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    IGBT 600V 400A SINGLE HALF BRIDGE Search Results

    IGBT 600V 400A SINGLE HALF BRIDGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 600V 400A SINGLE HALF BRIDGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FZ1600R12KF4

    Abstract: IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb
    Text: power . Home Products IGBT 600V the News 1200V Contact Job Offers Company Search Site Content 1600V/1700V 2500V/3300V Sixpack Power Integrated Modules In Editorials future Low Loss. Half-Bridge Packages 50A BSM 50GB60DLC 75A BSM 75GB60DLC 100A BSM 100GB60DLC


    Original     		600V/1700V 500V/3300V 50GB60DLC 75GB60DLC 100GB60DLC 150GB60DLC 200GB60DLC 300GB60DLC FZ1600R12KF4 IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb PDF

    1.2397

    Abstract: DIM400WHS12-E000 4800A
    Text: DIM400WHS12-E000 DIM400WHS12-E000 Half Bridge IGBT Module PDS5664-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		DIM400WHS12-E000 PDS5664-1 DIM400WHS12-E000 1.2397 4800A PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM400WHS12-E000 DIM400WHS12-E000 Half Bridge IGBT Module PDS5664-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		DIM400WHS12-E000 PDS5664-1 DIM400WHS12-E000 PDF

    DIM400WHS12-A000

    Abstract: No abstract text available
    Text: DIM400WHS12-A000 DIM400WHS12-A000 Half Bridge IGBT Module Replaces February 2004 version, issue DS5689-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5689-3.0 May 2004 KEY PARAMETERS VCES typ


    Original     		DIM400WHS12-A000 DS5689-2 DS5689-3 DIM400WHS12-A000 PDF

    DIM400WHS12-A000

    Abstract: No abstract text available
    Text: DIM400WHS12-A000 Half Bridge IGBT Module DS5689-3.1 July 2007 LN25350 FEATURES Non Punch Through Silicon Isolated Copper Baseplate 10 s Short Circuit Withstand KEY PARAMETERS VCES VCE (sat) (typ) IC (max) IC(PK) (max) 1200V 2.2 V 400A 800A Lead Free construction


    Original     		DIM400WHS12-A000 DS5689-3 LN25350) DIM400WHS12-A000 PDF

    DIM400WHS12-A000

    Abstract: No abstract text available
    Text: DIM400WHS12-A000 DIM400WHS12-A000 Half Bridge IGBT Module Replaces December 2003 version, issue DS5689-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5689-2.0 February 2004 KEY PARAMETERS VCES typ


    Original     		DIM400WHS12-A000 DS5689-1 DS5689-2 DIM400WHS12-A000 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM400WHS12-A000 DIM400WHS12-A000 Half Bridge IGBT Module DS5689-1.3 December 2003 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 400A


    Original     		DIM400WHS12-A000 DS5689-1 DIM400WHS12-A000 PDF

    igbt 600v 400A single half bridge

    Abstract: 4800a
    Text: DIM400WHS12-H000 DIM400WHS12-H000 Fast Half Bridge IGBT Module Target Infomation DS5626-1.3 August 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ fsw for Applications > 20kHz ■ Isolated Copper Baseplate KEY PARAMETERS VCES


    Original     		DIM400WHS12-H000 DS5626-1 20kHz DIM400WHS12-H000 igbt 600v 400A single half bridge 4800a PDF

    1.2397

    Abstract: No abstract text available
    Text: DIM400BSS12-E000 DIM400BSS12-E000 Single Switch IGBT Module PDS5705-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		DIM400BSS12-E000 PDS5705-1 DIM400BSS12-E000 sa0518 1.2397 PDF

    DS5306-2

    Abstract: IGBT ac switch circuit AN4502 AN4503 AN4505 AN4506 GP400LSS12 AN5000 principle of rating
    Text: GP400LSS12 GP400LSS12 Single Switch IGBT Module Replaces February 2000 version, DS5306-1.2 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200V Rating ■ 400A Per Module DS5306-2.3 November 2000


    Original     		GP400LSS12 DS5306-1 DS5306-2 GP400LSS12 IGBT ac switch circuit AN4502 AN4503 AN4505 AN4506 AN5000 principle of rating PDF

    1.2397

    Abstract: DIM400BSS12-E000
    Text: DIM400BSS12-E000 DIM400BSS12-E000 Single Switch IGBT Module PDS5705-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		DIM400BSS12-E000 PDS5705-1 DIM400BSS12-E000 1.2397 PDF

    TLP250 MOSFET DRIVER application note

    Abstract: TLP250 MOSFET DRIVER calculation of IGBT snubber 74hc06 tlp250 equivalent TLP250 igbt driver applications TLP250 application note difference between IGBT and MOSFET IN inverter SCR 207A scr driver ic for rectifier 3 phase
    Text: CONTENTS POWER DEVICES and IGBT 2 Variation of NIEC’s IGBT Modules 4 Ratings and Characteristics 6 Power Loss and Thermal Design 10 Gate Drive 20 High Side Drive 24 3-Phase Bridge Inverter 26 Short circuit and Over-voltage Protection 30 Snubber 33 Parallel Operation


    Original     		00A/600V 00A/1200V TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER calculation of IGBT snubber 74hc06 tlp250 equivalent TLP250 igbt driver applications TLP250 application note difference between IGBT and MOSFET IN inverter SCR 207A scr driver ic for rectifier 3 phase PDF

    DIM400BSS12-A000

    Abstract: dynex
    Text: DIM400BSS12-A000 DIM400BSS12-A000 Single Switch IGBT Module Replaces February 2004 version, issue DS5672-3.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5672-4.0 May 2004 KEY PARAMETERS VCES typ


    Original     		DIM400BSS12-A000 DS5672-3 DS5672-4 DIM400BSS12-A000 dynex PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM400BSS12-A000 DIM400BSS12-A000 Single Switch IGBT Module Replaces DIM400LSS12-A000 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5672-2.3 December 2003 KEY PARAMETERS VCES typ VCE(sat)* (max)


    Original     		DIM400BSS12-A000 DIM400LSS12-A000 DS5672-2 DIM400BSS12-A000 PDF

    DIM400BSS12-A000

    Abstract: No abstract text available
    Text: DIM400BSS12-A000 Single Switch IGBT Module DS5672-4.1 June 2007 LN25349 FEATURES 10 s Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES VCE (sat) * (typ) IC (max) IC(PK) (max) 1200V 2.2 V 400A 800A *(Measured at the power bus-bars and not the auxiliary


    Original     		DIM400BSS12-A000 DS5672-4 LN25349) DIM400BSS12-A000 PDF

    bi-directional switches IGBT

    Abstract: DIM400PHM17-A000
    Text: . DIM400PHM17-A000 Half Bridge IGBT Module DS5561-1.3 May 2008 LN26122 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES VCE (sat) * (typ) IC (max) IC(PK)


    Original     		DIM400PHM17-A000 DS5561-1 LN26122) DIM400PHM17-A000 bi-directional switches IGBT PDF

    half bridge circuit diagram

    Abstract: No abstract text available
    Text: . DIM400PHM17-A000 Half Bridge IGBT Module DS5561-1.2 JULY 2005 LN24089 FEATURES • 10µs Short Circuit Withstand • High Thermal Cycling Capability • Non Punch Through Silicon • Isolated MMC Base with AlN Substrates • 6kV Isolation Voltage • Lead Free Construction


    Original     		DIM400PHM17-A000 DS5561-1 LN24089) DIM400PHM17-A000 1700Vbility half bridge circuit diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM400LSS12-A000 DIM400LSS12-A000 Single Switch IGBT Module Replaces March 2003, version DS5534-3.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5534-4.0 July 2003 KEY PARAMETERS VCES typ VCE(sat)*


    Original     		DIM400LSS12-A000 DS5534-3 FDS5534-4 DIM400LSS12-A000 PDF

    DIM400WHS17-E000

    Abstract: No abstract text available
    Text: DIM400WHS17-E000 DIM400WHS17-E000 Half Bridge IGBT Module Replaces December 2003 version, issue PDS5665-2.1 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5665-3.1 February 2004


    Original     		DIM400WHS17-E000 PDS5665-2 PDS5665-3 DIM400WHS17-E000 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM400WLS12-A000 DIM400WLS12-A000 IGBT Chopper Module - Lower Arm Control DS5747-2.0 May 2004 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat)* (max) IC (max) IC(PK) 1200V


    Original     		DIM400WLS12-A000 DS5747-2 DIM400WlS12-A000 PDF

    DIM400WKS12-A000

    Abstract: No abstract text available
    Text: DIM400WKS12-A000 DIM400WKS12-A000 IGBT Chopper Module - Upper Arm Control DS5779-1.0 May 2004 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat)* (max) IC (max) IC(PK) 1200V


    Original     		DIM400WKS12-A000 DS5779-1 DIM400WKS12-A000 PDF

    transistor a 949

    Abstract: No abstract text available
    Text: DIM400BSS12-H000 DIM400BSS12-H000 Fast Single Switch IGBT Module Target Infomation DS5628-1.3 August 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ fsw for Applications > 20kHz ■ Isolated Copper Baseplate KEY PARAMETERS


    Original     		DIM400BSS12-H000 DS5628-1 20kHz DIM400BSS12-H000 transistor a 949 PDF

    12v to 1000v inverters circuit diagrams

    Abstract: bi-directional switches IGBT DIM400LSS12-A000 6x55 diode IC LM 2003
    Text: DIM400LSS12-A000 DIM400LSS12-A000 Single Switch IGBT Module Replaces June 2002, version DS5534-2.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5534-3.0 March 2003 KEY PARAMETERS VCES typ VCE(sat)*


    Original     		DIM400LSS12-A000 DS5534-2 DS5534-3 DIM400LSS12-A000 12v to 1000v inverters circuit diagrams bi-directional switches IGBT 6x55 diode IC LM 2003 PDF

    DIM400LSS12-A000

    Abstract: No abstract text available
    Text: DIM400LSS12-A000 DIM400LSS12-A000 Single Switch IGBT Module Preliminary Information Replaces issue May 2002, version DS5534-1.4 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5534-1.4 May 2002 KEY PARAMETERS


    Original     		DIM400LSS12-A000 DS5534-1 DIM400LSS12-A00arantee DIM400LSS12-A000 PDF