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    INDALLOY 100 Search Results

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    indalloy 100

    Abstract: SN63 RFP-200-100RK
    Text: 200 Watts, 100 Ω Flangeless Resistors Model RFP-200-100RK Flangeless Resistors General Specifications Resistive Element: Substrate: Cover: Lead s : Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications


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    RFP-200-100RK MIL-E-5400. indalloy 100 SN63 RFP-200-100RK PDF

    RFP-40-100RPP

    Abstract: SN63
    Text: 40 Watts, 100 Ω Flangeless Resistors Model RFP-40-100RPP Flangeless Resistors General Specifications Resistive Element: Substrate: Cover: Lead s : Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications


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    RFP-40-100RPP MIL-E-5400. RFP-40-100RPP SN63 PDF

    Sn63

    Abstract: RFP-30-100R
    Text: 30 Watts, 100 Ω Flangeless Resistors Model RFP-30-100R Flangeless Resistors General Specifications Resistive Element: Substrate: Cover: Lead s : Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications


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    RFP-30-100R MIL-E-5400. Sn63 RFP-30-100R PDF

    Sn63

    Abstract: RFP-300-100RN 300100r
    Text: 300 Watts, 100 Ω Flangeless Resistors Model RFP-300-100RN Flangeless Resistors General Specifications Resistive Element: Substrate: Cover: Lead s : Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications


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    RFP-300-100RN MIL-E-5400. Sn63 RFP-300-100RN 300100r PDF

    RFP-125-100RF

    Abstract: Sn63
    Text: 125 Watts, 100 Ω Flangeless Resistors Model RFP-125-100RF Flangeless Resistors General Specifications Resistive Element: Substrate: Cover: Lead s : Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications


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    RFP-125-100RF MIL-E-5400. RFP-125-100RF Sn63 PDF

    RFP-150-100RCGN

    Abstract: Sn63
    Text: 150 Watts, 100 Ω Flangeless Resistors Model RFP-150-100RCGN Flangeless Resistors General Specifications Resistive Element: Substrate: Cover: Lead s : Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications


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    RFP-150-100RCGN MIL-E-5400. RFP-150-100RCGN Sn63 PDF

    RFP-100200-4X50-2

    Abstract: No abstract text available
    Text: 30 Watts, 50 Ω Chip Terminations Model RFP-100200-4X50-2 Chip Terminations General Specifications Resistive Element: Substrate: Terminals: Thick film Beryllium oxide ceramic Thick film silver Electrical Specifications Resistance Value: Frequency Range: Power:


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    RFP-100200-4X50-2 MIL-E-5400. RFP-100200-4X50-2 PDF

    RFP 75-50

    Abstract: 10030a RFP-100-1AF RFP-100-2AF RFP-100-3AF RFP-100-4AF RFP-100-5AF RFP-100-6AF RFP-100-9AF 1002AF
    Text: 100 Watts General Specifications Resistive Element: Substrate: Cover: Lead s : Flangeless Attenuators Model RFP-100-XXAF Flangeless Attenuators Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications Features


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    RFP-100-XXAF MIL-E-5400. RFP 75-50 10030a RFP-100-1AF RFP-100-2AF RFP-100-3AF RFP-100-4AF RFP-100-5AF RFP-100-6AF RFP-100-9AF 1002AF PDF

    MA4GC6773

    Abstract: No abstract text available
    Text: MA4GC6773 77 GHz GaAs SP2T PIN Diode Switch Features n n n n n n n n 77 Ghz Frequency Response 1.2 dB Insertion Loss 24 dB Isolation 2nS Switching Speed Silicon Nitride Passivation Polyimide Scratch Protection Designed for Automated Pick and Place Insertion


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    MA4GC6773 MA4CG6773 MA4GC6773 PDF

    B4 diode

    Abstract: diode b3 diode B4 MA4GC6774
    Text: MA4GC6774 77 GHz GaAs SP3T PIN Diode Switch Features n n n n n n n n 77 Ghz Frequency Response 1.4 dB Insertion Loss 24 dB Isolation 2nS Switching Speed Silicon Nitride Passivation Polyimide Scratch Protection Designed for Automated Pick and Place Insertion


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    MA4GC6774 MA4CG6774 B4 diode diode b3 diode B4 MA4GC6774 PDF

    A1L DIODE

    Abstract: diode l 0607 MA4GC6772 Diode B4 diode b3 B4 diode
    Text: MA4GC6772 77 GHz GaAs Multi-Throw PIN Diode Switch Features n n n n n n n n V 4.00 OD-S-1243 77 Ghz Frequency Response 4.0 dB Insertion Loss 24 dB Isolation 2nS Switching Speed Silicon Nitride Passivation Polyimide Scratch Protection Designed for Automated Pick and Place Insertion


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    MA4GC6772 OD-S-1243 MA4GC6772 A1L DIODE diode l 0607 Diode B4 diode b3 B4 diode PDF

    RFP-375375-6X50-2

    Abstract: No abstract text available
    Text: 300 Watts, 50 Ω Chip Terminations Model RFP-375375-6X50-2 Chip Terminations General Specifications Resistive Element: Substrate: Terminals: Thick film Beryllium oxide ceramic Thick film silver Electrical Specifications Resistance Value: Frequency Range:


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    RFP-375375-6X50-2 MIL-E-5400. RFP-375375-6X50-2 PDF

    RY 488

    Abstract: RFP-20A50T RFP-30A50TPP RFP-40A50TB RFP-40A50TD RFP-40A50TEN SN63
    Text: 50 Ω General Specifications Resistive Element: Substrate: Lead s : Resistance Value: Thick film Alumina ceramic 99.99% pure silver (.005” thk) 50 ohm, ±2% Features • DC - 6.0 GHz • 20-40 Watts Dimensions PART NUMBER RFP-20A50T A RY Notes: Tolerance is ±.010, unless otherwise specified. Operating


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    RFP-20A50T MIL-E-5400. RY 488 RFP-20A50T RFP-30A50TPP RFP-40A50TB RFP-40A50TD RFP-40A50TEN SN63 PDF

    RFP-250250-6X50-2

    Abstract: No abstract text available
    Text: 40 Watts, 50 Ω Chip Terminations Model RFP-250250-6X50-2 Chip Terminations General Specifications Resistive Element: Substrate: Terminals: Thick film Beryllium oxide ceramic Thick film silver Electrical Specifications Resistance Value: Frequency Range: Power:


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    RFP-250250-6X50-2 MIL-E-5400. RFP-250250-6X50-2 PDF

    RFP-050100-1X50-2

    Abstract: No abstract text available
    Text: 5 Watts, 50 Ω Chip Terminations Model RFP-050100-1X50-2 Chip Terminations General Specifications Resistive Element: Substrate: Terminals: Thick film Beryllium oxide ceramic Thick film silver Electrical Specifications Resistance Value: Frequency Range: Power:


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    RFP-050100-1X50-2 MIL-E-5400. RFP-050100-1X50-2 PDF

    RFP-150-50TCGN

    Abstract: SN63
    Text: 150 Watts, 50 Ω General Specifications Resistive Element: Substrate: Cover: Lead s : Flangeless Terminations Model RFP-150-50TCGN Flangeless Terminations Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications


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    RFP-150-50TCGN MIL-E-5400. RFP-150-50TCGN SN63 PDF

    RFP-30-50T

    Abstract: SN63
    Text: 30 Watts, 50 Ω General Specifications Resistive Element: Substrate: Cover: Lead s : Flangeless Terminations Model RFP-30-50T Flangeless Terminations Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications


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    RFP-30-50T MIL-E-5400. RFP-30-50T SN63 PDF

    RFP-050060-15X50-2

    Abstract: No abstract text available
    Text: 4 Watts, 50 Ω Chip Terminations Model RFP-050060-15X50-2 Chip Terminations General Specifications Resistive Element: Substrate: Terminals: Thick film Beryllium oxide ceramic Thick film silver Electrical Specifications Resistance Value: Frequency Range: Power:


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    RFP-050060-15X50-2 MIL-E-5400. RFP-050060-15X50-2 PDF

    SN63

    Abstract: RFP-300-50TD
    Text: 300 Watts, 50 Ω General Specifications Resistive Element: Substrate: Cover: Lead s : Flangeless Terminations Model RFP-300-50TD Flangeless Terminations Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications


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    RFP-300-50TD MIL-E-5400. SN63 RFP-300-50TD PDF

    MA4AGFCP910

    Abstract: MA4AGCP910 MADP-000910-13050T
    Text: AlGaAs Flip-Chip PIN Diode MA4AGFCP910 Rev 2.0 100MHz to 50GHz Features • • • • • • • Top View Shown Is With Diode Junction Up Lower Series Resistance, 5.2Ω Ultra Low Capacitance, 18 f F High Switching Cutoff Frequency, 50 GHz 3 Nanosecond Switching Speed


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    MA4AGFCP910 100MHz 50GHz MA4AGFCP910 Au/20 MA4AGCP910 MADP-000910-13050T MA4AGCP910 MADP-000910-13050T PDF

    RFP-050100-2X50-2

    Abstract: No abstract text available
    Text: 5 Watts, 50 Ω Chip Terminations Model RFP-050100-2X50-2 Chip Terminations General Specifications Resistive Element: Substrate: Terminals: Thick film Beryllium oxide ceramic Thick film silver Electrical Specifications Resistance Value: Frequency Range: Power:


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    RFP-050100-2X50-2 MIL-E-5400. RFP-050100-2X50-2 PDF

    RFP-40-2APPZ

    Abstract: RFP-40-1APPZ RFP-40-3APPZ RFP-40-4APPZ RFP-40-5APPZ RFP-40-6APPZ RFP-40-9APPZ SN63
    Text: 40 Watts General Specifications Resistive Element: Substrate: Cover: Lead s : Flangeless Attenuators Model RFP-40-XXAPPZ Flangeless Attenuators Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications Features


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    RFP-40-XXAPPZ MIL-E-5400. RFP-40-2APPZ RFP-40-1APPZ RFP-40-3APPZ RFP-40-4APPZ RFP-40-5APPZ RFP-40-6APPZ RFP-40-9APPZ SN63 PDF

    RFP-375250A4X50

    Abstract: RFP-375375A4X50 SN63 RFP-060120A25X50 RFP-100200A25X50 RFP-250250A4X50 RFP-250375A4X50
    Text: 50 Ω General Specifications Resistive Element: Substrate: Terminals: Resistance Value: Thick film Alumina ceramic Thick film silver 50 ohms, ±2% Alumina Chip Terminations Alumina Terminations Chip Terminations Features Dimensions • DC - 6.0 GHz PART NUMBER


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    RFP-060120A25X50 MIL-E-5400. RFP-100200A25X50 RFP-375250A4X50 RFP-375375A4X50 SN63 RFP-060120A25X50 RFP-100200A25X50 RFP-250250A4X50 RFP-250375A4X50 PDF

    Untitled

    Abstract: No abstract text available
    Text: 50 Ω General Specifications Resistive Element: Substrate: Terminals: Resistance Value: Thick film Alumina ceramic Thick film silver 50 ohm, ±2% Features Dimensions • DC - 4.0 GHz PART NUMBER • 8-18 Watts A RY Notes: Tolerance is ±.010, unless otherwise specified. Operating


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    MIL-E-5400. PDF