GRM422Y5V106Z050AL
Abstract: PTMA210452EL PTMA210452FL RO4350
Text: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description The PTMA210452EL and PTMA210452FL are matched, wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use in
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PTMA210452EL
PTMA210452FL
PTMA210452EL
PTMA210452FL
45-watt,
H-33265-8
H-34265-8
GRM422Y5V106Z050AL
RO4350
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GS 9425
Abstract: PTFA092211EL PTFA092211FL package tray design dwg
Text: Preliminary PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications
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PTFA092211EL
PTFA092211FL
PTFA092211EL
PTFA092211FL
220-watt,
PTFA092211FL*
H-34288-2
GS 9425
package tray design dwg
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Untitled
Abstract: No abstract text available
Text: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description 25 IM3 -45 20 tin ACPR -50 15 -55 -60 30 32 34 36 38 40 42 t uc • Broadband internal matching • Typical two-carrier WCDMA performance at
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PTFA210701E
PTFA210701F
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a2324
Abstract: H-37260-2 elna 50v LM7805 05 BCP56 LM7805 PTFA092201E PTFA092201F RO4350
Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced
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PTFA092201E
PTFA092201F
PTFA092201E
PTFA092201F
220-watt,
H-36260-2
H-37260-2
a2324
H-37260-2
elna 50v
LM7805 05
BCP56
LM7805
RO4350
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a210701e
Abstract: PTFA210701E 1K capacitor lm 2094 BCP56 LM7805 PTFA210701F RO4350
Text: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier
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PTFA210701E
PTFA210701F
PTFA210701E
PTFA210701F
70-watt
H-36265-2
H-37265-2
a210701e
1K capacitor
lm 2094
BCP56
LM7805
RO4350
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200B
Abstract: BCP56 LM7805 PTFA260851E PTFA260851F
Text: PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz Description The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to
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PTFA260851E
PTFA260851F
PTFA260851E
PTFA260851F
85-watt
200B
BCP56
LM7805
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transistor di 960
Abstract: No abstract text available
Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications
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PTFA092211EL
PTFA092211FL
PTFA092211EL
PTFA092211FL
220-watt,
H-34288-2
transistor di 960
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PTFB092707FH
Abstract: No abstract text available
Text: PTFB092707FH advance specification Description advance specification Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 925 – 960 MHz Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance
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PTFB092707FH
PTFB092707FH
220-watt
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marking us capacitor pf l1
Abstract: BCP56 LM7805 PTFA210301E infineon gold
Text: PTFA210301E Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110 – 2170 MHz Description The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is optimized for single- and two-carrier WCDMA operation from 2110
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PTFA210301E
PTFA210301E
30-watt,
marking us capacitor pf l1
BCP56
LM7805
infineon gold
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GRM422Y5V106Z050AL
Abstract: PTMA180402EL PTMA180402FL RO4350 H-33265-8
Text: PTMA180402EL PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifer 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in
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PTMA180402EL
PTMA180402FL
PTMA180402EL
PTMA180402FL
40-watt,
H-33265-8
H-34265-8
50-ohm
GRM422Y5V106Z050AL
RO4350
H-33265-8
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PTFA082201E
Abstract: RO4350 elna 50v elna capacitor BCP56 LM7805 PTFA082201F ceramic capacitor 39 pf A34 rf 35V ELNA Electrolytic capacitor
Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in
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PTFA082201E
PTFA082201F
PTFA082201E
PTFA082201F
220-watt
RO4350
elna 50v
elna capacitor
BCP56
LM7805
ceramic capacitor 39 pf
A34 rf
35V ELNA Electrolytic capacitor
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Untitled
Abstract: No abstract text available
Text: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description ue 25 IM3 -38 tin 20 -43 15 -48 10 ACPR -53 34 36 38 40 42 44 t od Broadband internal matching d 30 Drain Efficiency % Efficiency Thermally-enhanced packages
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PTFA181001E
PTFA181001F
H-37248-2
H-36248-2
PTFA181001E
PTFA181001F
100-watt
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CW 7805
Abstract: PTFA092213EL H-34288-6 PTFA092213EL ESD BCP56 LM7805 R250 RO4350 H-33288-6 240-2520-2-ND
Text: PTFA092213EL PTFA092213FL Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band. These devices feature
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PTFA092213EL
PTFA092213FL
PTFA092213EL
PTFA092213FL
220-watt,
H-33288-6
H-34288-6
CW 7805
H-34288-6
PTFA092213EL ESD
BCP56
LM7805
R250
RO4350
H-33288-6
240-2520-2-ND
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PTFB213004
Abstract: PTFB213004F h-37275-8
Text: Preliminary PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz
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PTFB213004F
PTFB213004F
300-watt
PTFB213004F*
H-37275-8
PTFB213004
h-37275-8
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BDS31314
Abstract: PTF210451E PTF210451F
Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest
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PTF210451E
PTF210451F
PTF210451E
PTF210451F
45-watt
PTF210451F*
BDS31314
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BFP650
Abstract: BGA420 T-25
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology
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BFP650
OT343
BFP650
BGA420
T-25
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Untitled
Abstract: No abstract text available
Text: 120 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold
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1/16W
1-877-GOLDMOS
1522-PTF
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BFP640E6327
Abstract: BFP640 noise figure bfp640e R4S BFP640
Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640
OT343
726-BFP640E6327
E6327
BFP640E6327
BFP640 noise figure
bfp640e
R4S BFP640
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INFINEON BFP420 Ams
Abstract: BFP420
Text: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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BFP420
OT343
726-BFP420E6740
E6740
INFINEON BFP420 Ams
BFP420
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BFP520
Abstract: BGA420
Text: BFP520 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 Outstanding Gms = 23.5 dB 1 Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability
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BFP520
OT343
BFP520
BGA420
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BFR740L3
Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ MARKING CODE R7 RF TRANSISTOR germanium transistors NPN
Text: BFR740L3 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 1 a wide range of wireless applications 2 up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz
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BFR740L3
BFR740L3
RF NPN POWER TRANSISTOR C 10-12 GHZ
MARKING CODE R7 RF TRANSISTOR
germanium transistors NPN
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BFP405F
Abstract: BFP420F
Text: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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BFP405F
BFP405F
BFP420F
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BFP740 SPICE MODEL
Abstract: BFP740 equivalent BFP740 BGA420 germanium transistor ac 128
Text: BFP740 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 2 4 a wide range of wireless applications 1 up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz
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BFP740
OT343
BFP740 SPICE MODEL
BFP740 equivalent
BFP740
BGA420
germanium transistor ac 128
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Untitled
Abstract: No abstract text available
Text: BFP620 Infineon technologies NPN Silicon-Germanium RF Transistor Preliminary Data • • For high gain low noise amplifier Noise Figure F = 0.65 dB at 1.8 GHz • G ms=21 dB at 1.8 GHz Gold metalization for high reliability 70G Hz fT - Line 10dBm Input IP3 capability @ 1.95 GHz, VCE=2V, lCE=6mA
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BFP620
10dBm
T-343
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