APT0405
Abstract: TRANZORB IGBT parallel DRIVE OSCILLATION GE215 g3 diode "ADVANCED POWER TECHNOLOGY EUROPE" SP6 CASE TO SINK SP6 CASE TO SINK THERMAL RESISTANCE "SP6 CASE TO SINK" THERMAL RESISTANCE capacitor RG
Text: Application note APT0405 November 2004 Parallel Connection of IGBT and MOSFET Power Modules. Serge Bontemps Product Manager Advanced Power Technology Europe Chemin de Magret 33700 Merignac, France Introduction Several dice are usually connected in parallel within high current power modules.
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APT0405
APT0405
TRANZORB
IGBT parallel DRIVE OSCILLATION
GE215
g3 diode
"ADVANCED POWER TECHNOLOGY EUROPE"
SP6 CASE TO SINK
SP6 CASE TO SINK THERMAL RESISTANCE
"SP6 CASE TO SINK" THERMAL RESISTANCE
capacitor RG
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carrier wiring diagram
Abstract: igbt wiring IGBT DRIVER SCHEMATIC IGBT parallel hitachi snubber capacitor igbt parallel diagram MBN800
Text: April 1998 No.17 Hitachi Power Devices Technical Information PD Room This month we present you topics on connecting IGBT elements in parallel following up on the material last month. Last month, we discussed on the gate driver circuit used for driving elements in parallel and this month, we describe the main circuit wiring.
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HGT1S12N60C3DR
Abstract: HGT1S12N60C3DRS HGTG12N60C3DR HGTP12N60C3DR TB334 12N60C3 TO-262AA Package equivalent 44J1
Text: HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 24A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode February 1998 Features Description • 24A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance
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HGTG12N60C3DR,
HGTP12N60C3DR,
HGT1S12N60C3DR,
HGT1S12N60C3DRS
150oC
250ns
HGT1S12N60C3DR
HGT1S12N60C3DRS
HGTG12N60C3DR
HGTP12N60C3DR
TB334
12N60C3
TO-262AA Package equivalent
44J1
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K20H603
Abstract: No abstract text available
Text: IGBT withsoft,fastrecoveryanti-paralleldiode IKP20N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKP20N60H3 Highspeedswitchingseriesthirdgeneration
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IKP20N60H3
K20H603
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K50H603
Abstract: IKW50N60H3
Text: IGBT withsoft,fastrecoveryanti-paralleldiode IKW50N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKW50N60H3 Highspeedswitchingseriesthirdgeneration
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IKW50N60H3
K50H603
IKW50N60H3
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K20H603
Abstract: No abstract text available
Text: IGBT withsoft,fastrecoveryanti-paralleldiode IKW20N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKW20N60H3 Highspeedswitchingseriesthirdgeneration
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IKW20N60H3
K20H603
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G3N60C3D
Abstract: G3N60C3 HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D TA49119 G3N60
Text: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS Semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = 25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability
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HGTP3N60C3D,
HGT1S3N60C3D,
HGT1S3N60C3DS
O-220AB
130ns
150oC
O-262AA
G3N60C3D
G3N60C3
HGT1S3N60C3D
HGT1S3N60C3DS
HGT1S3N60C3DS9A
HGTP3N60C3D
TA49119
G3N60
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K20H603
Abstract: No abstract text available
Text: IGBT withsoft,fastrecoveryanti-paralleldiode IKB20N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKB20N60H3 Highspeedswitchingseriesthirdgeneration
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IKB20N60H3
K20H603
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K30H603
Abstract: K30H60 IKW30N60H3
Text: IGBT withsoft,fastrecoveryanti-paralleldiode IKW30N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKW30N60H3 Highspeedswitchingseriesthirdgeneration
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IKW30N60H3
K30H603
K30H60
IKW30N60H3
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dc welding machine circuit diagram
Abstract: igbt for induction heating SM2G50US60
Text: Preliminary SM2G50US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS ' ' ' ' ' Package code : 7-PM-AA General Purpose Inverters
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SM2G50US60
dc welding machine circuit diagram
igbt for induction heating
SM2G50US60
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dc welding machine circuit diagram
Abstract: SM2G200US60
Text: Preliminary SM2G200US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS ' ' ' ' ' Package code : 7-PM-BA General Purpose Inverters
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SM2G200US60
dc welding machine circuit diagram
SM2G200US60
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dc welding machine circuit diagram
Abstract: dc servo igbt diagram igbt 300V 10A datasheet igbt module inverter welding machine ups circuit diagram using igbt SM2G75US60
Text: Preliminary SM2G75US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS ' ' ' ' ' Package code : 7-PM-AA General Purpose Inverters
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SM2G75US60
dc welding machine circuit diagram
dc servo igbt diagram
igbt 300V 10A datasheet
igbt module
inverter welding machine
ups circuit diagram using igbt
SM2G75US60
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dc welding machine circuit diagram
Abstract: induction heating ic SM2G400US60
Text: Preliminary SM2G400US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS ' ' ' ' ' Package code : 7-PM-EA General Purpose Inverters
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SM2G400US60
dc welding machine circuit diagram
induction heating ic
SM2G400US60
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dc welding machine circuit diagram
Abstract: igbt for induction heating SM2G100US60
Text: Preliminary SM2G100US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS ' ' ' ' ' Package code : 7-PM-AA General Purpose Inverters
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SM2G100US60
dc welding machine circuit diagram
igbt for induction heating
SM2G100US60
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dc welding machine circuit diagram
Abstract: SM2G300US60
Text: Preliminary SM2G300US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS ' ' ' ' ' Package code : 7-PM-BA General Purpose Inverters
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SM2G300US60
dc welding machine circuit diagram
SM2G300US60
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dc welding machine circuit diagram
Abstract: X2G75CD06P1
Text: HIGH POWER PT TYPE 2-PACK IGBT MODULE X2G75CD06P1 • CIRCUIT DIAGRAM 600V 75A PACKAGE : M1 ■ APPLICATIONS ■ FEATURES • Punch Through g PT Technology gy • 10us short circuit capability • High speed switching • Industry standard package • Fast & Soft Anti-Parallel FWD
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X2G75CD06P1
dc welding machine circuit diagram
X2G75CD06P1
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X2G100CD06P1
Abstract: Electric Welding Machine diagram diagram welding inverter dc to ac
Text: HIGH POWER PT TYPE 2-PACK IGBT MODULE X2G100CD06P1 • CIRCUIT DIAGRAM 600V 100A PACKAGE : M1 ■ FEATURES ■ APPLICATIONS • Punch Through g PT Technology gy • 10us short circuit capability • High speed switching • Industry standard package • Fast & Soft Anti-Parallel FWD
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X2G100CD06P1
X2G100CD06P1
Electric Welding Machine diagram
diagram welding inverter dc to ac
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SMBH1G100US60
Abstract: No abstract text available
Text: Preliminary SMBH1G100US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-AA ' Buck(Step Down) Converter
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SMBH1G100US60
SMBH1G100US60
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SMBL1G300US60
Abstract: 300V dc dc boost converter IGBT gate drive for a boost converter
Text: Preliminary SMBL1G300US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-BA ' Boost(Step Up) Converter
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SMBL1G300US60
SMBL1G300US60
300V dc dc boost converter
IGBT gate drive for a boost converter
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300V dc dc boost converter
Abstract: SMBL1G75US60
Text: Preliminary SMBL1G75US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-AA ' Boost(Step Up) Converter
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SMBL1G75US60
300V dc dc boost converter
SMBL1G75US60
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igbt module
Abstract: SMBL1G150US60
Text: Preliminary SMBL1G150US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-BA ' Boost(Step Up) Converter
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SMBL1G150US60
igbt module
SMBL1G150US60
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12N60D1D
Abstract: 12n60d1
Text: HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package Features • 12A,600V JE D E C S T Y LE TO -247 • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description
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HGTG12N60D1D
500ns
12N60D1D
12n60d1
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20n60b3d
Abstract: G20N60B
Text: HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Package Features • 40A, 600V at T c = +25°C JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150°C • Short Circuit Rated • Low Conduction Loss • Hyperfast Anti-Parallel Diode
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HGTG20N60B3D
140ns
O-247
HGTG20N60B3D
RHRP3Q60.
20n60b3d
G20N60B
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PJ 969 diode
Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode
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500ns
HGTG20N50C1D
O-247
AN7254
AN7260)
PJ 969 diode
G20N50c
20N50C1D
pj 986 diode
F25 transistor
mosfet 20n
GE 639
pj 809
IGBT 500V 35A
igbt 20A 500V
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