MP4007
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE POWER TRANSISTOR 4 IN 1 MP4007 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 25.2 ± 0.2 LOAD SWITCHING. . Small Package by Full Molding. (SIP 10 Pin) . High Collector Power Dissipation.
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MP4007
Ta-25
MP4007
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Untitled
Abstract: No abstract text available
Text: y — IN T E G R A T E D C IR C U IT S UC1610 UC3610 UNITRODE DUAL Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this
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UC1610
UC3610
UC3610
ambient40V
UC1611
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mp4002
Abstract: No abstract text available
Text: MP4002 SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 HIGH POWER S WITCHING APPLICATIONS. HAMMER DRIVE, INDUSTRIAL APPLICATIONS Unit in mm PULSE MOTOR DRIVE AND INDUCTIVE 25.2 ±0.2 LOAD SWITCHING. . Small Package by Full Molding. (SIP 10 Pin)
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MP4002
mp4002
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G50Q2YS50
Abstract: No abstract text available
Text: TOSHIBA MG50Q2YS50A TEN TATIVE TO S H IB A G TR M O D U LE SILICO N IM C H A N N EL IG B T MG50Q2YS50A HIGH PO W ER SW ITC H IN G A P P LIC A TIO N S . M O TO R C O N TR O L A P P LIC A TIO N S . High Input Impedance High Speed : tf= 0.3/iS Max. @Inductive Load
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MG50Q2YS50A
G50Q2YS50A
G50Q2YS50
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Untitled
Abstract: No abstract text available
Text: UC1610 UC2610 UC3610 UNITRODE Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
capC1610
UC3610
100mA
030S4
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Untitled
Abstract: No abstract text available
Text: TO SHIBA MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG75Q2YS50
Tempe30
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mp42
Abstract: No abstract text available
Text: MP4201 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE L2-7T-MOSm 4 IN 1 HIGH POWER HIGH SPEED SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 2 5.2 ± 0 .2 LOAD SWITCHING. • 4-Volt Gate D rive Available
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MP4201
100/JA
mp42
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BY575
Abstract: No abstract text available
Text: TOSHIBA MG100Q2YS50 MG100Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS U nit in mm M O T O R CONTRO L APPLICATIONS H igh Input Impedance High Speed : tf=0.3/*s Max. @ Inductive Load Low Saturation Voltage
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MG100Q2YS50
BY575
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MP3008
Abstract: No abstract text available
Text: MP3008 SILICON NPN EPITAXIAL TYPE_ DARLINGTON POWER TRANSISTOR 3 IN 1 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. FEATURES • Small Package by Full Molding.
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MP3008
MP3008
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE MG25Q6ES50A TOSHIBA GTR MODULE MG25Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage
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MG25Q6ES50A
MG25Q
ES50A
961001EAA1
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TS1937
Abstract: TS19376
Text: TS19376 1A Step-down High Brightness LED Driver SOT-89-5L Pin Definition: 1. SW 2. GND 3. DIM 4. CSN 5. VIN General Description The TS19376 is a continuous conduction mode inductive step-down converter, designed for driving single or multiple series connected LED efficiently from a voltage source higher than the total LED chain voltage. The
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TS19376
OT-89-5L
TS19376
TS1937
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Untitled
Abstract: No abstract text available
Text: MP4501 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type Four Darlington Power Transistors in One MP4501 Industrial Applications High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Package with heat sink isolated to lead (SIP 12 pins)
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MP4501
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Untitled
Abstract: No abstract text available
Text: HA / HD48 Series • Ratings from 12A to 125A @ 48-530 VAC • SCR output for heavy industrial loads • AC or DC control • Zero-crossing resistive loads or random-fire (inductive loads) output PRODUCT SELECTION Control Voltage 3-32 VDC 90-280 Vrms 18-36 Vrms
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HD4812
HA4812
HA4812E
HD4825
HA4825
HA4825E
HD4850
HA4850
HA4850E
HD4875
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AD1010
Abstract: No abstract text available
Text: PA16PA16 • PA16A • PA16A PA16, PA16A Power Operational Amplifiers FEATURES DESCRIPTION The PA16 and PA16A are wideband, high output current operational amplifiers designed to drive resistive, inductive and capacitive loads. Their complementary “collector output” stage can swing close to the supply
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PA16A
PA16A
PA16U
PA16U
AD1010
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Untitled
Abstract: No abstract text available
Text: TD62008APG/AFG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62008APG,TD62008AFG 7CH DARLINGTON SINK DRIVER The TD62008APG and TD62008AFG are high−voltage, high−current darlington drivers comprised of seven NPN darlington pairs. All units feature integral clamp diodes for switching inductive
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TD62008APG/AFG
TD62008APG
TD62008AFG
TD62008AFG
TD62008APG
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PJ 969 diode
Abstract: MP4012 PJ 969
Text: MP4012 SILICON NPN EPITAXIAL TYPE_ DARLINGTON POWER TRANSISTOR 4 IN 1 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS _Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 25.2±0-2 LOAD SWITCHING. . Small Package by Full Molding.
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MP4012
PJ 969 diode
MP4012
PJ 969
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mp3007
Abstract: No abstract text available
Text: MP3007 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 3 IN 1 INDUSTRIA) o HIGH POWER SWITCHING APPLICATIONS, APPLICATIONS Unit in mm o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. FEATURES • Small Package by Full Molding. (SIF 8 Pin)
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MP3007
mp3007
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2N5732
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2N5732 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3 package ·High current capability APPLICATIONS ·For linear amplifier and inductive switching applications PINNING see fig.2 PIN DESCRIPTION 1 Base
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2N5732
2N5732
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MJE1320
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification MJE1320 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220 package ・High voltage ・Low collector saturation voltage APPLICATIONS ・For high-voltage ,power switching in inductive circuits and line operated
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MJE1320
O-220
MJE1320
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UN2003LV
Abstract: UN2003 uln2003 stepper motor ULN-20003 UN2003L driver motor stepper ULN2003 ULN2003 PIN DIAGRAM configuration uln2003 relay ic circuit diagram ULN2000 ULN2003 DRIVER free
Text: ULN2003LV www.ti.com SLRS059A – APRIL 2012 – REVISED APRIL 2012 7-Channel Relay and Inductive Load Sink Driver Check for Samples: ULN2003LV FEATURES 1 • • • • • • • • • • • • 1 7-Channel High Current Sink Drivers Supports up to 8V Ouput Pull-up Voltage
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ULN2003LV
SLRS059A
100mA
140mA
UN2003LV
UN2003
uln2003 stepper motor
ULN-20003
UN2003L
driver motor stepper ULN2003
ULN2003 PIN DIAGRAM configuration
uln2003 relay ic circuit diagram
ULN2000
ULN2003 DRIVER free
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2n222 TRANSISTOR
Abstract: transistor 2n222 of diode 2n222 1N493 mje5742g mje20 2n2905 time delay relay high voltage fast switching transistor for ignition coil drivers application Ferroxcube core 2N2905 transistor
Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*
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MJE5740G,
MJE5742G
MJE5740G
MJE5740
MJE5742
MJE574xG
O-220AB
2n222 TRANSISTOR
transistor 2n222
of diode 2n222
1N493
mje20
2n2905 time delay relay
high voltage fast switching transistor for ignition coil drivers application
Ferroxcube core
2N2905 transistor
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mje13009g
Abstract: MJE130 2N2222 transistor to drive a relay MJE13009 MJE13009D
Text: MJE13009G SWITCHMODE Series NPN Silicon Power Transistors The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,
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MJE13009G
MJE13009/D
MJE130
2N2222 transistor to drive a relay
MJE13009
MJE13009D
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Resistor 600 ohm 25W
Abstract: No abstract text available
Text: BVM Series Stackpole Electronics, Inc. Ceramic Housed Vertical Bracket Mount Resistor Features: • • • • • • Resistive Product Solutions Flameproof inorganic construction High temperature potting compound Non-inductive available up to 50Ω RoHS compliant / lead-free
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35N04G
Abstract: schematic diagram electrical motor control
Text: NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features • Exceptional Safe Operating Area
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NJD35N04G,
NJVNJD35N04G,
NJVNJD35N04T4G
AEC-Q101
NJD35N04/D
35N04G
schematic diagram electrical motor control
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