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    IGBT QUALIFICATION CIRCUIT Search Results

    IGBT QUALIFICATION CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004 Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd

    IGBT QUALIFICATION CIRCUIT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7RA13UPbF PDP TRENCH IGBT Key Parameters Features • Advanced Trench IGBT Technology  Optimized for Sustain and Energy Recovery circuits in PDP applications  Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency  High repetitive peak current capability


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    IRG7RA13UPbF IGBJESD47F JSTD020D PDF

    50b60pd

    Abstract: 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER
    Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET


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    6306A AUIRGP50B60PD1 AUIRGP50B60PD1E 50b60pd 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • • • • • • • Low V CE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient


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    AUIRGS30B60K AUIRGSL30B60K O-262 AUIRGSL30B60Knsible PDF

    IGBT 4000V

    Abstract: AN-994 C-150 AUIRGSL30B60K AUIRGS30B60K AUGS30B60K IGBT driver 4000V
    Text: PD - 96334 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR AUIRGS30B60K AUIRGSL30B60K C VCES = 600V Features • • • • • • • Low V CE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient


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    AUIRGS30B60K AUIRGSL30B60K O-262 IGBT 4000V AN-994 C-150 AUIRGSL30B60K AUIRGS30B60K AUGS30B60K IGBT driver 4000V PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET


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    6306A AUIRGP50B60PD1 AUIRGP50B60PD1E PDF

    Untitled

    Abstract: No abstract text available
    Text: DR3 Final Version Automotive Grade AUIR08152S BUFFER GATE DRIVER INTEGRATED CIRCUIT Features • • • • • • • • • Product Summary High peak output current Negative turn-off bias Separate Ron / Roff resistors Low supply current Under-voltage lockout


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    AUIR08152S AUIR08152 PDF

    Untitled

    Abstract: No abstract text available
    Text: Automotive Grade AUIR08152S BUFFER GATE DRIVER INTEGRATED CIRCUIT Features •         Product Summary High peak output current Negative turn-off bias Separate Ron / Roff resistors Low supply current Under-voltage lockout Full time ON capability


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    AUIR08152S AUIR08152 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96306 AUTOMOTIVE GRADE AUIRGP50B60PD1 WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET Parameters RCE(on) typ. = 61mΩ


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    AUIRGP50B60PD1 PDF

    AUGP4063D

    Abstract: AUIRGP4063D IGBT 4000V AU406
    Text: PD - 97629 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


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    AUIRGP4063D AUIRGP4063D-E AUGP4063D IGBT 4000V AU406 PDF

    irgp4086

    Abstract: IRGP4086PBF igbt display plasma IRFPE30
    Text: PD - 97132 IRGP4086PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability


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    IRGP4086PbF O-247AC irgp4086 IRGP4086PBF igbt display plasma IRFPE30 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRGR2B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE Features • Low VCE ON Non Punch Through IGBT technology  Low Diode VF  10µs Short Circuit Capability  Square RBSOA  Ultra-soft Diode Reverse Recovery Characteristics


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    IRGR2B60KDPbF PDF

    Untitled

    Abstract: No abstract text available
    Text: AUIRGP4063D AUIRGP4063D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


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    AUIRGP4063D AUIRGP4063D-E PDF

    cii 117 q

    Abstract: ic 5657
    Text: IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA


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    IRGP4078DPbF IRGP4078D-EP IRGP4078D-EPbF O-247AC O-247AD JESD47F) cii 117 q ic 5657 PDF

    100A6

    Abstract: IRGP4078DPBF
    Text: IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA


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    IRGP4078DPbF IRGP4078D-EP IRGP4078DPbF/EP O-247AC O-247AD JESD47F) 100A6 PDF

    IRGP4085

    Abstract: No abstract text available
    Text: PD - 97286 IRGP4085DPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability


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    IRGP4085DPbF O-247AC IRGP4085 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97222 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


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    IRGP4055DPbF O-247AC PDF

    IRGP4055DPBF

    Abstract: igbt display plasma TO-247AC Package igbt
    Text: PD - 97222 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


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    IRGP4055DPbF O-247AC IRGP4055DPBF igbt display plasma TO-247AC Package igbt PDF

    tc 97101

    Abstract: IRGP4065D IRFPE30 igbt qualification circuit l200h
    Text: PD - 97101 IRGP4065DPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability


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    IRGP4065DPbF O-247AC tc 97101 IRGP4065D IRFPE30 igbt qualification circuit l200h PDF

    tc 97101

    Abstract: igbt display plasma IRFPE30 IRGP4065DPBF
    Text: PD - 97101 IRGP4065DPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability


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    IRGP4065DPbF O-247AC tc 97101 igbt display plasma IRFPE30 IRGP4065DPBF PDF

    IRGP4065PBF

    Abstract: No abstract text available
    Text: PD - 97208 IRGP4065PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


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    IRGP4065PbF O-247AC IRGP4065PBF PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97059A IRGB4065PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


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    7059A IRGB4065PbF O-220AB PDF

    igbt display plasma

    Abstract: No abstract text available
    Text: PD - 97207 IRGP4055PbF PDP TRENCH IGBT Key Parameters Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


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    IRGP4055PbF O-247AC igbt display plasma PDF

    pdp driver

    Abstract: IRGI4055PbF
    Text: PD - 97186 IRGI4055PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


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    IRGI4055PbF O-220AB pdp driver IRGI4055PbF PDF

    igbt display plasma

    Abstract: ge 915
    Text: PD - 97058 IRGB4055PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original
    IRGB4055PbF O-220AB igbt display plasma ge 915 PDF