Untitled
Abstract: No abstract text available
Text: STGIPS35K60L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 35 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling
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STGIPS35K60L1
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Untitled
Abstract: No abstract text available
Text: STGIPS35K60L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 600 V short-circuit rugged IGBT Preliminary data Features • IPM 35 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling diodes ■
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STGIPS35K60L1
SDIP-22L
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Untitled
Abstract: No abstract text available
Text: STGIPS35K60L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 35 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling
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STGIPS35K60L1
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STGIPS35K60L1
Abstract: Stgips35k60 GIPS35K60L1
Text: STGIPS35K60L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 600 V short-circuit rugged IGBT Preliminary data Features • IPM 35 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling diodes ■
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STGIPS35K60L1
STGIPS35K60L1
Stgips35k60
GIPS35K60L1
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Untitled
Abstract: No abstract text available
Text: STGIPS35K60L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 35 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling
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STGIPS35K60L1
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IXGH20N60AU1
Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient
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N60U1
N60AU1
O-247
IXGH20N60U1
IXGH20N60AU1
IXGH20N60AU1
IXGH20N60U1
20N60AU1
*GH20N60AU1
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49n6
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with HiPerFRED IXGN 49N60BD3 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Buck configuration IGBT Preliminary data sheet Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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49N60BD3
OT-227B,
0-06A
49n6
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD3 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Buck configuration IGBT Preliminary data sheet Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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50N60BD3
OT-227B,
0-06A
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ID110
Abstract: No abstract text available
Text: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600
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16N60C2
16N60C2D1
16N60C2D1
IC110
ID110
O-263
O-220
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16N60
Abstract: 16N60C2D1
Text: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600
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16N60C2
16N60C2D1
IC110
ID110
16N60C2D1
O-220
728B1
123B1
16N60
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10N60A
Abstract: IGBT 10N60 10N60 10N60 e N60A
Text: Low VCE sat IGBT High speed IGBT IXGH 10 N60 IXGH 10 N60A Maximum Ratings VCES IC25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM
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10N60A
10N60
10N60
10N60A
10N60U1
IGBT 10N60
10N60 e
N60A
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igbt module
Abstract: QID0660009 IGBT 600V 600A resistance ALUMINUM
Text: QID0660009 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual IGBT Module 600 Amperes / 600 Volts Description: Powerex Dual IGBT Module is designed specially for customer applications. Features: Dim Inches Millimeters
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QID0660009
-1200A/
igbt module
QID0660009
IGBT 600V 600A
resistance ALUMINUM
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Untitled
Abstract: No abstract text available
Text: SKiM606GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Ts = 25 °C 641 A Ts = 70 °C 512 A 600 A ICnom ICRM VGES SKiM 63 tpsc Trench IGBT Modules SKiM606GD066HD Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V
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SKiM606GD066HD
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STGB3NB60KD
Abstract: STGB3NB60KDT4 STGD3NB60K STGD3NB60KT4 STGP3NB60K STGP3NB60KD STGP3NB60KDFP GD3NB60K GP3NB60K L4914
Text: STGP3NB60K - STGD3NB60K STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT TYPE STGP3NB60K STGD3NB60K STGP3NB60KD STGP3NB60KDFP STGB3NB60KD • ■ ■ ■ ■ ■ ■ VCES 600 600 600 600 600 VCE sat (Typ) @125°C
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STGP3NB60K
STGD3NB60K
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
O-220/DPAK/D2PAK
STGP3NB60K
STGP3NB60KD
STGP3NB60KDFP
STGB3NB60KD
O-220
STGB3NB60KD
STGB3NB60KDT4
STGD3NB60K
STGD3NB60KT4
STGP3NB60KD
STGP3NB60KDFP
GD3NB60K
GP3NB60K
L4914
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FGT313
Abstract: FGT412
Text: 2-3 IGBT Selection Guide By VCES VCES V 330 330 400 600 600 600 600 600 600 IC (A) 20 30 20 20 25 30 30 50 50 PC (W) 35 35 35 35 60 60 60 150 150 Part Number Package FGT312 FGT313 FGT412 FGT612 FGM622S FGM603 FGM623S MGD623N MGD623S TO220F(FM20) TO220F(FM20)
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FGT312
FGT313
FGT412
FGT612
FGM622S
FGM603
FGM623S
MGD623N
MGD623S
O220F
FGT313
FGT412
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to-3pl
Abstract: igbt to220 1MBC15-060 1MBH50D-060 1MB30-060 1MB20-060 1MBC05-060 1MBC05D-060 1MBC10D-060 1MBG10D-060
Text: 22307^5 GGDMODO 70b • s DISCRETE IGBT 600 VOLT, DISCRETE IGBT • 5 - 50 Amps Device Vces Type lc Pc VcE(sat V g e = 15V Cont. Per IGBT Max. lc Watts Volts Amps Volts Amps 1MBC05-060 600 5 1M B C 10-060 600 600 600 : 1M BC15-060 1M B20-060 Switching Time (Max.)
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1MBC05-060
O-220
BC10-060
1MBC15-060
1MB20-060
1MB30-060
1MBH50-060
ERW01-060
to-3pl
igbt to220
1MBH50D-060
1MBC05D-060
1MBC10D-060
1MBG10D-060
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1MBC15-060
Abstract: 1mb12-140 TO-3PL 1MBH50D-060 collmer igbt
Text: DISCRETE IGBT 600 VOLT, DISCRETE IGBT • 5 - 5 0 Amps Device Type V ces Pc lc Tc=25°C Tc=80°C Tc=100°C Volts Amps Amps Amps 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 600 600 600 600 13 15 5 10 1MB30-060 1MBH50-060 600 600 20 24 38 48 82 20 30 Vge = 15V
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1MBC05-060
1MBC10-060
1MBC15-060
1MB20-060
1MB30-060
1MBH50-060
O-220
1MBC05D-060
1mb12-140
TO-3PL
1MBH50D-060
collmer igbt
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2mb1200
Abstract: DIODE s3l 2MB1300 2mb1200l 2MB1200LB-060 1MB1300L-060 1mb1400l-060 1MBI50L-060 2MB1100L-060 2MBI50L-060
Text: m 2 E 3 & 7 oooa'ì'ì? 513 IGBT • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device Pc VcE sat R th RTH VF W Per IGBT Max. lc ton toff tf IGBT Diòde Max. Max. Am ps W atts V olts Am ps jjse c. usee. usee. °C/W °C/W Volts usee. 600 600 600
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2MBI50F-060
2MBI75F-060
2MBI100F-060
2MBI150F-060
2MBI200F-060
2MBI300F-060
2MB1200LB-060
2MBI300L-060
2MBI300LB-060
2MBI400L-060
2mb1200
DIODE s3l
2MB1300
2mb1200l
1MB1300L-060
1mb1400l-060
1MBI50L-060
2MB1100L-060
2MBI50L-060
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Untitled
Abstract: No abstract text available
Text: STANDARD HERMETIC IGBT MODULES WITH GATE DRIVERS HIGH SPEED IG BT DEVICES WITH FAST REVERSE RECOVERY DIODES IGBT CHARACTERISTICS Tc=90°C Continuous Collector Current lc @ To=25°C Pulsed Collector Current T c=25°c 1 ms Volts Amps Amps Amps 600 600 600 600
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SPM2G48-60
SPM2G65-60
SPM2G75-60
SPM2G85-60
SPM4G48-60
SPM6G48-60
SPM6G65-60
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LT 220 diode
Abstract: No abstract text available
Text: DISCRETE IGBT 600 VO LT, D IS C R E T E IGBT • 5-50 Amps Device Vces !' Type Volts 60B 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 600 600 600 600 600 V g e =15V lc Cont. Pc Per&BT VcE sal Max. Amps 5 10 15 20 30 50 Watts Volts 3.0 3.0
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1MBC05-060
1MBC10-060
1MBC15-060
1MB20-060
1MB30-060
1MBH50-060
TQ-22Q
O-220
LT 220 diode
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2mb1200
Abstract: 2mb1200lb-060 2MBI100F-060 M-219 m219 1MBI300F-060 2MBI150F-060 2mbi200f 2MBI300F-060 2MBI50F-060
Text: m 2 E 3 & 7 oooa'ì'ì? 513 IGBT • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device VCES Pc VcE sat R th RTH VF W Per IGBT Max. lc ton toff tf IGBT Diòde Max. Max. Am ps W atts V olts Am ps jjse c. usee. usee. °C/W °C/W Volts usee. 600 600
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2MBI50F-060
2MBI75F-060
2MBI100F-060
2MBI150F-060
2MBI200F-060
2MBI300F-060
2MB1200LB-060
2MBI300L-060
2MBI300LB-060
2MBI400L-060
2mb1200
M-219
m219
1MBI300F-060
2mbi200f
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IGBT EQUIVALENT
Abstract: SC20P 402-12 SC26P
Text: CAPACITORS FOR POWER ELECTRONICS Snubber Capacitors & Modules SM series Module for IGBT equivalent circuit SM 04 * Low -inductance & high-Q * Easy connecting Type IGBT [VCES] Diode [VRRM /lo/trr] Cap 600/150 600/10/0.05 1.5 *P [A] W H T 450/600 75 45.5 31.5
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SC20P
SC40P
SC79P
SC19P
SC12P
IGBT EQUIVALENT
402-12
SC26P
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Untitled
Abstract: No abstract text available
Text: ^C25 VCE sat 20 A 20 A 2.5 V 3.0 V VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGA/IXGH 10N60U1 600 V IXGA/IXGH 10 N60AU1 600 V Combi Packs Preliminary data Symbol Test Conditions V« Td = 25°C to 150°C 600 V VCGR ^ 600 V VGES Continuous
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10N60U1
N60AU1
4bflb22b
GD0223Ã
10N60AU1
D94006DE,
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Untitled
Abstract: No abstract text available
Text: IGBT IGBT: INS. GATE BIPOLAR TRANSISTOR PACKAGE TO-257 % TO-254 0 j/c * °c/w 570 750 2.0 3.1 310 750 2.0 31 2.0 800 1500 1.25 24 2.9 100 1500 1.25 bvces SNG30620 600 20 2.6 SNG30620A 600 20 600 SNG20640 VOLTS ^ies * pf DEVICE TYPE fC cont AMPS VCE (sat)
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O-257
O-254
SNG30620
SNG30620A
SNG20640
SNG20648A
SNG40635
SNG40648A
SNG40660A
SNG40675
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