Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXGR72N60C3 GenX3TM 600V IGBT VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = £ = 600V 35A 2.7V 55ns High-Speed Low-Vsat PT IGBT 40-100 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES
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IXGR72N60C3
IC110
247TM
72N60C3
11-25-09-C
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Untitled
Abstract: No abstract text available
Text: XPTTM 600V IGBT GenX3TM w/ Diode MMIX1X100N60B3H1 Electrically Isolated Tab VCES = 600V IC110 = 68A VCE(sat) ≤ 1.80V Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR
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MMIX1X100N60B3H1
IC110
10-30kHz
0-06A
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM IXXH100N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IXXH100N60C3
IC110
20-60kHz
O-247
100N60C3
0-10-A
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Untitled
Abstract: No abstract text available
Text: IXXH100N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30 kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Maximum Ratings
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IXXH100N60B3
IC110
150ns
O-247
100N60B3
12-01-11B
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FGW35N60HD
Abstract: No abstract text available
Text: / FGW35N60HD Discrete IGBT Discrete IGBT High-Speed V series 600V / 35A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply
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FGW35N60HD
FGW35N60HD
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FGW35N60H
Abstract: No abstract text available
Text: / FGW35N60H Discrete IGBT Discrete IGBT High-Speed V series 600V / 35A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply
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FGW35N60H
FGW35N60H
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BSM20GP60
Abstract: BSM35GP120 BSM25GP120 BSM50GP120 BSM15GP120 IGBT 600v 20a 600v 20a IGBT 600v 20a IGBT driver BSM30GP60 FP50R12KS4C
Text: power the Home Products PIM News Contact Editorials Job Offers Company Search Site Content IGBT Modules . . . . . . . . . . . 10A 15A 20A 25A 30A 35A 35A 50A 50A 75A 100A IGBT Driver 600V Low Loss 1200V Low Loss BSM10GP60 BSM15GP60 BSM20GP60 BSM10GP120 BSM15GP120
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BSM10GP60
BSM15GP60
BSM20GP60
BSM10GP120
BSM15GP120
BSM30GP60
BSM50GP60
BSM50GP60G
BSM75GP60
BSM100GP60
BSM20GP60
BSM35GP120
BSM25GP120
BSM50GP120
BSM15GP120
IGBT 600v 20a
600v 20a IGBT
600v 20a IGBT driver
BSM30GP60
FP50R12KS4C
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FGW75N60HD
Abstract: FGW75N60 fgw75 secret
Text: / FGW75N60HD Discrete IGBT Discrete IGBT High-Speed V series 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply
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FGW75N60HD
FGW75N60HD
FGW75N60
fgw75
secret
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100n60
Abstract: IXXR100N60B3H1
Text: Advance Technical Information IXXR100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings
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10-30kHz
IC110
IXXR100N60B3H1
150ns
0-06A
100N60B3
12-01-11-B
100n60
IXXR100N60B3H1
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100n60
Abstract: No abstract text available
Text: Preliminary Technical Information IXXK100N60B3H1 IXXX100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-264 (IXXK) Symbol Test Conditions Maximum Ratings
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IXXK100N60B3H1
IXXX100N60B3H1
10-30kHz
150ns
O-264
IF110
100N60B3
0-10-A
100n60
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXR100N60B3H1 (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings
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IC110
IXXR100N60B3H1
150ns
10-30kHz
ISOPLUS247TM
0-06A
100N60B3
12-01-11-B
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FGW50N60VD
Abstract: FGW50N60
Text: / FGW50N60VD Discrete IGBT Discrete IGBT High-Speed V series 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive
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FGW50N60VD
FGW50N60VD
FGW50N60
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APT80GP60J
Abstract: No abstract text available
Text: APT80GP60J 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT80GP60J
APT80GP60J
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXXN100N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings
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IXXN100N60B3H1
10-30kHz
150ns
OT-227B,
E153432
IF110
100N60B3
12-01-11-B
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IC 7427
Abstract: IC 7427 datasheet APT80GP60JDF3
Text: APT80GP60JDF3 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT80GP60JDF3
IC 7427
IC 7427 datasheet
APT80GP60JDF3
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IXXX100N60B3H1
Abstract: ixxk100n60b3h1
Text: IXXK100N60B3H1 IXXX100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC100 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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10-30kHz
IXXK100N60B3H1
IXXX100N60B3H1
IC100
150ns
O-264
IF110
062in.
O-264)
IXXX100N60B3H1
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Untitled
Abstract: No abstract text available
Text: XPTTM 600V GenX3TM w/ Diode VCES IC100 VCE sat tfi(typ) IXXK100N60B3H1 IXXX100N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IC100
IXXK100N60B3H1
IXXX100N60B3H1
10-30kHz
150ns
O-264
IF110
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IXXN100N60B3H1
Abstract: No abstract text available
Text: Advance Technical Information IXXN100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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10-30kHz
IXXN100N60B3H1
150ns
IF110
100N60B3
12-01-11-B
IXXN100N60B3H1
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100N60C3
Abstract: IXXK100N60C3H1 IXXX100N60C3H1 IF110 PLUS247 100n60
Text: Preliminary Technical Information IXXK100N60C3H1 IXXX100N60C3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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IXXK100N60C3H1
IXXX100N60C3H1
20-60kHz
O-264
IF110
100N60C3
0-10-A
IXXK100N60C3H1
IXXX100N60C3H1
IF110
PLUS247
100n60
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXXK100N60C3H1 IXXX100N60C3H1 Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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IXXK100N60C3H1
IXXX100N60C3H1
20-60kHz
O-264
IF110
Indu100
100N60C3
0-10-A
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STGW35NB60S
Abstract: JESD97 light dimmer igbt GW35NB60S
Text: STGW35NB60S N-channel 35A - 600V - TO-247 Low drop PowerMESH IGBT Features Type VCES STGW35NB60S 600V IC VCE sat (Max)@ 25°C @100°C < 1.7V • Low on-voltage drop (VCEsat) ■ Low input capacitance ■ High current capability 35A TO-247 Description Using the latest high voltage technology based on
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STGW35NB60S
O-247
STGW35NB60S
JESD97
light dimmer igbt
GW35NB60S
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V GenX3TM w/ Diode MMIX1X100N60B3H1 Electrically Isolated Tab VCES = 600V IC90 = 60A VCE(sat) ≤ 1.80V Medium-Speed Low-Vsat PT IGBT for 10-30 kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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MMIX1X100N60B3H1
0-06A
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Untitled
Abstract: No abstract text available
Text: IXXK100N60B3H1 IXXX100N60B3H1 XPTTM 600V IGBTs GenX3TM w/ Diode VCES IC100 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXXK100N60B3H1
IXXX100N60B3H1
IC100
10-30kHz
150ns
O-264
IF110
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V GenX3TM w/ Diode MMIX1X100N60B3H1 Electrically Isolated Tab VCES = 600V IC90 = 60A VCE(sat) ≤ 1.80V Medium-Speed Low-Vsat PT IGBT for 10-30 kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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MMIX1X100N60B3H1
0-06A
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