FZ1200R33KF2C
Abstract: igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HE3 FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation
Text: High Power IGBT modules with improved mechanical performance and advanced 3.3kV IGBT3 chip technology Th. Schütze1 , J. Biermann1), R. Spanke 1), M. Pfaffenlehner2) 1 2 Infineon Technologies AG, Max-Planck-Straße, D-59581 Warstein, Germany Infineon Technologies AG, Am Campeon 1 - 12, D-85579 Neubiberg, Germany
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D-59581
D-85579
06K/kW
FZ1500R33HE3
FZ1500R33HL3
FZ1200R33KF2C
FZ1500R33HE3
FZ1200R33KF2C
igbt 3.3kv
planar busbar design
HIGH VOLTAGE DIODE 3.3kv
FZ1500R33HL3
the calculation of the power dissipation for the IGBT
i300a
IGBT FZ1200
BUSBAR calculation
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infineon power cycling igbt3
Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
Text: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,
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D-59581
200V-Trench-
1998-Kyoto
2003N
00V-IGBT³
2004-N
infineon power cycling igbt3
IGBT4
snap-off diode
infineon igbt3 1200v
infineon power cycling curves
infineon igbt4 1200v
Measurement of stray inductance for IGBT
igbt simulation
IGBT2
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AN2008-01
Abstract: IGBT2 IGBT1 infineon
Text: Application Note, V1.0, 2008 AN2008-01 Technical Information IGBT Modules Definition and use of junction temperature values Industrial Power We Listen to Your Comments Any information within this document that you feel is wrong, Your feedback will help us to continuously improve the
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AN2008-01
1600/1700V
AN2008-01
IGBT2
IGBT1 infineon
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3rd Generation of 1200V IGBT Modules
Abstract: transorb 200v transorb diode igbt failure infineon technologies formerly siemens siemens igbt infineon igbt3 1200v IGBT infineon IGBT structure infineon igbt3 ohm
Text: 3rd Generation of 1200V IGBT Modules M. Hierholzer, Th. Laska, M. Münzer, F. Pfirsch, C. Schäffer, Th. Schmidt IGBT-modules are the most frequently used semiconductors for power applications. The markets demand for higher power integration in one module is limited by the chip losses and the housings
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SGP07N120
Abstract: SIGC16T120CS infineon igbt3 1200v
Text: Preliminary SIGC16T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CS 1200V This chip is used for: • SGP07N120
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SIGC16T120CS
SGP07N120
Q67050-A4113
7131-S,
SGP07N120
SIGC16T120CS
infineon igbt3 1200v
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hybrid vehicle power inverter
Abstract: infineon igbt reliability FS400R07A1E3 INVERTER 20kW infineon power cycling igbt3 FS400R07 infineon power cycling 3 phase IGBT inverter design Fs300R07A1E3 FS200R07
Text: Product Brief HybridPACK TM1 Power Module for Hybrid Electric Vehicles INFINEON ’s HybridPACK TM1 is a fully automotive qualified power module designed for Hybrid Electric Vehicle HEV applications for a power range up to 20KW–30KW. Designed for a 150°C
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00A/650V.
B136-H9464-X-X-7600
NB10-1415
hybrid vehicle power inverter
infineon igbt reliability
FS400R07A1E3
INVERTER 20kW
infineon power cycling igbt3
FS400R07
infineon power cycling
3 phase IGBT inverter design
Fs300R07A1E3
FS200R07
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Untitled
Abstract: No abstract text available
Text: Power Modules Economical IGBT based NPC inverter modules with baseplate Vincotech is proud to announce the expansion of its Neutral Point Clamped flow 2 housing 17 x 108 x 47mm NPC inverter flow 2 module family. The new NPC modules developed with IGBT cover a current range from 200A to 300A in a flow 2 housing with
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M105F/-FV
Jan-13
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l 7251 3.1
Abstract: l 7251 7251 SGP02N120 SIGC06T120CS
Text: SIGC06T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC06T120CS 1200V This chip is used for: • SGP02N120 Applications:
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SIGC06T120CS
SGP02N120
Q67050-A4115A001
7251-S,
l 7251 3.1
l 7251
7251
SGP02N120
SIGC06T120CS
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Untitled
Abstract: No abstract text available
Text: SIGC12T120E IGBT3 Power Chip Features: • 1200V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power modules C Applications: drives G Chip Type
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SIGC12T120E
L7621M,
L7621T,
L7621E,
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Untitled
Abstract: No abstract text available
Text: SIGC16T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CS 1200V This chip is used for: • SGP07N120 Applications:
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SIGC16T120CS
SGP07N120
Q67050-A4113
7131-S,
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l 7251 3.1
Abstract: l 7251 A001 SGP02N120 SIGC06T120CS
Text: Preliminary SIGC06T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC06T120CS 1200V This chip is used for: • SGP02N120
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SIGC06T120CS
SGP02N120
Q67050-A4115sawn
7251-S,
l 7251 3.1
l 7251
A001
SGP02N120
SIGC06T120CS
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FS300R12OE4P
Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in
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Untitled
Abstract: No abstract text available
Text: SIGC32T120R3E IGBT3 Power Chip Features: • 1200V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power modules C Applications: drives G
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SIGC32T120R3E
L7641M,
L7641T,
L7641E,
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Untitled
Abstract: No abstract text available
Text: SIGC109T120R3E IGBT3 Power Chip Features: • 1200V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling Chip Type SIGC109T120R3E VCE IC 1200V 100A This chip is used for: power modules
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SIGC109T120R3E
L7688M,
L7688T,
L7688E,
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Untitled
Abstract: No abstract text available
Text: SIGC41T120R3LE IGBT3 Power Chip Features: • 1200V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power modules C Applications: drives
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SIGC41T120R3LE
L7651N,
L7651U,
L7651F,
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10-FZ06NIA075SA-P926F33
Abstract: No abstract text available
Text: Power Modules New IGBT based NPC inverter modules Vincotech is proud to announce the expansion of its Neutral Point Clamped flow 0 housing 12 x 66 x 32mm inverter NPC flow 0 module family. The new NPC modules developed with IGBTs cover a current range from 30A to 75A in a flow 0 housing.
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10-FZ06NIA075SA-P926F33
Jan-11
10-FZ06NIA075SA-P926F33
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Untitled
Abstract: No abstract text available
Text: SIGC158T120R3LE IGBT3 Chip Features: • 1200V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type VCE IC SIGC158T120R3LE 1200V 150A This chip is used for: • power modules
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SIGC158T120R3LE
SIGC158T120R3LE
L7696U,
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Untitled
Abstract: No abstract text available
Text: SIGC32T120R3LE IGBT3 Power Chip Features: • 1200V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power modules C Applications: drives
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SIGC32T120R3LE
L7641N,
L7641U,
L7641F,
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Untitled
Abstract: No abstract text available
Text: SIGC20T120E IGBT3 Power Chip Features: • 1200V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power modules C Applications: drives G Chip Type
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SIGC20T120E
L7631M,
L7631T,
L7631E,
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soft solder die bonding
Abstract: igbt "sawn on foil" SMPS IC 2003 SGP07N120 SIGC16T120CS infineon igbt3 1200v
Text: SIGC16T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CS 1200V This chip is used for: • SGP07N120 Applications:
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SIGC16T120CS
SGP07N120
Q67050-A4113
7131-S,
soft solder die bonding
igbt "sawn on foil"
SMPS IC 2003
SGP07N120
SIGC16T120CS
infineon igbt3 1200v
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igbt infineon
Abstract: Easy-750 The field stop IGBT FS IGBT infineon igbt reliability IGBT inverter design by microcontroller A-9500 infineon igbt die 1200V igbt3 igbt2 infineon infineon igbt3 rg easypim igbt
Text: 600 V IGBT³-Technology in New Low Cost Modules for Consumer Drives Applications P. Kanschat1, T. Stolze1, T. Passe1, H. Rüthing2, F. Umbach2, O. Hellmund3 1 eupec GmbH, Max-Planck-Str. 5, D-59581 Warstein, Germany Infineon Technologies AG, St. Martin-Str. 76, D-81541 München, Germany
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D-59581
D-81541
Easy750
6ED004E06"
igbt infineon
Easy-750
The field stop IGBT FS IGBT
infineon igbt reliability
IGBT inverter design by microcontroller
A-9500
infineon igbt die 1200V
igbt3 igbt2 infineon
infineon igbt3 rg
easypim igbt
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l 7251 3.1
Abstract: No abstract text available
Text: SIGC06T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC06T120CS 1200V This chip is used for: • SGP02N120 Applications:
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SIGC06T120CS
SGP02N120
Q67050-A4115A001
7251-S,
l 7251 3.1
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Untitled
Abstract: No abstract text available
Text: SIGC109T120R3E IGBT3 Chip Features: • 1200V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC109T120R3E VCE IC 1200V 100A This chip is used for: • power modules
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SIGC109T120R3E
L7686T,
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Untitled
Abstract: No abstract text available
Text: SIGC20T120LE IGBT3 Power Chip Features: • 1200V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power modules C Applications: drives G
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SIGC20T120LE
L7631N,
L7631U,
L7631F,
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