im 358 micro
Abstract: CMA3000 mems
Text: PRESSEMITTEILUNG - 25. Oktober 2010 VTI expandiert mit Konsumer Gyroskopen und Timing Devices MEMS-Pionier mischt Wachstumsmärkte auf VTI Technologies, ein Micro-Electro-Mechanical Systems-Pionier MEMS mit 20 Jahren Erfahrung, orientiert sich neu und erweitert mit dem Einstieg in das Segment Konsumer-Elektronik seine Zielmärkte.
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electronica
Abstract: im 358 micro CMR3000 drehratensensor
Text: PRESSEMITTEILUNG 8 November 2010 Kleiner, schlanker, schlagkräftiger - VTI stellt den kleinsten und stromsparendsten 3-achsigen Drehratensensor vor Für die Sensierung von Bewegungen in Konsumer-Elektronik-Applikationen stellte VTI Technologies am heutigen Tage auf der Electronica 2010 in München mit dem CMR3000 den weltweit kleinsten digitalen 3achsigen Drehratensensor mit geringstem Energieverbrauch vor.
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CMR3000
electronica
im 358 micro
drehratensensor
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ali 3606
Abstract: FZS1AL06 D-65205 78050 V ADC122S101 DP83848 LM5072 MCF5329 MCF532X COBRA5329KIT
Text: Dragonfire Reference Platform presented by EBV Elektronik Version 2 Dragonfire Reference Platform presented by EBV Elektronik Timed to coincide with the market launch of Freescale The DragonFire display kit can be connected directly to the Semiconductor’s DragonFire microprocessor-family MCF532x,
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MCF532x,
COBRA5329.
FZS1AL06
ali 3606
FZS1AL06
D-65205
78050 V
ADC122S101
DP83848
LM5072
MCF5329
MCF532X
COBRA5329KIT
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api 662
Abstract: im 358 micro P160R-XXXKS 222KS
Text: DC IN C CU REM RR E EN NTA T L m A BE R* IN DU ±1 CT 0% A N @ CE 1 0 (µ 0 H) kH z DC M RES AX I IM STA UM N C (O E hm s) CU R M RE AX N .( TR m A A TI DC NG ) Power Micro i Chip Inductors NU M P160R P160 DA SH Series SERIES P160 FERRITE CORE Physical Parameters
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-331KS
-391KS
-471KS
-561KS
-681KS
-821KS
-102KS
-122KS
-152KS
-182KS
api 662
im 358 micro
P160R-XXXKS
222KS
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Untitled
Abstract: No abstract text available
Text: micRouiRVE comportEfiTs D C to 15GHz □ R F Coaxial Sw itches C L 358 GENERAL FEATURES These H C S-2 series coaxial switches are S P D T single-pole double-throw failsafe type with HRM resistance. The MTTF is greater than 100,000 (cycles . (S M A ) connections. They are an im provem ent o f the
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15GHz
C11-14V
120mA
DC11-14V
DC18--
DC24-30V
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Untitled
Abstract: No abstract text available
Text: PACKAGE OUTLINES Page SOTIOO 348 SOT122A 349 SOT422A 350 SOT423A 351 SOT437A 352 SOT439A 353 SOT440A 354 SOT441A 355 SOT442A 356 SOT443A 357 SOT445A 358 SOT445B 359 SOT446A 360 SOT447A 361 SOT448A 362 SOT469A 363 Philips Semiconductors Microwave transistors
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OT122A
OT422A
OT423A
OT437A
OT439A
OT440A
OT441A
OT442A
OT443A
OT445A
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Untitled
Abstract: No abstract text available
Text: MICRO QUADLOK SYSTEM t i f c a j Electronics Application Specification Crânping Corxlrtion of S tx ^ Coitaci Ftexibie-WireType 114-18021-3 AM P _ C 7 1 30MAY03 REV.A _ T f'ïï-ïa y 'J-W R it AMP Amtbtc7?'}>r-:/3y'J-iM ‘%&mL. h' lû lc I i& fiE è ftü - ttA / c
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30MAY03
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Simple Circuit Diagram of 230V to 3V Voltage Converter
Abstract: BP5Q41
Text: Regulator ICs AC/DC converter unit BP5041 The BP5041 is an A C / DC converter which can be used to supply + 1 2V, 100mA DC output from a commercial pow er supply 200 to 230V AC . Using this unit enables simple, easy drive of microcomputers, LEDs, and other electron
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BP5041
BP5041
100mA
Simple Circuit Diagram of 230V to 3V Voltage Converter
BP5Q41
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1402 Transistor
Abstract: transistor 1402 M107 SD1402
Text: H /is 'n m n n * -* . n arar» S I r / l C l U O v l f 11 P ro g re s s P o w e re d b y T ec h no log y Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 SD1402 RF & MICROWAVE TRANSISTORS 860-960MHZ CLASS C, MOBILE APPLICATION CLASS C TRANSISTOR
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860-960MHZ
870MHz
SD1402
SD1402
800MHz
150mA
f-870MHz
870MHz
1402 Transistor
transistor 1402
M107
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2904N
Abstract: IC LM 358 LM 358 st 2904 lm 358 ic IC LM 258 LM 358 opamp 358a lm 538 n ic lt 2904
Text: g ì SCS-THOMSON lm i 58,a-lm258,a IlLitm «! LM358,A-LM2904-NE532 LOW POWER DUAL OPERATIONAL AMPLIFIERS INTERNALLY FREQUENCY COMPENSATED. LARGE DC VOLTAGE GAIN : 100 dB WIDE BANDWIDTH unity gain : 1.1 MHz (tem perature compensated) VERY LOW SUPPLY CURRENT/AMPLI
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a-lm258
LM358
-LM2904-NE532
-2904-N
2904N
IC LM 358
LM 358
st 2904
lm 358 ic
IC LM 258
LM 358 opamp
358a
lm 538 n ic
lt 2904
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Firmware ir 8500
Abstract: D12Test circuit diagram for scsi to usb D12FW auo 002 c 33740 B341 DIP28 PDIUSBD12 S028
Text: The P D I U S B D I 2 is a high perform ance, cost and featureoptimized U S B interface device. Com m unicating with a system microcontroller using a high speed general purpose parallel P D I U S B D 12 high-speed U S B periphe ral interface interface, it is easily integrated into existing systems, cutting down
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SBD12
Firmware ir 8500
D12Test
circuit diagram for scsi to usb
D12FW
auo 002
c 33740
B341
DIP28
PDIUSBD12
S028
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IC LM 258
Abstract: No abstract text available
Text: r = ± 7 Z S G S - T H O M S O N # M Q (M [iy i ïï[M O (D S l m i 5 8 , a - l m 2 5 8 , a L M 3 5 8 ,A -L M 2 9 0 4 -N E 5 3 2 LOW POWER DUAL OPERATIONAL AMPLIFIERS . INTERNALLY FREQUENCY COMPENSATED. • LARGE DC VOLTAGE GAIN : 100 dB ■ W IDE BANDWIDTH (unity gain : 1.1 MHz (tem
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UE532
-2904-N
IC LM 258
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SOT422A
Abstract: BLS3135-65
Text: DISCRETE SEMICONDUCTORS BITÂ SIH]H T BLS3135-65 Microwave power transistor P relim inary specification Philips Semiconductors 1999 A p r 28 PHILIPS Philips Semiconductors Preliminary specification Microwave power transistor BLS3135-65 PINNING - SOT422A FEATURES
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BLS3135-65
OT422A
SOT422A
BLS3135-65
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1N5411
Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal
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CON-46
O-104
14-Lead
16-Lead
12-Lead
16-Lead
O-220AB
1N5411
npn transistor RCA 467
CD4004T
CA3051
CD4001D
40468A
RCA 40822
40664 SCR
rca 40583
2N5756
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MA4M2010
Abstract: 20 pf capacitor M1200
Text: MA4M Series M N S Microwave Chip Capacitors Features • EXCELLENT REPEATABILITY WAFER TO WAFER AND LOT TO LOT ■ SMALL SIZE ■ LOW LOSS ■ AVAILABLE WITH ROUND AND SQUARE BONDING PADS Description The MA4M series of MNS (metal-nitride-silicon) silicon chip
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MIL-STD-883B
MA4M2010
20 pf capacitor
M1200
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8870 dtmf decoder
Abstract: cmd 8870 dtmf 8870 DTMF circuit 65SC15 BD2000 dtmf 8870 DTMF DECODER 8870 bc7000 8870 dtmf 00-D7
Text: G65SC151 Standard Option c m d Microcircuits_ _ ADV-CMOS Communications Terminal Unit Telecommunication Microcomputer Features General Description • S ta n d a rd O p tio n to th e G 6 5S C 150 C o m m u n ic a tio n s T e rm in a l
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G65SC151
G65SC150
DTMF40
DTMF60
65SC151
8870 dtmf decoder
cmd 8870 dtmf
8870 DTMF circuit
65SC15
BD2000
dtmf 8870
DTMF DECODER 8870
bc7000
8870 dtmf
00-D7
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l85c
Abstract: L 358 l358
Text: miCROUJAVE COmPOflEílTS DC to R F Mobile Switches MS 1GHz □ GENERAL FEATURES Mobile Switches (M S) are compact and inexpen sive coaxial switches designed for the inspection of □ the internal output of portable telephone terminals. i _i M A T ER IA L* F IN ISH
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MS-135-C
S-135
MS-135
MS-I35-C
l85c
L 358
l358
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IN456
Abstract: 1n3321 1N3320B 1N3341B
Text: 1N 3 3 05 thru 1N 3350B and Microsemi Corp. SANTA ANA, CA j /ri,*,*,«« SCOTTSDALE, AZ / For more information call: / 1N4549B thru iM A C K ftB • 5 5 0 B 602 941-6300 FE A T U R E S SILICON 50 WATT ZENER DIODES • ZENER VOLTAGE 3.9 TO 200V • LOW ZENER IMPEDANCE
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1N4549B
3350B
1N4549B
IN45606
MN4S618
1N4552B
1N45530
1N4554B
1N45556
1N4556B
IN456
1n3321
1N3320B
1N3341B
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Untitled
Abstract: No abstract text available
Text: MLL5913 thru MLL5956 Microsemi Corp. ? A-IV/I tub ftotiti experts 1V4 f t SCO rrSD ALE , 4 / h>i im*ie information call (61 2) 941-6300 D E S C R IP T IO N / F E A T U R E S LEADLESS GLASS ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT TECHNOLOGY • IDEAL FOR HIGH DENSITY MOUNTING
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MLL5913
MLL5956
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor
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RX1214B170W
7/00/02/pp12
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 19 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor
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RX1214B300Y
RX1214B300Y
OT439A
7/00/02/pp12
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J122
Abstract: R358 D35B SAB10 8870 DTMF circuit D35B 60 G65SC150 G65SC151 DTMF 8870 BC4000
Text: G65SC151 Standard Option Microcircuits_ ADV-CMOS Communications Terminal Unit Telecommunication Microcomputer Features General Description • Standard O p tio n to the G65SC150 C o m m u n ica tio n s Term inal U nit (C TU ) • G enerates sign a ls c o m p a tib le w ith sw itche d telep h o ne
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G65SC151
G65SC150
cTMF60
OTMF80
DTMF35
DTMF40
65SC151
J122
R358
D35B
SAB10
8870 DTMF circuit
D35B 60
DTMF 8870
BC4000
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LM358 definition
Abstract: LM358S LM258 LM2904N-8 lm2904n LM358AM lm2904s LM358 drift voltage LM2904 LM358AN
Text: LM258/A, LM358/A, LM2904 DUAL OPERATIONAL AMPLIFIER DUAL OPERATIONAL AMPLIFIERS The LM 258 series consists of four independent, high gain, internally Frequency com pensated operational am plifiers w hich w ere designed specifically to operate from a single pow er supply over a w ide range
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LM258/A,
LM358/A,
LM2904
LM258
100dB
LM358 definition
LM358S
LM2904N-8
lm2904n
LM358AM
lm2904s
LM358 drift voltage
LM358AN
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor FEATURES D iffused em itter ballasting resistors providing excellent cu rre n t sharing
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LLE18040X
125002/00/02/pp12
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