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    INFINEON MARKING W1S Search Results

    INFINEON MARKING W1S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    INFINEON MARKING W1S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA06UPN NPN/PNP Silicon AF Transistor Array 5  High breakdown voltage 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 Transistors in one package 2 Tape loading orientation 1 Marking on SC74 package (for example W1s)


    Original     		SMBTA06UPN VPW09197 EHA07177 PDF

    infineon marking W1s SOT23

    Abstract: BFT92 w1s sot23 marking W1S sot23 30227 BCW66 E6327
    Text: BFT92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration


    Original     		BFT92 VPS05161 15rements infineon marking W1s SOT23 BFT92 w1s sot23 marking W1S sot23 30227 BCW66 E6327 PDF

    infineon marking W1s SOT23

    Abstract: marking W1S sot23 infineon marking W1s transitor RF 98 BFT92 bft92 datasheet w1s sot23 30227 BFR92p application note marking code 10 sot23
    Text: BFT92 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents up to 30 mA 2 3 • Complementary type: BFR92P NPN 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFT92 Marking W1s Pin Configuration


    Original     		BFT92 BFR92P infineon marking W1s SOT23 marking W1S sot23 infineon marking W1s transitor RF 98 BFT92 bft92 datasheet w1s sot23 30227 BFR92p application note marking code 10 sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA06UPN NPN/PNP Silicon AF Transistor Array 5  High breakdown voltage 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 Transistors in one package 2 Tape loading orientation 1 Marking on SC74 package (for example W1s)


    Original     		SMBTA06UPN VPW09197 EHA07177 PDF

    infineon marking W1s SOT23

    Abstract: marking W1S sot23
    Text: BFT92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration


    Original     		BFT92 VPS05161 infineon marking W1s SOT23 marking W1S sot23 PDF

    BFT92

    Abstract: 30227 infineon marking W1s marking W1S sot23 transistor Bft92 infineon marking W1s SOT23 W1S SOT23
    Text: BFT92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration


    Original     		BFT92 VPS05161 900MHz Jul-16-2001 BFT92 30227 infineon marking W1s marking W1S sot23 transistor Bft92 infineon marking W1s SOT23 W1S SOT23 PDF

    marking CODE 1BS

    Abstract: 1BS transistor BC817UPN BCW66H SC74 marking code w1s transistor 1Bs TRANSISTOR marking CB code
    Text: BC817UPN NPN Silicon AF Transistor Array • For AF stages and driver applications 4 • High current gain 3 5 2 6 • Low collector-emitter saturation voltage 1 • Two galvanic internal isolated NPN/PNP transistors in one package • Pb-free (RoHS compliant) package 1)


    Original     		BC817UPN EHA07177 marking CODE 1BS 1BS transistor BC817UPN BCW66H SC74 marking code w1s transistor 1Bs TRANSISTOR marking CB code PDF

    infineon marking W1s

    Abstract: marking code w1s marking W1S Marking w1s sot
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)


    Original     		BCR10PN EHA07176 OT-363 EHA07193 OT363 infineon marking W1s marking code w1s marking W1S Marking w1s sot PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage 4 • Low collector-emitter saturation voltage 3 5 2 6 • Two galvanic internal isolated NPN/PNP 1 Transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101


    Original     		SMBTA06UPN EHA07177 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR22PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=22 kΩ, R2 =22 kΩ)


    Original     		BCR22PN EHA07176 OT-363 EHA07193 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =47 kΩ)


    Original     		BCR35PN EHA07176 OT-363 EHA07193 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR08PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=2.2 kΩ, R2=47 kΩ)


    Original     		BCR08PN EHA07176 EHA07193 OT-363 OT363 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)


    Original     		BCR10PN EHA07176 OT-363 EHA07193 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR08PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=2.2 kΩ, R2=47 kΩ)


    Original     		BCR08PN EHA07176 OT-363 EHA07193 PDF

    infineon marking W1s

    Abstract: BCR08PN BCR108S marking code w1s
    Text: BCR08PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=2.2 kΩ, R2=47 kΩ)


    Original     		BCR08PN EHA07176 OT-363 EHA07193 infineon marking W1s BCR08PN BCR108S marking code w1s PDF

    marking 215

    Abstract: MARKING CODE wus SOT363 pin configuration of ic IC Marking AC 6 PIN
    Text: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =47 kΩ)


    Original     		BCR35PN EHA07176 EHA07193 OT-363 OT363 marking 215 MARKING CODE wus SOT363 pin configuration of ic IC Marking AC 6 PIN PDF

    MARKING CODE CCB

    Abstract: infineon marking W1s marking code w1s SC74 SMBTA06UPN
    Text: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage 4 • Low collector-emitter saturation voltage 3 5 2 6 • Two galvanic internal isolated NPN/PNP 1 Transistor in one package • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101


    Original     		SMBTA06UPN EHA07177 MARKING CODE CCB infineon marking W1s marking code w1s SC74 SMBTA06UPN PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage • Low collector-emitter saturation voltage 4 3 5 • Two galvanic internal isolated NPN/PNP 2 6 1 Transistor in one package Tape loading orientation Top View 6 5 4 Marking on SC74 package


    Original     		SMBTA06UPN EHA07177 PDF

    marking WPs

    Abstract: No abstract text available
    Text: BCR22PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=22 kΩ, R2 =22 kΩ)


    Original     		BCR22PN EHA07176 OT-363 EHA07193 OT363 marking WPs PDF

    MARKING CODE wus SOT363

    Abstract: BCR-35PN MARKING CODE W1s MARKING WUs Infineon BCR35PN
    Text: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1 =10 kΩ, R2 =47 kΩ)


    Original     		BCR35PN EHA07176 OT-363 EHA07193 OT363 MARKING CODE wus SOT363 BCR-35PN MARKING CODE W1s MARKING WUs Infineon BCR35PN PDF

    bcr08pn

    Abstract: WFs transistor wfs marking
    Text: BCR08PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=2.2 kΩ, R2=47 kΩ)


    Original     		BCR08PN EHA07176 OT-363 EHA07193 OT363 bcr08pn WFs transistor wfs marking PDF

    transistor 1Bs

    Abstract: 1BS MARKING CODE B 817 c marking CODE 1BS infineon marking W1s marking code w1s
    Text: BC817UPN NPN Silicon AF Transistor Array • For AF stages and driver applications 4 • High current gain 3 5 2 6 • Low collector-emitter saturation voltage 1 • Two galvanic internal isolated NPN/PNP transistors in one package • Pb-free (RoHS compliant) package


    Original     		BC817UPN EHA07177 transistor 1Bs 1BS MARKING CODE B 817 c marking CODE 1BS infineon marking W1s marking code w1s PDF

    transistor marking code wts

    Abstract: Marking W1s
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		BCR48PN EHA07193 EHA07176 OT-363 OT363 transistor marking code wts Marking W1s PDF

    marking WPs

    Abstract: No abstract text available
    Text: BCR22PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=22 kΩ, R2 =22 kΩ)


    Original     		BCR22PN EHA07176 EHA07193 OT-363 OT363 marking WPs PDF