RJH1CF5RDPQ-80
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1CF5RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0355EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1CF5RDPQ-80
R07DS0355EJ0100
PRSS0003ZE-A
O-247)
RJH1CF5RDPQ-80
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PDF
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rjh1cf7
Abstract: single and gate ic number RJH1CF7RDPQ-80 RJH1CF7RDPQ-80#T2
Text: Preliminary Datasheet RJH1CF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0357EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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Original
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RJH1CF7RDPQ-80
R07DS0357EJ0100
PRSS0003ZE-A
O-247)
rjh1cf7
single and gate ic number
RJH1CF7RDPQ-80
RJH1CF7RDPQ-80#T2
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PDF
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Silicon N Channel IGBT High Speed Power Switching
Abstract: RJH1CF4RDPQ-80
Text: Preliminary Datasheet RJH1CF4RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0354EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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Original
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RJH1CF4RDPQ-80
R07DS0354EJ0100
PRSS0003ZE-A
O-247)
Silicon N Channel IGBT High Speed Power Switching
RJH1CF4RDPQ-80
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1CF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0356EJ0100 Rev.1.00 May 12, 2010 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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Original
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RJH1CF6RDPQ-80
R07DS0356EJ0100
PRSS0003ZE-A
O-247)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1CF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0356EJ0100 Rev.1.00 May 12, 2010 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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Original
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RJH1CF6RDPQ-80
R07DS0356EJ0100
PRSS0003ZE-A
O-247)
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PDF
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rjh1cf7
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1CF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0357EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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Original
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RJH1CF7RDPQ-80
R07DS0357EJ0100
PRSS0003ZE-A
O-247)
rjh1cf7
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PDF
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TF-600
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1DF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0413EJ0100 Rev.1.00 May 18, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1DF7RDPQ-80
R07DS0413EJ0100
PRSS0003ZE-A
O-247)
TF-600
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PDF
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rjh1bf7
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0394EJ0100 Rev.1.00 May 16, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1BF7RDPQ-80
R07DS0394EJ0100
PRSS0003ZE-A
O-247)
rjh1bf7
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PDF
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rjh1bf7
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0394EJ0100 Rev.1.00 May 16, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1BF7RDPQ-80
R07DS0394EJ0100
PRSS0003ZE-A
O-247)
rjh1bf7
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1DF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0413EJ0100 Rev.1.00 May 18, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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Original
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RJH1DF7RDPQ-80
R07DS0413EJ0100
PRSS0003ZE-A
O-247)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1CF4RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0354EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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Original
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RJH1CF4RDPQ-80
R07DS0354EJ0100
PRSS0003ZE-A
O-247)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1BF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0393EJ0100 Rev.1.00 May 16, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1BF6RDPQ-80
R07DS0393EJ0100
PRSS0003ZE-A
O-247)
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PDF
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rjh1cf5
Abstract: RJH1CF5RDPQ-80
Text: Preliminary Datasheet RJH1CF5RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0355EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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Original
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RJH1CF5RDPQ-80
R07DS0355EJ0100
PRSS0003ZE-A
O-247)
rjh1cf5
RJH1CF5RDPQ-80
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1BF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0393EJ0100 Rev.1.00 May 16, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1BF6RDPQ-80
R07DS0393EJ0100
PRSS0003ZE-A
O-247)
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PDF
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WESTINGHOUSE scr
Abstract: Westinghouse thyristor POW-R-BRIK WESTINGHOUSE scr fast dc to ac inverter by scr
Text: Power Semiconductor Solutions EXPERTISE INNOVATION RELIABILITY Powerex Quick Reference Guide Assemblies Air Cooled / Liquid Cooled / Integrated Power Structures POWER SEMICONDUCTOR SOLUTIONS Applications Include: • Battery Chargers Induction Heating/Melting
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202/3K/Pub.
WESTINGHOUSE scr
Westinghouse thyristor
POW-R-BRIK
WESTINGHOUSE scr fast
dc to ac inverter by scr
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block diagram induction heating
Abstract: igbt for HIGH POWER induction heating induction heating ic induction heating igbt MOSFET 40A 600V diagram induction cooker igbt for induction heating induction heating induction cooker circuit diagram IKW40N60H3
Text: Product Brief Highest performance, efficiency and reliability in Gate Driver ICs & IGBTs for Induction Heating Cooktops Being the market leader in IGBTs, Infineon offers a comprehensive, high performance portfolio of 600V discrete IGBTs for resonant-switching applications
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IHW40N60RF
B152-H9467-X-X-7600
DB2010-0001
block diagram induction heating
igbt for HIGH POWER induction heating
induction heating ic
induction heating igbt
MOSFET 40A 600V
diagram induction cooker
igbt for induction heating
induction heating
induction cooker circuit diagram
IKW40N60H3
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FGL40N120
Abstract: FGL40N120ANTU FAIRCHILD FGL40N120AN
Text: IGBT FGL40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor
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FGL40N120AN
FGL40N120AN
O-264
FGL40N120ANTU
FGL40N120
FAIRCHILD FGL40N120AN
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SGL40N150
Abstract: No abstract text available
Text: SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A
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SGL40N150
SGL40N150
O-264
SGL40N150TU
O-264
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FGL40N120AND
Abstract: No abstract text available
Text: FGL40N120AND 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating IH ,
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FGL40N120AND
FGL40N120AND
O-264
FGL40N120ANDTU
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Untitled
Abstract: No abstract text available
Text: SGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A
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SGL40N150D
SGL40N150D
O-264
SGL40N150DTU
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FGA15N120
Abstract: FGA15N120AND FGA15N120ANDTU igbt control circuit for induction heating "induction heating" circuit FGA15N120ANDT
Text: FGA15N120AND General Description Features Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating IH , motor control, general purpose
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FGA15N120AND
210ns
FGA15N120ANDTU
FGA15N120
FGA15N120AND
igbt control circuit for induction heating
"induction heating" circuit
FGA15N120ANDT
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IGBT 60A 1700v
Abstract: FGL60N170D FGL60N170DTU transistor fgl60n170d
Text: IGBT FGL60N170D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. FGL60N170D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A
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FGL60N170D
FGL60N170D
O-264
FGL60N170DTU
O-264
IGBT 60A 1700v
transistor fgl60n170d
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FGL40N150DTU
Abstract: No abstract text available
Text: FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A
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FGL40N150D
FGL40N150D
O-264
FGL40N150DTU
O-264
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BSC 27 flyback
Abstract: induction heating circuits IXEH40N120B2D4 igbt for induction heating igbt for induction heating ic
Text: IXEH 40N120B2D4 Advanced Technical Information IC25 = 65 A = 1200 V VCES VCE sat typ = 2.4 V SPT IGBT High Frequency Applications: • induction heating • flyback converters • resonant-mode power supplies C TO-247 AD G E G C E C (TAB) Features IGBT Conditions
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40N120B2D4
O-247
BSC 27 flyback
induction heating circuits
IXEH40N120B2D4
igbt for induction heating
igbt for induction heating ic
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