Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    INFRARED LIGHT EMITTING DIODE Search Results

    INFRARED LIGHT EMITTING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPS92642QPWPRQ1 Texas Instruments Automotive synchronous buck infrared LED driver 16-HTSSOP -40 to 125 Visit Texas Instruments
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    INFRARED LIGHT EMITTING DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AP 1100 R1

    Abstract: LN58
    Text: Panasonic Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency : P0 = 3.5 mW typ. « Light emitting spectrum suited for silicon photodetectors a Infrared light emission close to monochromatic light :


    OCR Scan     		PDF

    infrared detectors

    Abstract: Infrared Emitting Diode LNA2601L
    Text: Panasonic Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency Light emitting spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : XP = 950 nm


    OCR Scan     		LNA2601L infrared detectors Infrared Emitting Diode LNA2601L PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN54 G aAs Infrared Light Emitting Diode Unit : mm For optical control systems • Features • High-power output, high-efficiency : PQ = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to monochromatic light :


    OCR Scan     		PDF

    V30K20

    Abstract: L440 diode GaAs 1000 nm Infrared Emitting Diode Infrared Emitting Diode LN54 LA440
    Text: Panasonic Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to m onochromatic light :


    OCR Scan     		PDF

    LN189S

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical


    Original     		LN189S LN189S PDF

    LN189S

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical


    Original     		LN189S LN189S PDF

    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN189M GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical


    Original     		LN189M 100mA PDF

    LN189L

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical


    Original     		LN189L LN189L PDF

    LN189L

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical


    Original     		LN189L LN189L PDF

    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm


    Original     		PDF

    LN162S

    Abstract: GaAs 1000 nm Infrared Emitting Diode
    Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :


    Original     		LN162S LN162S GaAs 1000 nm Infrared Emitting Diode PDF

    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 3.75±0.3 • Features 12.5 min. • High-power output, high-efficiency: PO = 3.5 mW typ. • Infrared light emission close to monochromatic light:


    Original     		LN162S CTRLR102-001 PDF

    LN162S

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :


    Original     		LN162S LN162S PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • High-power output, high-efficiency : Ie = 13.0 mW/sr min. • Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		LN66F PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LNA2601L G aAs Infrared Light Em itting Diode For optical control systems • Features • • • • High-power output, high-efficiency Light emitting spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : XP = 950 nm


    OCR Scan     		LNA2601L 25f-power 010Jg. PDF

    LN52

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm Features High-power output, high-efficiency : PO = 6 mW typ. Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm


    Original     		PDF

    GaAs 850 nm Infrared Emitting Diode

    Abstract: Infrared Emitting Diode LN52
    Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm Features High-power output, high-efficiency : PO = 6 mW typ. Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm


    Original     		100mA GaAs 850 nm Infrared Emitting Diode Infrared Emitting Diode LN52 PDF

    a950

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • • • • High-power output, high-efficiency : Ie = 13.0 mW /sr min. Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		LN66F 0102Q. a950 PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :P0 = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		100mA PDF

    LN162S

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P 0 = 3.5 mW typ. • Infrared light emission close to m onochromatic light : A,P = 950 nm (typ.)


    OCR Scan     		LN162S LN162S PDF

    IR Blue Light infrared

    Abstract: LN66
    Text: Panasonic Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :P0 = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		100mA IR Blue Light infrared LN66 PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN172 GaAIAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : A,P = 900 nm (typ.)


    OCR Scan     		LN172 100mA PDF

    LNA2801L

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 6 m W /sr min. • Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		LNA2801L LNA2801L PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency : Ie = 6 mW /sr min. Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		LNA2801L PDF