1N963B
Abstract: MARKING 182 DO-35 zener diode IN 963 B zener diode
Text: 1N957B - 1N979B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Value 500 Units mW 4.0 mW/°C -65 to +200
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1N957B
1N979B
1N979B
DO-35
1N958B
1N959B
1N960B
1N961B
1N963B
MARKING 182 DO-35 zener diode
IN 963 B zener diode
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Untitled
Abstract: No abstract text available
Text: TVS Diode Arrays SPA Family of Products General Purpose ESD Protection - SP1001 Series SP1001 Series - 8pF 15kV Unidirectional TVS Array Pb GREEN RoHS Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of
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SP1001
SP1001-02
SC70-3)
OT963
SP1001
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Untitled
Abstract: No abstract text available
Text: TVS Diode Arrays SPA Family of Products General Purpose ESD Protection - SP1001 Series SP1001 Series - 8pF 15kV Unidirectional TVS Array RoHS Pb GREEN Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of
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SP1001
SP1001-04
SP1001
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Untitled
Abstract: No abstract text available
Text: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1001 Series SP1001 Series - 8pF 15kV Unidirectional TVS Array RoHS Pb GREEN Description Pinout Features *SP1001-02 (SC70-3) *SP1001-04 (SC70-5) 1 1 5 3 2 4 SP1001-04 (SOT 553) 2 3 1 6 NC 2
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SP1001
SP1001-02
SC70-3)
SP1001-04
OT963
SP1001
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HE MARKING SC70-5
Abstract: SP1001-05VTG
Text: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1001 Series SP1001 Series - 8pF 15kV Unidirectional TVS Array RoHS Pb GREEN Description Pinout Features *SP1001-02 (SC70-3) *SP1001-04 (SC70-5) 1 1 5 3 2 4 5 2 3 1 6 NC 2 5 2 3 4 NC *SP1001-05
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SP1001
SP1001-02
SC70-3)
SP1001-04
OT963
SP1001
HE MARKING SC70-5
SP1001-05VTG
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Untitled
Abstract: No abstract text available
Text: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1001 Series SP1001 Series - 8pF 15kV Unidirectional TVS Array RoHS Pb GREEN Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of
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Original
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SP1001
SP1001-02
SC70-3)
SP1T963
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PDF
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Untitled
Abstract: No abstract text available
Text: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1001 Series SP1001 Series - 8pF 15kV Unidirectional TVS Array RoHS Pb GREEN Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of
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Original
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SP1001
SP1001-02
SC70-3)
SP1T963
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PDF
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Untitled
Abstract: No abstract text available
Text: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1001 Series SP1001 Series - 8pF 15kV Unidirectional TVS Array RoHS Pb GREEN Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of
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Original
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SP1001
SP1001-02
SC70-3)
SP163
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PDF
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Untitled
Abstract: No abstract text available
Text: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1001 Series SP1001 Series - 8pF 15kV Unidirectional TVS Array RoHS Pb GREEN Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of
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SP1001
SP1001-02
SC70-3)
SP1T963
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semiconductor band color code
Abstract: 1n960b fairchild 1N965B 1N991B 1N967B 1N957B
Text: Absolute Maximum Ratings * Tolerance = 5% TA = 25°C unless otherwise noted Symbol PD Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” TJ, TSTG Operating and Storage Temperature Range Value 500 Units mW 4.0 mW/°C -65 to +200 °C Derate above 75°C
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1N957B
1N991B
DO-35
1N958B
1N959B
1N960B
1N961B
semiconductor band color code
1n960b fairchild
1N965B
1N991B
1N967B
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1N957B
Abstract: 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B 1N964B 1N991B
Text: Absolute Maximum Ratings * Tolerance = 5% TA = 25°C unless otherwise noted Symbol PD Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” TJ, TSTG Operating and Storage Temperature Range Value 500 Units mW 4.0 mW/°C -65 to +200 °C Derate above 75°C
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DO-35
1N957B
1N958B
1N959B
1N960B
1N961B
12pment.
1N957B
1N958B
1N959B
1N960B
1N961B
1N962B
1N963B
1N964B
1N991B
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Untitled
Abstract: No abstract text available
Text: WENRUN OPTOELECTRONIC CO., LTD. Technical Data Sheet LED Lamps •Customer: Technical Data Sheet PN: L□963□□ Series For: IF=20mA Contents 1.Features 2.Descriptions 3.Applications 4.Selection guide 5.Package dimensions 6.Absolute maximum rating 7.Electrical optical characteristics
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1N1318
Abstract: 1N1323 zener diode 1N961 1N1313 1N1356 IN946 1N938 1N939 1N957 1N958
Text: z z z zHoí Hzoí zHoi hOz ' rOzi' hzO ' H H H CO 9 O CO CO ^ O l O ' 01 r-i CM CO ^ ^ ^ 5 S S W V I cm ooo H Hró inrl cm cm co ooo ooo ooo ooo CO CO fO co co *5 150m w 10 watt Suffix A = 5% No Suffix z_ 10% Suffix A = 5% Suffix R = Rev. Polarity Diode typos presently available from Microsemi Corporation are shown in bold type.
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1N938Ã
1N939Ã
1N940I2)
1N94K2)
1N942I2)
1N943I2)
1N944I2
1N94512)
1N946I2)
1N957
1N1318
1N1323
zener diode 1N961
1N1313
1N1356
IN946
1N938
1N939
1N958
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1N958 zener diode
Abstract: zener diode 1N961 1N965 zener diode 1N1313 IN946 1N938 1N939 1N957 1N958 diode zener 1N985
Text: O l O ' 01 z z z H H H 5 5 5 5 S S CO 9 O r-i CM CO W V CO CO ^ ^ ^ ^ oí oí oi O ' O ' O ' z z z z z z H H h ri h Diode i 0.20 0.80 0.68 0.65 o o o OOO o o o in in in 500.0 500.0 500.0 125.0 150.0 185.0 230.0 270.0 330.0 400.0 500.0 750.0 900.0 1100.0
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OCR Scan
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1N938Ã
1N939Ã
1N940I2)
1N94K2)
1N942I2)
1N943I2)
1N944I2
1N94512)
1N946I2)
1N957
1N958 zener diode
zener diode 1N961
1N965 zener diode
1N1313
IN946
1N938
1N939
1N958
diode zener 1N985
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1N1313
Abstract: zener diode 1N961 IN946 IN961 RH944 1N938 1N939 1N957 1N958
Text: 5 5 5 CO 9 O CO CO ^ O l O ' 01 z z z 5 S S r-i CM CO W V ^ ^ ^ oí oí oi O ' O ' O ' z z z z z z H H H h ri h CM *T i 0.20 0.80 0.68 0.65 o o o OOO o o o in in in 500.0 500.0 500.0 30.0 30.0 30.0 i I Zener Voltage Tolerance No Suffix = 2 0 % Suffix A = 1 0 %
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OCR Scan
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1N938Ã
1N939Ã
1N940I2)
1N94K2)
1N942I2)
1N943I2)
1N944I2
1N94512)
1N946I2)
1N957
1N1313
zener diode 1N961
IN946
IN961
RH944
1N938
1N939
1N958
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sst211 sot-143
Abstract: No abstract text available
Text: FAST DMOS FET Switches N-Channel Enhancement-Mode caloric CO RP O RA TIO N \J SST211/ SST213/SST215 FEATURES DESCRIPTION • • • • • Designed for audio, video and high frequency applications, the SST211 Series is a high speed, ultra low capacitance
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SST211/
SST213/SST215
50Qtypycal
SST211
SST213
SST215
XSST211
SD211-215
sst211 sot-143
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gs 05 24 gd 2
Abstract: SST211 SST213
Text: FAST DMOS FET Switches N-Channel Enhancement-Mode C Q IO O IC \J CORPORATION SST211 /SST213/SST215 DESCRIPTION FEATURES • • • • • High Speed Switching. t d O N 1ns Low C apacitance. 2.4pF typical
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SST211
/SST213/SST215
SST213
SST215
XSST211
SD211-215
gs 05 24 gd 2
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Untitled
Abstract: No abstract text available
Text: SENITRON INDUSTRIES LTD 43E D • 013766^ QQQ01SQ 0 H S L C B T - n - z 3 SERIES L Transient Voltage Suppressor ■ Glass Passivated Junction Voltage Range 6.5 to 90 Volts ■ 1.5kW Peak Pulse Power 1.0 Watt Steady State ■ Low Capacitance PEAK POWER DERATING CURVE
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QQQ01SQ
DO-35
DO-41
DO-15
DO-201AD
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1N series ZENER DIODE 5 to 10 volt watt
Abstract: 1n2007 diode 1N2621 IN2049 zener diode 1N961 939B IN2806 in825 IN946 1N938
Text: 5 5 5 5 S S CO 9 O r-i CM CO W V CO CO ^ ^ ^ ^ O l O ' 01 z z z H H oí oí oi O ' O ' O ' z z z z z z H H H h ri h i o o o OOO o o o in in in 500.0 500.0 500.0 125.0 150.0 185.0 230.0 270.0 330.0 400.0 500.0 750.0 900.0 1100.0 1500.0 1700.0 2200.0 2500.0
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OCR Scan
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1N938Ã
1N939Ã
1N940I2)
1N94K2)
1N942I2)
1N943I2)
1N944I2
1N94512)
1N946I2)
1N957
1N series ZENER DIODE 5 to 10 volt watt
1n2007 diode
1N2621
IN2049
zener diode 1N961
939B
IN2806
in825
IN946
1N938
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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BUK7514-55
T0220AB
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diode 1n3433
Abstract: JANTX 1N3611 microsemi zener diode 1N961 1N3584 IN946 in960 zener diode 1N938 1N939 1N957 1N958
Text: 5 5 5 CO 9 O CO CO ^ O l O ' 01 z z z H H r-i CM CO ^ ^ ^ oí oí oi 5 S S W V z z z z z z H H H h ri h O' O' O' i CM C\j C\j cm cm co o o o OOO o o o in in in o o o 150.0 150.0 150.0 , 1 125.0 150.0 185.0 230.0 270.0 330.0 400.0 500.0 750.0 900.0 1100.0
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OCR Scan
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1N938Ã
1N939Ã
1N940I2)
1N94K2)
1N942I2)
1N943I2)
1N944I2
1N94512)
1N946I2)
1N957
diode 1n3433
JANTX 1N3611 microsemi
zener diode 1N961
1N3584
IN946
in960 zener diode
1N938
1N939
1N958
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transistor sd 965
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard ievel FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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OCR Scan
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BUK7528-55
T0220AB
transistor sd 965
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30n20
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance
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T0220AB
BUK7514-55
30n20
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PDF
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zener diode 1N PH 48
Abstract: zener diode 1N PH 53 1N3020-1 Diodo zener W diodo zener C 18 ph 1N1743 diode ziner 1N4202 ST 41 Diodo Zener 1N32B
Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART C ontaining all JEDEC re gistere d Zener diodes. This popular re fere nce cha rt contains high lig h t inform ation on all JEDEC registered Ze ner diode and re c tifie r types as w ell as M icrosem i types. The follow in g Codes are used:
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BZX83
BZX97
BZX98
BZY97
BZD10
BZW22
BZV40
500mW
DO-35
zener diode 1N PH 48
zener diode 1N PH 53
1N3020-1
Diodo zener W
diodo zener C 18 ph
1N1743
diode ziner
1N4202
ST 41 Diodo Zener
1N32B
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