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    IGBT SPICE MODEL Search Results

    IGBT SPICE MODEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    IGBT SPICE MODEL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SIPMOS

    Abstract: siemens igbt profet igbt types SIPMOS SPICE SPICE MODELS models spice simulation Semiconductor Group igbt mosfet
    Text: Simulation Models for SIPMOS Components The SIEMENS Power Semiconductor Group provides SPICE models for many MOSFET and IGBT types. Please refer to the README.TXT-file in the /LHDATAdirectory on the CD-ROM. Additional models SPICE, SABER for MOSFET, PROFET, will be available by the


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    IGBT

    Abstract: igbt subcircuit AN1043 Spice Model for TMOS Power MOSFETs igbt spice igbt spice model Spice Model for TMOS Power MOSFETs igbt testing KP21 3 phase IGBT inverter 90-73
    Text: A SPICE MODEL FOR IGBTs A. F. Petrie, Independent Consultant, 7 W. Lillian Ave., Arlington Heights, IL 60004 Charles Hymowitz, Intusoft, 222 West 6th St. Suite 1070, San Pedro, CA 90731, 310 833-0710, FAX (310) 833-9658, E-mail [email protected]


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    n mosfet depletion pspice model parameters

    Abstract: igbt spice model IGBT Pspice igbt spice siemens igbt application note igbt subcircuit PIN diode Pspice model Semiconductor Group igbt emitter switched bipolar transistor pin diode model spice
    Text: Power Semiconductor Application Note AN_PSM3e Physics-Based Models of Power Semiconductor Devices for the Circuit Simulator SPICE R. Kraus, P. Türkes*, J. Sigg* University of Bundeswehr Munich, Werner-Heisenberg-Weg 39, D-85577 Neubiberg, Germany Phone: +49 89 6004-3665, Fax: (+49) 89 6004-2223, E-Mail: [email protected]


    Original     		D-85577 D-81739 n mosfet depletion pspice model parameters igbt spice model IGBT Pspice igbt spice siemens igbt application note igbt subcircuit PIN diode Pspice model Semiconductor Group igbt emitter switched bipolar transistor pin diode model spice PDF

    transistor IRF 9205

    Abstract: all transistor IRF 310 IRF 9205 list of n channel power mosfet HEXFET IRF igbt spice model AN-975 IRF n CHANNEL MOSFET Depletion-Mode MOSFET mosfet n channel irf
    Text: International S Rectifier M- r^ * _ f k«JJ Q < DT 92-5 INTERNATIONAL RECTIFIER APPLICATIONS • 233 KANSAS ST. • EL SEGUNDO, CA 90245 • TEL: 310) 322-3331 • FAX: (310) 322-3332 SPICE MODELS FOR MOS-GATED POWER DEVICES By Donald A. Dapkus II As PCs become more powerful and


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    MITSUBISHI IGBT SPICE

    Abstract: IGBT 60A spice model n mosfet depletion pspice model parameters igbt 1200v 600a igbt spice Infineon power diffusion process IGBT Pspice TRANSISTOR 1pz igbt spice model bjt 100a
    Text: Parameter Extraction for a Physics-Based Circuit Simulator IGBT Model X. Kang, E. Santi, J.L. Hudgins, P.R. Palmer* and J.F. Donlon* Department of Electrical Engineering University of South Carolina Columbia, SC 29208, USA [email protected] *Department of Engineering


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    Untitled

    Abstract: No abstract text available
    Text: Using the Thermal Impedance Model Application Note January 2000 AN9883 Alexander Craig The transient thermal impedance models available from Intersil Corporation provide the user with a simple method to estimate the junction temperature rise under a transient


    Original     		AN9883 PDF

    GBAN-PVI-1

    Abstract: HEXFET Power MOSFET designer manual GBAN-PVI-1 HEXFET Power MOSFET designer manual mosfet reliability testing report power supply using IR2155 IR2113 inductive motor control 957B Spice 2 computer models for hexfets HV Floating MOS-Gate Driver circuits power MOSFET reliability report
    Text: x @r | Other Products from IR Available Literature DATABOOKS GOVERNMENT AND SPACE PRODUCTS DESIGNER’S M A N U A L . GSP-1 HEXFET DESIGNER’S MANUAL - APPLICATION NOTES & RELIABILITY DATA. HDM-1, VOL. 1


    OCR Scan     		IR6000 IR2155 GBAN-PVI-1 HEXFET Power MOSFET designer manual GBAN-PVI-1 HEXFET Power MOSFET designer manual mosfet reliability testing report power supply using IR2155 IR2113 inductive motor control 957B Spice 2 computer models for hexfets HV Floating MOS-Gate Driver circuits power MOSFET reliability report PDF

    AN-7522

    Abstract: ladder network AN7522
    Text: Using the Thermal Impedance Model Application Note January 2000 AN-7522 Alexander Craig Title N98 bt sing erl pedce odel utho eyrds ter- The transient thermal impedance models available from Intersil Corporation provide the user with a simple method to estimate the junction temperature rise under a transient


    Original     		AN-7522 AN-7522 ladder network AN7522 PDF

    an7522

    Abstract: AN-7522 MOSFET 7121 AN75 igbt spice model
    Text: Using the Thermal Impedance Model Application Note January 2000 AN-7522 Alexander Craig Figure 1 shows how the model is implemented in SPICE. The transient thermal impedance model is the RC ladder network. The DC voltage source V1 represents the case temperature. For a single event or a fault condition in which a


    Original     		AN-7522 an7522 AN-7522 MOSFET 7121 AN75 igbt spice model PDF

    IRFD630

    Abstract: HCPL-322J HCPL322J TO-247AB
    Text: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA05JT12-247 O-247AB GA05JT12 00E-47 26E-28 77E-10 62E-10 00E-3 IRFD630 HCPL-322J HCPL322J TO-247AB PDF

    AN9881

    Abstract: TRANSISTOR kd 321 calculation of IGBT snubber igbt spice A150 HGTG30N60B3 HGTG40N60B3 IGBT ac switch circuit IGBT JUNCTION TEMPERATURE CALCULATION igbt testing
    Text: Numerical Method for Evaluating IGBT Losses Application Note January 2000 AN9881 Authors: Alain Laprade and Ron H. Randall An analysis is presented describing a numerical algorithm that develops loss prediction techniques for IGBTs operating in switched mode power circuits. A 600W zero-current


    Original     		AN9881 AN9881 TRANSISTOR kd 321 calculation of IGBT snubber igbt spice A150 HGTG30N60B3 HGTG40N60B3 IGBT ac switch circuit IGBT JUNCTION TEMPERATURE CALCULATION igbt testing PDF

    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA20JT12-247 O-247AB GA20JT12 00E-47 26E-28 98E-10 22E-9 50E-3 PDF

    SCR gate drive circuit

    Abstract: DT94-15 variable frequency drive circuit diagram dc-Motor controller 500w 600V igbt dc to dc buck converter IR2130 with ac voltage controller Drive circuit for IGBT using IR2130 dt94-9 SCR Gate Drive for ac to dc converter GBAN-PVI-1
    Text: App. Notes Design Tips Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Revised Application Notes and Design Tips INT-936 Title (and topic, if necessary) Document# Pages Date The Do's and Don'ts of Using MOS-Gated Transistors


    Original     		INT-936 May-97 Jun-97 AN-936) Jun-96 SCR gate drive circuit DT94-15 variable frequency drive circuit diagram dc-Motor controller 500w 600V igbt dc to dc buck converter IR2130 with ac voltage controller Drive circuit for IGBT using IR2130 dt94-9 SCR Gate Drive for ac to dc converter GBAN-PVI-1 PDF

    calculation of IGBT snubber

    Abstract: fairchild nomenclature A150 AN-7520 HGTG30N60B3 HGTG40N60B3 IGBT ac switch circuit mathcad failure analysis IGBT IGBT JUNCTION TEMPERATURE CALCULATION
    Text: Numerical Method for Evaluating IGBT Losses Application Note January 2000 AN-7520 Authors: Alain Laprade and Ron H. Randall Title N98 bt ume al tho or alung BT sses utho exder aig eyrds ume al tho or alung BT sses, errpoon, minctor, a- An analysis is presented describing a numerical algorithm


    Original     		AN-7520 calculation of IGBT snubber fairchild nomenclature A150 AN-7520 HGTG30N60B3 HGTG40N60B3 IGBT ac switch circuit mathcad failure analysis IGBT IGBT JUNCTION TEMPERATURE CALCULATION PDF

    hcpl-322j

    Abstract: hcpl 322j
    Text: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA50JT12-247 O-247AB GA50JT12 00E-47 26E-28 75E-9 57E-9 00E-3 hcpl-322j hcpl 322j PDF

    calculation of IGBT snubber

    Abstract: IGBT JUNCTION TEMPERATURE CALCULATION failure analysis IGBT IGBT ac switch circuit IGBT snubber VF25 A150 AN75 power factor correction boost topology HGTG30N60B3
    Text: Numerical Method for Evaluating IGBT Losses Application Note January 2000 AN-7520 Authors: Alain Laprade and Ron H. Randall /Title AN75 0 Subect Nume ical etho for valuting GBT osse ) Autho Alexnder raig) Keyords Nume ical etho for valuting GBT osse , nteril


    Original     		AN-7520 calculation of IGBT snubber IGBT JUNCTION TEMPERATURE CALCULATION failure analysis IGBT IGBT ac switch circuit IGBT snubber VF25 A150 AN75 power factor correction boost topology HGTG30N60B3 PDF

    40E06

    Abstract: 80E06
    Text: How to use the Transient thermal models Harris Semiconductor The transient thermal impedance models available from HARRIS semiconductor provide the user with a simple method to estimate the junction temperature rise under a transient condition. The models will


    Original     		4E-05 6E-05 0E-04 40E06 80E06 PDF

    amplifier HS 9004

    Abstract: AN9102 AN7275 CA3130 spice AN7326 ICL7103A Replacement CA3079 Low Cost Digital Panel Meter Designs 9012 TRANSISTOR REPLACEMENT SE 660001
    Text: DATA ACQUISITION 18 HOW TO USE HARRIS AnswerFAX What is AnswerFAX? AnswerFAX is Harris’ automated fax response system. It gives you on-demand access to a full library of the latest data sheets, application notes, and other information on Harris products.


    OCR Scan     		HA-5104 HA-5112 HA-5114 HA-5127 HA-5137 HA-5147 HA-5190 HA-5221/22 MM5033 MM5101 amplifier HS 9004 AN9102 AN7275 CA3130 spice AN7326 ICL7103A Replacement CA3079 Low Cost Digital Panel Meter Designs 9012 TRANSISTOR REPLACEMENT SE 660001 PDF

    DT94-15

    Abstract: ir21xx SCR gate drive circuit 3 phase IGBT inverter design by ir2130 HEXFEt Power MOSFET Design Guide 3 phase dc control ir2130 HV Floating MOS-Gate Driver circuits GBAN-PVI-1 DT-93-4 AN-948
    Text: App. Notes Design Tips Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Revised Application Notes and Design Tips INT-936 Title (and topic, if necessary) Document# Pages Date The Do's and Don'ts of Using MOS-Gated Transistors


    Original     		INT-936 AN-936) INT-937 Jun-96 Oct-98 DT94-15 ir21xx SCR gate drive circuit 3 phase IGBT inverter design by ir2130 HEXFEt Power MOSFET Design Guide 3 phase dc control ir2130 HV Floating MOS-Gate Driver circuits GBAN-PVI-1 DT-93-4 AN-948 PDF

    IGBT inverter wind turbine

    Abstract: ACPL-M61L solar farm design wind Charge Controller wind turbine wind Charge Controller wind turbine ACPL-064L DC to 3 phase wind turbine inverter HFBR-1414z hfbr-2521z
    Text: Fiber Optic and Isolation Solutions for Renewable Energy Applications Your Imagination, Our Innovation Sense • Illuminate • Connect Avago Technologies offers a wide range of fiber optic transmitters, receivers, and transceivers, and IGBT/ Power MOSFET gate drivers, and optocoupler isolation


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    Spice Model for TMOS Power MOSFETs

    Abstract: spice model dc motor AR301 AN569 in Motorola Power Applications Power MOSFET Cross Reference Guide an913 Motorola EB142 AN913 TMOS POWER MOSFETs mosfet SOA testing EB142 motorola
    Text: Motorola TMOS Power MOSFET and IGBT Application Literature Application Notes AN569 AN843 AN876 AN913 AN929 AN976 A N 1000 AN 1001 A N 1040 AN1043 AN1046 AN1078 AN1083 AN1090 AN1101 AN1102 AN1108 AN1300 AN1301 Transient Thermal Resistance — General Data and Its Use


    OCR Scan     		AN569 AN843 AN876 AN913 AN929 AN976 OT-223 EB123 EB142 OT223PAK/D Spice Model for TMOS Power MOSFETs spice model dc motor AR301 AN569 in Motorola Power Applications Power MOSFET Cross Reference Guide an913 Motorola AN913 TMOS POWER MOSFETs mosfet SOA testing EB142 motorola PDF

    uc3845 SCHEMATIC smps

    Abstract: flyback MC34063 mc34063 flyback uc3845 power supply schematic flyback smps uc3845 uc3845 schematic MC34063 MOSFET UC3845 spice model MC34063 current source application notes mc34063
    Text: MOTOROLA Order this document by AN1689/D SEMICONDUCTOR APPLICATION NOTE AN1689 Motorola's Solutions for Very Low Power in Standby Mode in Switchmode Power Supplies Christophe BASSO, MOTOROLA SPS, Toulouse Center Avenue Eisenhower,BP–1029, Le Mirail, 31023 Toulouse Cedex France


    Original     		AN1689/D AN1689 R38010 uc3845 SCHEMATIC smps flyback MC34063 mc34063 flyback uc3845 power supply schematic flyback smps uc3845 uc3845 schematic MC34063 MOSFET UC3845 spice model MC34063 current source application notes mc34063 PDF

    IRAMX16UP60A

    Abstract: SPACE VECTOR MODULATION shunt resistor current motor igbt spice svm and sinusoidal comparison pspice high frequency igbt 3phase inverter space vector modulation inverter powersystems
    Text: Application-Specific Current Rating of Advanced Power Modules for Motion Control Andrea Gorgerino; Alberto Guerra International Rectifier - 233 Kansas St., El Segundo, CA 90245 As presented at Powersystems World, Nov 03 Abstract With the advent of new energy efficiency


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    Untitled

    Abstract: No abstract text available
    Text: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA06JT12-247 O-247AB GA06JT12 08E-47 26E-28 73E-10 86E-10 90E-2 PDF