IGBT loss calculate
Abstract: No abstract text available
Text: n j] DN-57 b U N IT R O D E Design Note Power Dissipation Considerations for the UC3726N/UC3727N IGBT Driver Pair by Mickey McClure Application Engineer Motion Control Products Optimized or driving Insulated Gate Bipolar Transis tors (IGBTs , the UC3726N/UC3727N IGBT driver
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DN-57
UC3726N/UC3727N
UC3726N
UC3727N
UC3726/UC3727
U-143C)
U-143C.
15kHz
UC3726N,
IGBT loss calculate
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MP6754
Abstract: No abstract text available
Text: T O SH IB A MP6754 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MP6754 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage
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MP6754
961001EAA2
MP6754
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage
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MG50Q6ES40
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S5J53
Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction
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200-V
400J101H
MG75J1BS11
MG25J1B511
MG50J1BS11
MG100J1BS11
MG150J1BS11
MG25Q1BS11
MG50Q1BS11
MG75Q1BS11
S5J53
MIG30J103H
200J2
S5J25
mg7502ys
MG150J1JS50
MIG100Q201H
GT60M301
MIG30J103HB
MP6753
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG150J7KS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 150J7KS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • • The Electrodes are Isolated from Case. High Input Impedance 7 IGBTs Built into 1 Package.
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MG150J7KS50
150J7KS50
6o----12
16o----
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MP6751 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MP6751 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage
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MP6751
001EAA2
TjS125
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MG15H6ES1
Abstract: No abstract text available
Text: MG15H6ES1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER S W I T C H I N G APPLICATIONS. Unit in mm M O T O R C O N T R O L A P P LICATIONS. . The Electrodes are Isolated from Case. . 6 IGBTs are Built: Into 1 Package. . Enhancement-Mode . Low Saturation Voltage
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MG15H6ES1
MG15H6ES1
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Untitled
Abstract: No abstract text available
Text: MG100J7KS50 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100J7KS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • The Electrodes are Isolated from Case. High Input Impedance 7 IGBTs Built into 1 Package. Enhancement-Mode
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MG100J7KS50
961001EAA1
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gt50j341
Abstract: No abstract text available
Text: GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) Sixth generation (2)
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GT50J341
gt50j341
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Untitled
Abstract: No abstract text available
Text: GT40J325 Discrete IGBTs Silicon N-Channel IGBT GT40J325 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.
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GT40J325
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GT50MR21
Abstract: IGBT application notes
Text: GT50MR21 Discrete IGBTs Silicon N-Channel IGBT GT50MR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)
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GT50MR21
GT50MR21
IGBT application notes
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GT250101
Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
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2-99A1A
2-99B1A
GT250101
MG150J2YS40
MG75Q2YS11
MG400Q1US11
MG200Q1JS9
MG75J2YS40
MG50J6ES40
MG200Q2YS91
MG75J6ES40
mg100q2ys9
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Untitled
Abstract: No abstract text available
Text: APT45GR65BSCD10 APT45GR65BSCD10 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and
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APT45GR65BSCD10
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APT60GT60BR
Abstract: APT60GT60SR
Text: APT60GT60BR_SR APT60GT60BR APT60GT60SR 600V Thunderbolt IGBT B T The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
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APT60GT60BR
APT60GT60BR
APT60GT60SR
150KHz
APT60GT60SR
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APT30GT60KR
Abstract: APT30GT60KRG
Text: TYPICAL PERFORMANCE CURVES APT30GT60KR G 600V APT30GT60KR APT30GT60KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO-220 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT30GT60KR
APT30GT60KR
APT30GT60KRG*
O-220
100KHz
APT30GT60KRG
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APT60GT60JR
Abstract: No abstract text available
Text: APT60GT60JR 600V Thunderbolt IGBT 93A E E The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. 27 2 T- C G SO "UL Recognized"
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APT60GT60JR
150KHz
APT60GT60JR
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APT10035LLL
Abstract: APT100GT120JRDL
Text: 1200V APT100GT120JRDL G *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.
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APT100GT120JRDL
E145592
APT10035LLL
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APT30GT60BRDL
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES APT30GT60BRDL G 600V APT30GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers
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APT30GT60BRDL
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IGBT THEORY AND APPLICATIONS 400V
Abstract: TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861
Text: Application Note AN-1086 BVCES Testing Considerations for Ultra-thin wafer B B Depletion Stop Trench IGBTs By Chiu Ng, Al Diy, Alberto Fernandez, Vijay Bolloju Table of Contents Page
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AN-1086
1628/D.
IGBT THEORY AND APPLICATIONS 400V
TEK 370A
tesec
IGBT THEORY AND APPLICATIONS
bj transistor igbt
high voltage pnp transistor 700v
jfet curve tracer
short circuit tracer schematic
bipolar transistor tester
AN10861
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80c210
Abstract: robot control
Text: MWI 150-06 A8 Advanced Technical Information IC25 = 170 A = 600 V VCES VCE sat typ. = 2.0 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 1 2 5 6 9 10 19 17 15 3 4 7 8 11 12 14, 20 IGBTs Features NPT IGBT technology low saturation voltage
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D-68623
Abstract: No abstract text available
Text: VWI 6-12P1 IC25 IGBT Module VCES VCE sat typ. Sixpack in ECO-PAC 2 S9 Preliminary data L9 N5 =6A = 1200 V = 3.9 V K 12 N9 R5 NTC X 18 W 14 J 13 A5 D5 H5 A1 F3 C1 K 10 G1 Pin arrangement see outlines Features IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 150°C
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6-12P1
B25/50
D-68623
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robot control
Abstract: 200-06A8
Text: MWI 200-06 A8 Advanced Technical Information IC25 = 225 A = 600 V VCES VCE sat typ. = 2.0 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 1 2 5 6 9 10 19 17 15 3 4 7 8 11 12 14, 20 Features IGBTs ● Symbol Conditions VCES TVJ = 25°C to 150°C
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60N60C2
Abstract: ixgh60n60c2
Text: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20
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60N60C2
IC110
O-247
O-268
728B1
123B1
728B1
065B1
60N60C2
ixgh60n60c2
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INFORMATION OF IC 7424
Abstract: APT75GP120B2
Text: APT75GP120B2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT75GP120B2
INFORMATION OF IC 7424
APT75GP120B2
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