTH100C
    Text: PIIPM30P06D009 Preliminary Data PIIPM30P06D009 Programmable Isolated IPM PI-IPM Features: Package: Power Module: • • • • NPT IGBTs 30A, 600V 10us Short Circuit capability Square RBSOA Low Vce on (2.46Vtyp @ 30A, 25°C) Positive Vce(on) temperature coefficient


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    PIIPM30P06D009 46Vtyp 86Vtyp 50ppm/ 15Vdc 300mA Async-0204 PIIPM30P06D009 i2c hall effect sensor sincos encoder irf 3250 400v 15A transistor module resolver sensor 100C IR2214 TMS320LF2406A VTH100C PDF

    MOSFET DRIVER circuits using microcontroller 8051

    Abstract: 2931 hall sensor IFX1050G plc home automation circuit diagram SLB 78CIFX1600P infineon TPM trusted platform module logic circuit IFX91401 relais rs 6V relay single phase to three phase converter using ic 8051 to drive 3 phase induction motor
    Text: Industrial Automation Products for Energy-Efficient Applications [ www.infineon.com ] Industrial Automation These days, it’s hard to imagine the production landscape without industrial automation systems. Growing requirements of high product quality, paired with expectations of equally


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    PDF

    igbt 500V 45A

    Abstract: 45N100 ixsh45n100
    Text: Low VCE sat IGBT IXSH 45N100 IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM


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    45N100 O-247 O-204 igbt 500V 45A 45N100 ixsh45n100 PDF

    Untitled

    Abstract: No abstract text available
    Text: Low VCE sat IGBT IXSH 45N100 IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM


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    45N100 O-247 O-204 PDF

    Untitled

    Abstract: No abstract text available
    Text: Low VCE sat IGBT IXSH 45N100 IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM


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    45N100 45N100 O-247 O-204 PDF

    R2J24020F

    Abstract: R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114
    Text: 2009.07 ルネサス 電源システム RENESAS Power supply system www.renesas.com 電気に変換されたエネルギーは無駄なく使うことで地球全体 の炭素使用量を減らし地球の温暖化を防ぐことができます。 電気は主に発電所で作られ、高電圧のACで送電されること


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    RJJ01F0008-0201 R2J24020F R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114 PDF

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


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    O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 PDF

    LINDNER fuses

    Abstract: e230073 LINDNER fuses neozed c2165 FR10GB69V30 FR14UC69V50 FR10GB69V12.5 M0816 Y300056 n300093c
    Text: Fuses – Fusegear Semiconductor Protection Fuses • Protistor Mapping 70 - 71 • American Round Fuses - Form 101 range 72 - 81 • Other American Round Fuses 82 • Ferrule-style Protistor fuses 83 - 87 • Protistor DIN standard fuses sizes 000-00 88 - 89


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    A218707K Y211023K F215124K P219226K Z211024K MSD823I MSD10251I MSD831I MSD1031I MSD1038I LINDNER fuses e230073 LINDNER fuses neozed c2165 FR10GB69V30 FR14UC69V50 FR10GB69V12.5 M0816 Y300056 n300093c PDF

    IR2133 application note

    Abstract: ir2233j application ir2133 IR2133J
    Text: Data Sheet No. PD60107 revX IR2133/IR2135 J&S & (PbF) IR2233/IR2235(J&S) & (PbF) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10V/12V to 20V DC and


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    PD60107 IR2133/IR2135 IR2233/IR2235 0V/12V 28-Lead IR2133 application note ir2233j application ir2133 IR2133J PDF

    IR2133 application note

    Abstract: IR2133 application notes
    Text: Data Sheet No. PD60107 revX IR2133/IR2135 J&S & (PbF) IR2233/IR2235(J&S) & (PbF) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10V/12V to 20V DC and


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    PD60107 IR2133/IR2135 IR2233/IR2235 0V/12V 28-Lead IR2133 application note IR2133 application notes PDF