FS200R12KT4
Abstract: ff600r12me FF600R12ME4 ff600r12me4b11 FS50R12KT4 DIN EN 60352 FS225R12OE4 iec 60352 FS450R12OE4 60352
Text: Product Information Main Features PressFIT Infineon’s established, reliable mounting technology • ■ ■ ■ INFINEON’S ESTABLISHED PressFIT technology offers the possibility for reliable, solder-less mounting of power modules, meeting the nowadays demands
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dram structure
Abstract: 2240 6T SRAM micron sram
Text: Joint News Release by Infineon and Micron Infineon Technologies and Micron Technology Announce Cooperation to Develop ‘CellularRAM’ Munich, Germany/Boise, Idaho, USA, June 24, 2002 - Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced they
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BTS 6000 ericsson
Abstract: ericsson bts 6000 ERICSSON BTS product nokia bts SOCRATES Socrates SHDSL System on Chip 10BaseS shdsl chipset by98 ericsson bts
Text: Investor Roadshow Presentation November 2000 Page 1 Roadshow Presentation November 2000 Investor Relations Infineon Technologies AG Never stop thinking. Record Fiscal Year 2000 n Record results exceeding expectations of capital markets: - Revenues up 72 percent from last year to Euro 7.28 billion
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BTS 6000 ericsson
ericsson bts 6000
ERICSSON BTS product
nokia bts
SOCRATES
Socrates SHDSL System on Chip
10BaseS
shdsl chipset
by98
ericsson bts
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Infineon technology roadmap
Abstract: DDR2 INFINEON INFINEON TECHnology Infineon automotive semiconductor technology roadmap ddr2 datasheet DDR2-533
Text: Infineon Announces Shipment of World’s Smallest 512 Megabit DDR2 Memory Components to Intel; Infineon’s DDR2 Memory Technology Successfully Boots with Intel Corporation’s Next Generation ‘Lindenhurst’ Dual Processor Server Chipset Munich/Germany and San Jose/USA, September 17, 2003 – Infineon Technologies
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INFMP200309
Infineon technology roadmap
DDR2
INFINEON
INFINEON TECHnology
Infineon automotive semiconductor technology roadmap
ddr2 datasheet
DDR2-533
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gaas wafer
Abstract: k-band infineon phased array radar
Text: GaAs Components Introduction 1 Introduction Since 1975 Infineon Technologies former Siemens Semiconductors has been engaged in research and development of III-V semiconductor components and circuits. The world’s first commercially available GaAs MMIC was created by Infineon Technologies
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infineon radar
Abstract: infineon phased array radar
Text: GaAs Components Infineon tsjcKnti'og '«s Introduction 1 Introduction Since 1975 Infineon Technologies former Siemens Semiconductors has been engaged in research and development ot lll-V semiconductor components and circuits. The world’s first commercially available GaAs MMIC was created by Infineon Technologies
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D0865C5
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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D0565C5
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH05G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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D1665C5
Abstract: Infineon power diffusion process idh16g65c5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH16G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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D0265C5
Abstract: IDH02G65C5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH02G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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D2065C5
Abstract: Infineon power diffusion process IDH20G65C5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH20G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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D1265C5
Abstract: d1265 IDH12G65C5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH12G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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D1065C5
Abstract: IDH10G65C5 91E-9
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH10G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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D0665C5
Abstract: VR300
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH06G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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Abstract: IDH09G65C5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH09G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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IDH04G65C5
Abstract: D0465C5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH04G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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smd transistor M30
Abstract: siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 low noise hemt x-band microwave fet infineon rf smd package w-band
Text: 7KH *D$V RXQGU\ +LVWRU\ Since 1975 Infineon Technologies former Siemens Semiconductors) has been engaged in research and development of III-V semiconductor components and circuits. The world‘s first commercially available GaAs MMIC was created by Infineon Technologies in 1981.
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smd transistor M30
siemens gaas fet
m30 smd TRANSISTOR
Behet
SIEMENS MICROWAVE RADIO
HBT3
low noise hemt
x-band microwave fet
infineon rf smd package
w-band
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OSRAM TRANSCEIVER
Abstract: Matsua LED Report 1998
Text: 0613-00-JWT GB engl. S.050-063 02.11.2000 17:58 Uhr Seite 50 O F B U S I N E S S R E S U LT S The audited group financial data for the 1999 financial year “1999” and 1998 financial year (“1998”) is based upon a series of assumptions which are discussed in greater detail in the section, “Selected Financial
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH03G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH05G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH05G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH12G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH20G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH20G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Ge ner ation thin Q! T M 650V SiC Schottky Diode IDL04G65C5 Final Da ta Sh eet Rev. 2.0, 2013-12-05 Po wer Ma nage m ent & M ulti m ark et 5th Generation thinQ! SiC Schottky Diode 1 IDL04G65C5 ThinPAK 8x8 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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D0865C5
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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