60N90
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH60N90C3 XPTTM 900V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 60A 2.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ TJ VGES VGEM Maximum Ratings = 25°C to 175°C
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IXYH60N90C3
IC110
O-247
60N90C3
60N90
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60N90
Abstract: No abstract text available
Text: Advance Technical Information 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYH60N90C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 60A 2.7V 88ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IC110
IXYH60N90C3
O-247
60N90C3
60N90
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYN80N90C3H1 900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC90 VCE sat tfi(typ) = = ≤ = 900V 70A 2.7V 86ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYN80N90C3H1
OT-227B,
E153432
IF110
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH40N90C3D1 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH40N90C3D1
IC110
110ns
O-247
IF110
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40N90C3D1
Abstract: No abstract text available
Text: Advance Technical Information 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYH40N90C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IC110
IXYH40N90C3D1
110ns
O-247
IF110
40N90C3D1
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IXYH40N90C3D1
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N90C3D1 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH40N90C3D1
IC110
110ns
O-247
IF110
062in.
IXYH40N90C3D1
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PDF
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60N90
Abstract: IXYH60N90C3 60n90c3
Text: Advance Technical Information IXYH60N90C3 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 60A 2.7V 88ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IXYH60N90C3
IC110
O-247
062in.
60N90C3
60N90
IXYH60N90C3
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PDF
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80n90
Abstract: 80N90C3 IXYT80N90C3 IXYH80N90C3
Text: Advance Technical Information IXYT80N90C3 IXYH80N90C3 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 80A 2.7V 86ns TO-268 (IXYT) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYT80N90C3
IXYH80N90C3
IC110
O-268
062in.
O-247)
O-268
O-247
80N90C3
80n90
IXYH80N90C3
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80n90
Abstract: No abstract text available
Text: Advance Technical Information 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) IXYT80N90C3 IXYH80N90C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 80A 2.7V 86ns TO-268 (IXYT) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXYT80N90C3
IXYH80N90C3
O-268
80N90C3
80n90
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYT80N90C3 IXYH80N90C3 XPTTM 900V IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 80A 2.7V 86ns TO-268 (IXYT) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYT80N90C3
IXYH80N90C3
IC110
O-268
80N90C3
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APT15GP90B
Abstract: T0-247
Text: APT15GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP90B
O-247
APT15GP90B
T0-247
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APT15GP90BDF1
Abstract: APT15GP90K
Text: APT15GP90K 900V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP90K
O-220
APT15GP90BDF1
APT15GP90K
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Fast Recovery Bridge Rectifier, 60A, 600V
Abstract: APT10035LLL APT64GA90LD30 MIC4452
Text: APT64GA90LD30 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT64GA90LD30
shifte106)
Fast Recovery Bridge Rectifier, 60A, 600V
APT10035LLL
APT64GA90LD30
MIC4452
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APT15GP90BDF1
Abstract: T0-247
Text: APT15GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP90BDF1
O-247
APT15GP90BDF1
T0-247
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diode schottky 600v
Abstract: No abstract text available
Text: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT43GA90BD30
APT43GA90SD30
diode schottky 600v
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APT15GP90K
Abstract: No abstract text available
Text: APT15GP90K APT15GP90K TYPICAL PERFORMANCE CURVES 900V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP90K
O-220
APT15GP90K
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Untitled
Abstract: No abstract text available
Text: APT15GP90K APT15GP90K TYPICAL PERFORMANCE CURVES 900V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP90K
O-220
APT15GP
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IGBT 900v 60a
Abstract: Fast Recovery Bridge Rectifier, 60A, 600V MIC4452 APT64GA90B2D30 APT64GA90LD30
Text: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT64GA90LD30
APT64GA90B2D30
IGBT 900v 60a
Fast Recovery Bridge Rectifier, 60A, 600V
MIC4452
APT64GA90B2D30
APT64GA90LD30
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PDF
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Untitled
Abstract: No abstract text available
Text: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT64GA90LD30
APT64GA90B2D30
APT64GA90LD30
APT64GA90B2D30
O-247
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APT43GA90B
Abstract: APT43GA90BD30 MIC4452 RECTIFIER DIODE 1000A schottky
Text: APT43GA90BD30 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT43GA90BD30
APT43GA90B
APT43GA90B
APT43GA90BD30
MIC4452
RECTIFIER DIODE 1000A schottky
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Untitled
Abstract: No abstract text available
Text: APT15GP90BDF1 TYPICAL PERFORMANCE CURVES APT15GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP90BDF1
O-247
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APT64GA90B2D30
Abstract: IGBT 900v 60a Fast Recovery Bridge Rectifier, 60A, 600V APT10035LLL APT64GA90LD30 MIC4452 1000A MOS
Text: APT64GA90B2D30 APT64GA90LD30 900V APT64GA90B2D30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT64GA90B2D30
APT64GA90LD30
APT64GA90B2D30
IGBT 900v 60a
Fast Recovery Bridge Rectifier, 60A, 600V
APT10035LLL
APT64GA90LD30
MIC4452
1000A MOS
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PDF
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Untitled
Abstract: No abstract text available
Text: APT15GP90K APT15GP90K TYPICAL PERFORMANCE CURVES 900V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP90K
O-220
APT15GP90
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PDF
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Untitled
Abstract: No abstract text available
Text: APT15GP90B TYPICAL PERFORMANCE CURVES APT15GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP90B
O-247
APT15GP4
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