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    IGBT BRIDGE DRIVER Search Results

    IGBT BRIDGE DRIVER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TC78B011FTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=30/Square, Sine Wave Visit Toshiba Electronic Devices & Storage Corporation

    IGBT BRIDGE DRIVER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA Datasheet 4165, Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G060-120D /-20V PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6G180-060D TECHNICAL DATA DATASHEET 4245, REV - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 180 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G180-060D /-20V 125oC PDF

    Untitled

    Abstract: No abstract text available
    Text: For partial switching PFC Integrated IGBT and Diode Bridge Rectifier SLA5222 Features Package  SLA5222 incorporates IGBT and diodes for bridge rectifier of partial switching PFC, and achieves board space reduction.  Low Saturation Voltage IGBT  Low VF Diode Bridge Rectifier


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    SLA5222 SLA5222 SLA5222-DS PDF

    LIN opto isolator

    Abstract: SPM6G080-060D IC 4098
    Text: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G080-060D /-20V LIN opto isolator SPM6G080-060D IC 4098 PDF

    Sensitron Semiconductor

    Abstract: 210C DS34C87 SFH6186-4 SPM6G060-120D SPM6G060-120D-B
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.3 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G060-120D Sensitron Semiconductor 210C DS34C87 SFH6186-4 SPM6G060-120D SPM6G060-120D-B PDF

    IGBT desaturation

    Abstract: SPM6G060-120D IGBT 50 amp 1200 volt
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA Datasheet 4165, Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G060-120D /-20V IGBT desaturation SPM6G060-120D IGBT 50 amp 1200 volt PDF

    IC53A

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.2 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G060-120D IC53A PDF

    LIN opto isolator

    Abstract: diode piv 800 50A IGBT desaturation SPM6G080-120D
    Text: SENSITRON SEMICONDUCTOR SPM6G080-120D TECHNICAL DATA DATASHEET 4099, REV D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G080-120D /-20V LIN opto isolator diode piv 800 50A IGBT desaturation SPM6G080-120D PDF

    diode sy 160

    Abstract: n 4113 SPM6G150-060D
    Text: SENSITRON SEMICONDUCTOR SPM6G150-060D TECHNICAL DATA DATASHEET 4113, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G150-060D /-20V diode sy 160 n 4113 SPM6G150-060D PDF

    IGBT 500V 35A

    Abstract: power supply switching 24-2 OPTO ISOLATOR high temperature 210C DS34C87 SFH6186-4 SPM6G060-120D 10000Watt
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.2 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G060-120D IGBT 500V 35A power supply switching 24-2 OPTO ISOLATOR high temperature 210C DS34C87 SFH6186-4 SPM6G060-120D 10000Watt PDF

    3 phase IGBT gate driver 1200

    Abstract: SPM6G140-120D IGBT 50 amp 1200 volt
    Text: SENSITRON SEMICONDUCTOR SPM6G140-120D TECHNICAL DATA DATASHEET 4100, REV B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G140-120D /-20V 3 phase IGBT gate driver 1200 SPM6G140-120D IGBT 50 amp 1200 volt PDF

    C 4977

    Abstract: ON 4977 3 phase IGBT gate driver 1200 3 phase IGBT gate driver 4977 IGBT gate driver ic DS34C87 SPM6G140-060D OF IGBT
    Text: SENSITRON SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA Data Sheet 4977 Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G140-060D C 4977 ON 4977 3 phase IGBT gate driver 1200 3 phase IGBT gate driver 4977 IGBT gate driver ic DS34C87 SPM6G140-060D OF IGBT PDF

    4100 data sheet

    Abstract: IGBT gate driver ic 210C DS34C87 SFH6186-4 SPM6G120-120D
    Text: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA Data Sheet 4100 Rev. B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G120-120D 4100 data sheet IGBT gate driver ic 210C DS34C87 SFH6186-4 SPM6G120-120D PDF

    IGBT 60A

    Abstract: tp 806 IGBT DRIVER SCHEMATIC 3 PHASE SPM6G140-120D
    Text: SENSITRON SEMICONDUCTOR SPM6G140-120D TECHNICAL DATA DATASHEET 4100, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G140-120D /-20V 125oC IGBT 60A tp 806 IGBT DRIVER SCHEMATIC 3 PHASE SPM6G140-120D PDF

    C 4977

    Abstract: ON 4977 SPM6G140-060D
    Text: SENSITRON _ SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA Data Sheet 4977 Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G140-060D 125oC C 4977 ON 4977 SPM6G140-060D PDF

    2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM

    Abstract: SPM6G070-060D 210C DS34C87 SFH6186-4
    Text: SENSITRON SEMICONDUCTOR SPM6G070-060D TECHNICAL DATA DATASHEET 4328, Rev. A.1 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G070-060D 2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM SPM6G070-060D 210C DS34C87 SFH6186-4 PDF

    SPM6G140-060D

    Abstract: C 4977 IGBT DRIVER Analog Devices Brake cleaner 210C bi-directional switches IGBT ON 4977
    Text: SENSITRON SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA DATASHEET 4977, Rev. B Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G140-060D 500uA, SPM6G140-060D C 4977 IGBT DRIVER Analog Devices Brake cleaner 210C bi-directional switches IGBT ON 4977 PDF

    SPM6G120-120D

    Abstract: 210C 3 pins Variable resistor 5K ohm
    Text: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA DATASHEET 4100, Rev. C Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G120-120D 500uA, SPM6G120-120D 210C 3 pins Variable resistor 5K ohm PDF

    2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM

    Abstract: DS34C87 LIN opto isolator SFH6186-4 SPM6G070-060D
    Text: SENSITRON SEMICONDUCTOR SPM6G070-060D TECHNICAL DATA DATASHEET 4328, Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G070-060D 2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM DS34C87 LIN opto isolator SFH6186-4 SPM6G070-060D PDF

    Untitled

    Abstract: No abstract text available
    Text: tSENSITRON SPM6G150-060D SEMICONDUCTOR TECHNICAL DATA DATASHEET 4113, REV ENG- Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G150-060D /-20V 125oC PDF

    5000watt

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=25 C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G060-120D 5000watt PDF

    SPM6G150-060D

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6G150-060D TECHNICAL DATA DATASHEET 4113, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G150-060D /-20V SPM6G150-060D PDF

    IC 4098

    Abstract: IGBT desaturation SPM6G080-060D 4098
    Text: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G080-060D /-20V IC 4098 IGBT desaturation SPM6G080-060D 4098 PDF

    IGBT DRIVER SCHEMATIC 3 PHASE

    Abstract: Hall 221 hall current sensors IGBT 250 amp 3 phase IGBT gate driver 1200 tp 806 igbt desaturation driver schematic SPM6G250-120D IGBT 50 amp 1200 volt IGBT DRIVER SCHEMATIC
    Text: SENSITRON SEMICONDUCTOR SPM6G250-120D TECHNICAL DATA DATASHEET 4109, REV ENG- Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 250 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    SPM6G250-120D /-20V IGBT DRIVER SCHEMATIC 3 PHASE Hall 221 hall current sensors IGBT 250 amp 3 phase IGBT gate driver 1200 tp 806 igbt desaturation driver schematic SPM6G250-120D IGBT 50 amp 1200 volt IGBT DRIVER SCHEMATIC PDF