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    IGSS 100NA VGS 0V Search Results

    IGSS 100NA VGS 0V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPS61299QDRLRQ1 Texas Instruments 100nA Iq 5.5V boost converter with input current limit and fast transient performance 6-SOT-5X3 -40 to 125 Visit Texas Instruments
    CSD17505Q5A Texas Instruments 30V, N-Channel NexFET™ Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150 Visit Texas Instruments Buy
    CSD17501Q5A Texas Instruments 30V, N-Channel NexFET™ Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150 Visit Texas Instruments Buy
    CSD17506Q5A Texas Instruments 30V, N-Channel NexFET™ Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150 Visit Texas Instruments Buy
    CSD17510Q5A Texas Instruments 30V N-Channel Low Side NexFET Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150 Visit Texas Instruments Buy

    IGSS 100NA VGS 0V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    LND150N8 equivalent

    Abstract: depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.


    Original     		LND150 O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA LND150N8 equivalent depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET PDF

    MOSFET IGSS 100nA VDS 20V

    Abstract: N-Channel Depletion-Mode MOSFET depletion n-channel mosfet to-92 N CHANNEL DEPLETION MOSFET N-Channel Depletion-Mode MOSFET high voltage TO-243AA 1000 volt mosfet to-92 depletion 400V power mosfet LND150N3 LND150N8
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.


    Original     		LND150 O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA MOSFET IGSS 100nA VDS 20V N-Channel Depletion-Mode MOSFET depletion n-channel mosfet to-92 N CHANNEL DEPLETION MOSFET N-Channel Depletion-Mode MOSFET high voltage TO-243AA 1000 volt mosfet to-92 depletion 400V power mosfet LND150N3 LND150N8 PDF

    LND250

    Abstract: LND250K1 n-channel 500v sot 23 Power MOSFET MOSFET IGSS 100nA VDS 20V
    Text: LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) Order Number / Package Product marking for SOT-23: TO-236AB* NDE❋ 500V 1.0KΩ 1.0mA LND250K1 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


    Original     		LND250 OT-23: O-236AB* LND250K1 OT-23. LND250 LND250K1 n-channel 500v sot 23 Power MOSFET MOSFET IGSS 100nA VDS 20V PDF

    MOSFET IGSS 100nA VDS 20V

    Abstract: N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET 20V N-Channel Depletion-Mode MOSFET depletion mode ramp generator depletion MOSFET n mosfet depletion MOSFET N SOT-23 n channel depletion MOSFET power relay N-channel mosfet
    Text: LND250 Preliminary N-Channel Depletion-Mode MOSFET Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) Order Number / Package Product marking for SOT-23: TO-236AB* NDE❋ 500V 1.0KΩ 1.0mA LND250K1 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


    Original     		LND250 OT-23: O-236AB* LND250K1 OT-23. MOSFET IGSS 100nA VDS 20V N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET 20V N-Channel Depletion-Mode MOSFET depletion mode ramp generator depletion MOSFET n mosfet depletion MOSFET N SOT-23 n channel depletion MOSFET power relay N-channel mosfet PDF

    transistor marking code 12W 12

    Abstract: LN1E mosfet marking 12W LND150 LND150N3 LND150N8 LND150ND iGSS 100nA Vgs 0v depletion n-channel mosfet to-92 MOSFET IGSS 100nA VDS 20V
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E Where = 2-week alpha date code * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.


    Original     		LND150 O-243AA: O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA transistor marking code 12W 12 LN1E mosfet marking 12W LND150 LND150N3 LND150N8 LND150ND iGSS 100nA Vgs 0v depletion n-channel mosfet to-92 MOSFET IGSS 100nA VDS 20V PDF

    ln1e

    Abstract: depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E❋ * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.


    Original     		LND150 O-243AA: O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA ln1e depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND PDF

    N-Channel Depletion-Mode MOSFET

    Abstract: MOSFET IGSS 100nA VDS 20V NDE SOT23 MARKING LND250 LND250K1 iGSS 100nA Vgs 0v DATE CODE FOR SUPERTEX n-channel 500v sot 23 Power MOSFET
    Text: LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) Order Number / Package Product marking for SOT-23: TO-236AB* NDE❋ 500V 1.0KΩ 1.0mA LND250K1 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


    Original     		LND250 OT-23: O-236AB* LND250K1 OT-23. N-Channel Depletion-Mode MOSFET MOSFET IGSS 100nA VDS 20V NDE SOT23 MARKING LND250 LND250K1 iGSS 100nA Vgs 0v DATE CODE FOR SUPERTEX n-channel 500v sot 23 Power MOSFET PDF

    K3050

    Abstract: 1A 300V TRANSISTOR 2A marking transistor 2SK3050 month marking "Field Effect Transistor" 300V switching transistor 91208-01001 Diode Marking N iGSS 100nA Vgs 0v
    Text: PRODUCTS CPT3 TYPE PAGE 1/3 2SK3050 1. TYPE 2SK3050 2. STRUCTURE SILICON Ｎ-CHANNEL MOS FIELD EFFECT TRANSISTOR 3. APPLICATIONS SWITCHING 4. ABSOLUTE MAXIMUM RATINGS [Ta=25℃] DRAIN-SOURCE VOLTAGE VDSS ・・・ 600V GATE-SOURCE VOLTAGE IGSS ・・・ ±30V


    Original     		2SK3050 PW10s TSZ22111 25/WIGSS 00A/uS 460nS TSQ03019-108-E00 K3050 K3050 1A 300V TRANSISTOR 2A marking transistor 2SK3050 month marking "Field Effect Transistor" 300V switching transistor 91208-01001 Diode Marking N iGSS 100nA Vgs 0v PDF

    FET marking code ndew

    Abstract: No abstract text available
    Text: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		LND250 DSFP-LND250 A091208 FET marking code ndew PDF

    Untitled

    Abstract: No abstract text available
    Text: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		LND250 DSFP-LND250 A103108 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. LND250 N-Channel Depletion-Mode DMOS FET General Description Features ► ► ► ► ► ► ► Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS


    Original     		LND250 LND250 DSFP-LND250 B012314 PDF

    transistor marking code 12W SOT-23

    Abstract: No abstract text available
    Text: Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS


    Original     		LND150 LND150 DSFP-LND150 C041114 transistor marking code 12W SOT-23 PDF

    transistor marking code 12W SOT-23

    Abstract: 12w SOT 23 package marking code marking 12W SOT23 LND150 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		LND150 LND150 DSFP-LND150 A030609 transistor marking code 12W SOT-23 12w SOT 23 package marking code marking 12W SOT23 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150 PDF

    transistor marking code 12W SOT-23

    Abstract: 12w SOT 23 package marking code marking 12W SOT23 12w marking code sot 23 LN1E 12w marking code sot23 12W MARKING sot23 12w marking code of transistor sot 23 sot-23 marking 12w 12w sot-23
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS


    Original     		LND150 LND150 DSFP-LND150 A051909 transistor marking code 12W SOT-23 12w SOT 23 package marking code marking 12W SOT23 12w marking code sot 23 LN1E 12w marking code sot23 12W MARKING sot23 12w marking code of transistor sot 23 sot-23 marking 12w 12w sot-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: TT TOSHIBA -CDISCRETE/OPTO} De J t D^SSD 99D 16737 9097250 TOSHIBA <DISCRETE/OPTO G01b737 7 D r - 5J - 1S $)ìhì h < TOSHIBA SEMICONDUCTOR FIELD EFFECT TRANSISTOR 2 S K 6 7 h TECHNICAL DATA SILICON N C H ANNEL MOS TYPE 7T-MOS I ) TENTATIVE INDUSTRIAL APPLICATIONS


    OCR Scan     		G01b737 100nA 300uA 10Ovr 00A/us PDF

    FET marking code ndew

    Abstract: LND250 n-channel SOT-23 Depletion Mode LND150k1-G 125OC LND250K1-G depletion mode ramp generator Diode Marking ef
    Text: LND250 Features ► ► ► ► ► ► ► R fo R ef r e er N co ew m to m LN De e n s D i d 15 gn e d 0 s K 1G N-Channel Depletion-Mode DMOS FET General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability


    Original     		LND250 LND250 DSFP-LND250 A012809 FET marking code ndew n-channel SOT-23 Depletion Mode LND150k1-G 125OC LND250K1-G depletion mode ramp generator Diode Marking ef PDF

    LN1E

    Abstract: Marking code mps
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		LND150 DSFP-LND150 A0912908 LN1E Marking code mps PDF

    LN1E

    Abstract: No abstract text available
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		LND150 DSFP-LND150 A10310808 LN1E PDF

    transistor marking code 12W SOT-23

    Abstract: marking 12W SOT23 12w SOT 23 package marking code 12w marking code sot 23 12W MARKING sot23 12w marking code sot23 LN1E LND150k1-G 12w 08 12w marking code of transistor sot 23
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS


    Original     		LND150 LND150 DSFP-LND150 B021110 transistor marking code 12W SOT-23 marking 12W SOT23 12w SOT 23 package marking code 12w marking code sot 23 12W MARKING sot23 12w marking code sot23 LN1E LND150k1-G 12w 08 12w marking code of transistor sot 23 PDF

    40822

    Abstract: No abstract text available
    Text: LND150 N-Channel Depletion-Mode DMOS FET General Description Features The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown Low power drive requirement


    Original     		LND150 LND150 DSFP-LND150 B021110 40822 PDF

    160V 30A TRANSISTOR

    Abstract: power transistor 200V, 30A
    Text: TOSHIBA { D I S C R E T E / O P T O 9097250 ¿Toshiba T O S H IB A TT < D IS C R E T E / O P T O > DE | l C H 7 a S D D01bflD4 7 |~~ 99D 16804 D T -3 q -\3 TOSHIBA FIE LD EFFECT TRANSISTOR YT F 2 5 0 SIL IC O N N CHANNEL MOS TYPE ff-M OS I SEMICONDUCTOR


    OCR Scan     		D01bflD4 250uA 250uA 00A/us 160V 30A TRANSISTOR power transistor 200V, 30A PDF

    Untitled

    Abstract: No abstract text available
    Text: TT TOSHIBA {DISCRETE/OPTO} D e | ‘ì D c17E5D QülbûlO 5 99D 16810 9097250 TOSHIBA <DISCRETE/OPTO ¿fasìubt SEMICONDUCTOR TOSHIBA DT-S^-lS FIELD EFFECT TRANSISTOR Y T F 2 5 3 SILICON N C H A NNEL MOS TYPE TECHNICAL DATA 71 -MOS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		c17E5D 100nA 250uA 00A/ys PDF

    IRFC43N50KB

    Abstract: IRFPS43N50K Power MOSFET Wafer 082S
    Text: PD - 94242 IRFC43N50KB D HEXFET Power MOSFET Die in Wafer Form 500V RDS on =0.090Ω 6" Wafer G S Electrical Characteristics Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance


    Original     		IRFC43N50KB 100nA IRFC43N50KB IRFPS43N50K Power MOSFET Wafer 082S PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPE PRODUCTS TO-220FM PAGE RCX510N25 1.TYPE RCX510N25 2.STRUCTURE SILICON N-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 1/4 4.ABSOLUTE MAXIMUM RATINGS [Ta=25℃] DRAIN-SOURCE VOLTAGE VDSS ・・・ 250V GATE-SOURCE VOLTAGE VGSS ・・・ ±30V DRAIN CURRENT


    Original     		O-220FM RCX510N25 13oC/W TSQ03050-RCX510N25 RCX510 TSZ22111ï PDF