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    IGBT CROSS Search Results

    IGBT CROSS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MP-5XRJ11PPXS-014 Amphenol Cables on Demand Amphenol MP-5XRJ11PPXS-014 Flat Silver Satin Modular Crossed wiring Cable, RJ11 / RJ11 14ft Datasheet
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    IGBT CROSS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Application Note 91

    Abstract: 81227 power BJT anti saturation diode IGBT gate driver ic optocoupler without base pin for mosfet driver IGBT EQUIVALENT BJT isolated Base Drive circuit mosfet igbt gate driver ic IGBT parallel DRIVE OSCILLATION optocoupler pnp
    Text: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers and Solid-State Relays Application Note 91 IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect


    Original     		24-Oct-11 Application Note 91 81227 power BJT anti saturation diode IGBT gate driver ic optocoupler without base pin for mosfet driver IGBT EQUIVALENT BJT isolated Base Drive circuit mosfet igbt gate driver ic IGBT parallel DRIVE OSCILLATION optocoupler pnp PDF

    IGBT/MOSFET Gate Drive

    Abstract: IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging
    Text: VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) since it


    Original     		20-May-09 IGBT/MOSFET Gate Drive IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging PDF

    calculation of IGBT snubber

    Abstract: darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES 3.0 General Considerations for IGBT and Intelligent Power Modules H-Series IGBT and Intelligent Power Modules are based on advanced third generation IGBT and free-wheel


    Original     		00V/100A calculation of IGBT snubber darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module PDF

    MITSUBISHI CM400

    Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


    Original     		20kHz MITSUBISHI CM400 MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h PDF

    smps 500W

    Abstract: smps 500w half bridge 500w half bridge smps smps 1kW IRFP450 full bridge smps 100w half bridge h bridge irf740 smps igbt HGTG30N60A4 1kW IGBT
    Text: 108872 IGBT LC 0006.1 9/11/00 11:28 AM Page 1 First-Choice Power Switch IGBT Switch Mode Power Supply SMPS IGBTs SMPS IGBT Product Offering New SMPS IGBTs are now the first-choice power switch for high-frequency, off-line power conversion Intersil has developed the 600V IGBT


    Original     		100kHz 100kHz HGTG12N60A4 O-252AA O-220AB T0-263AB O-268 Breakdown/10 100ns 200ns smps 500W smps 500w half bridge 500w half bridge smps smps 1kW IRFP450 full bridge smps 100w half bridge h bridge irf740 smps igbt HGTG30N60A4 1kW IGBT PDF

    kpb 307

    Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor PDF

    Untitled

    Abstract: No abstract text available
    Text: APT75GT120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT75GT120JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		APT75GT120JRDQ3 APT75GT120JRDQ3 20KHz E145592 PDF

    SGH80N60UFD

    Abstract: No abstract text available
    Text: IGBT SGH80N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UFD series provides low conduction and switching losses. UFD seriesis designed for the applications such as motor control and general inverters where High Speed Switching


    Original     		SGH80N60UFD SGH80N60UFD PDF

    8845 diode

    Abstract: APT75GT120JRDQ3
    Text: APT75GT120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT75GT120JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		APT75GT120JRDQ3 APT75GT120JRDQ3 20KHz E145592 8845 diode PDF

    APT60DQ60

    Abstract: APT60GT60JRDQ3 APT60M75L2LL
    Text: APT60GT60JRDQ3 600V TYPICAL PERFORMANCE CURVES APT60GT60JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		APT60GT60JRDQ3 100KHz E145592 APT60DQ60 APT60GT60JRDQ3 APT60M75L2LL PDF

    Untitled

    Abstract: No abstract text available
    Text: APT50GT120B2RDQ2G 1200V, 50A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT50GT120B2RDQ2G 50KHz PDF

    Untitled

    Abstract: No abstract text available
    Text: APT50GT120B2RDQ2G 1200V, 50A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT50GT120B2RDQ2G 50KHz PDF

    Untitled

    Abstract: No abstract text available
    Text: APT60GT60JRDQ3 600V TYPICAL PERFORMANCE CURVES APT60GT60JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		APT60GT60JRDQ3 100KHz E145592 PDF

    APT50GT120B2RDQ2G

    Abstract: APT10078BLL 000241
    Text: APT50GT120B2RDQ2G 1200V, 50A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT50GT120B2RDQ2G 50KHz Symb49 APT50GT120B2RDQ2G APT10078BLL 000241 PDF

    30GT60BRD

    Abstract: APT30GT60BRDG 30gt60br 30GT60B 30gt APT30GT60BRD
    Text: 600V APT30GT60BRDG 55A APT30GT60BRD APT30GT60BRDG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT & FRED The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined


    Original     		APT30GT60BRDG APT30GT60BRD APT30GT60BRDG* O-247 150KHz 30GT60BRD APT30GT60BRDG 30gt60br 30GT60B 30gt PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT SGH23N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching


    Original     		SGH23N60UFD PDF

    Untitled

    Abstract: No abstract text available
    Text: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT200GT60JRDQ4 50KHz E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT SGF40N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching


    Original     		SGF40N60UF SGF40N60UF SGF40N60UFTU PDF

    sgf80n60uf

    Abstract: No abstract text available
    Text: IGBT SGF80N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching


    Original     		SGF80N60UF SGF80N60UF SGF80N60UFTU PDF

    calculation of IGBT snubber

    Abstract: silicon thermal grease single phase igbt based inverter 200 amps circuit CM100DY-24H darlington pair MODULE 200A powerex snubber capacitor IGBT snubber shinetsu G746 PM600HSA120 IGBT JUNCTION TEMPERATURE CALCULATION
    Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 3.0 General Considerations for IGBT and Intelligent Power Modules Powerex IGBT and Intelligent Power Modules are based on advanced low loss IGBT and free-wheel diode technologies. The general


    Original     		00V/100A calculation of IGBT snubber silicon thermal grease single phase igbt based inverter 200 amps circuit CM100DY-24H darlington pair MODULE 200A powerex snubber capacitor IGBT snubber shinetsu G746 PM600HSA120 IGBT JUNCTION TEMPERATURE CALCULATION PDF

    KG3B-35-5

    Abstract: WIMA MKP 10 MKT wima wacker general purpose silicone THERMISTOR KG3B Wacker Silicones P-12 igbt 6.5 kv snubber wima 2.2 uF MKP10 WIMA MKP 4 MKP10 0,1
    Text: Mounting Instructions and Application Notes for IGBT modules V1.0 ESD handling instructions SEMiXTM IGBT modules are devices sensitive to electrostatic discharge on the gates. To avoid electrostatic discharge on the gate which could destroy the IGBT-MOS gate, the module is


    Original     		/5/FO/000/013/Rev KG3B-35-5 WIMA MKP 10 MKT wima wacker general purpose silicone THERMISTOR KG3B Wacker Silicones P-12 igbt 6.5 kv snubber wima 2.2 uF MKP10 WIMA MKP 4 MKP10 0,1 PDF

    12A H4

    Abstract: SGF23N60UF
    Text: IGBT SGF23N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching


    Original     		SGF23N60UF 12A H4 SGF23N60UF PDF

    SGU2N60UF

    Abstract: No abstract text available
    Text: IGBT SGU2N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching


    Original     		SGU2N60UF SGU2N60UF PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT75GT120JRDQ3 APT75GT120JRDQ3 1200V E E Thunderbolt IGBT C G The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		APT75GT120JRDQ3 E145592 20KHz PDF